Method for preparing graphical GaN substrate

A patterning and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor thermal conductivity and large lattice mismatch, and achieve improved light extraction efficiency and thermal conductivity, excellent Performance, the effect of improving luminous efficiency

Active Publication Date: 2011-08-03
广东中图半导体科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, PSS substrates still have disadvantages such as poor bottom therm

Method used

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  • Method for preparing graphical GaN substrate
  • Method for preparing graphical GaN substrate
  • Method for preparing graphical GaN substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step exposure method plus dry etching technology (GaN single crystal substrate 2)

[0027] 1. Select a 2-inch GaN single crystal substrate with a thickness of 300 microns;

[0028] 2. Use a coating machine to coat a photoresist 1 with a thickness of 3 microns on the surface of the above-mentioned GaN single crystal, see attached figure 1 The second step shows the coating of 3 micron thick photoresist 1 and 300 micron thick GaN single crystal substrate 2;

[0029] 3. Expose the GaN single crystal substrate coated with 3 micron photoresist through a step exposure machine, and form a cylindrical pattern with a surface period of 3 microns after development, as shown in the attached figure 1 The third step shows a 2-inch GaN single crystal substrate with a periodic photoresist pattern after distributed exposure, and a product with a 3 micron periodic photoresist pattern and a 300 micron thick GaN single crystal substrate;

[0030] 4. Put the sample with periodic pattern ph...

Embodiment 2

[0032] Step exposure method plus dry etching technology (GaN / Al 2 o 3 composite substrate)

[0033] Select a 2-inch GaN / Al with a thickness of 10 microns GaN and 430 microns sapphire 2 o 3 composite substrate. attached image 3 2-inch GaN / Al with 10 micron GaN, 430 micron sapphire shown in the first step 2 o 3 Composite substrate, composite substrate 2 can be selected with a surface layer of 10 micron GaN and a lower layer of 430 micron sapphire; use a coating machine to coat a photoresist with a thickness of 3 microns on the surface of the above-mentioned GaN single crystal; image 3 Step 2 shows GaN / Al coated with 3 micron photoresist 2 o 3 Composite substrate;

[0034] The GaN single crystal substrate coated with 3 micron photoresist was exposed by a step exposure machine, and developed to form a cylindrical pattern with a surface period of 3 microns, attached image 3 The third step shows a 2-inch GaN single crystal substrate with a periodic photoresist pattern a...

Embodiment 3

[0037] Step exposure wet etching technology (GaN / Al 2 o 3 composite substrate)

[0038] Select a 2-inch GaN / Al with a thickness of 10 microns GaN and 430 microns sapphire 2 o 3 Composite substrate, with Figure 5 2-inch GaN / Al with 10 micron GaN, 430 micron sapphire shown in the first step 2 o 3 Composite substrate, the surface layer is 10 micron GaN, and the lower layer is 430 micron sapphire; PECVD equipment is used to grow silica (SiO2)3 with a thickness of 2 microns on the surface of the above-mentioned GaN single crystal, and attach Figure 5 The second step shows the GaN / Al growth of SiO2 with a thickness of 2 microns 2 o 3 Composite substrate, access to 2 micron silica (SiO2)3 mask, 430 micron GaN / Al 2 o 3 Composite substrate products.

[0039] Utilize photoresist 1 equally, press the step-by-step adhesive development exposure method of embodiment two, in above-mentioned growth 2 micron SiO2 GaN / Al 2 o 3 Cylindrical patterns with a period of 3 micrometers ar...

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Abstract

The invention provides a method for preparing a graph on a GaN substrate, which can greatly improve internal quantum efficiency, light emitting efficiency and heat conductivity of a light emitting diode (LED) chip. The method comprises the following steps of: generating a graph template on the surface layer of the GaN substrate by using a mask of a micro/nano graph, a lithographic technology, a nano impression technology or an aluminum oxide graph transfer technology, and then preparing a graphical structure capable of realizing stable micro and submicron scales and favorable for emitting light by using a graphical etching technology. The substrate can greatly improve the light emitting efficiency and the heat conductivity of the LED chip and has excellent performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, in particular to the preparation and application of a patterned GaN substrate (PatternedGaN Substrade, PGS). 2 o 3 , GaN / Si, GaN / SiC and other composite substrates) to prepare micro-nano patterns as growth substrates to prepare high-performance GaN-based light-emitting devices, such as light-emitting diodes (LEDs). Background technique [0002] Nitride semiconductor materials mainly composed of GaN, InN, AlN and their ternary and quaternary materials have a continuously variable energy band gap ranging from 0.7eV to 6.2eV, and all of them are direct band gaps. Its excellent physical and chemical stability, high saturation electron mobility and other characteristics make it the preferred material for GaN-based lasers, light-emitting diodes and other optoelectronic devices. [0003] However, due to the difficulty in preparing GaN single crystals and finding materials that ma...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/32H01L21/02
Inventor 张国义孙永健贾传宇陆羽刘鹏付星星杨志坚童玉珍廉宗禺
Owner 广东中图半导体科技股份有限公司
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