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Radiation-sensitive resin composition, and resist pattern formation method

一种树脂组合物、敏感性的技术，应用在感光材料加工、图纹面的照相制版工艺、用于光机械设备的光敏材料等方向，能够解决不能很好地使用等问题，达到图案形状良好、抗蚀剂基本性能优异的效果

Active Publication Date: 2013-09-04
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the compound such as PHS having an aromatic group shows a large absorption in the 193nm region at the ArF excimer laser wavelength, there is a problem that it cannot be used well in the case of using the ArF excimer laser as a light source. question

Method used

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  • Radiation-sensitive resin composition, and resist pattern formation method
  • Radiation-sensitive resin composition, and resist pattern formation method
  • Radiation-sensitive resin composition, and resist pattern formation method

Examples

Experimental program
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Effect test

Embodiment

[0382] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples. In addition, "part" and "%" in an Example and a comparative example are mass standards unless otherwise indicated.

[0383] [1] Synthesis of resins (A-1) to (A-5)

[0384] Next, synthesis examples of the respective resins (A) will be described. In addition, various measurements in the following synthesis examples were performed according to the following points.

[0385] (1) Mw, Mn and Mw / Mn

[0386] Using the GPC column (trade name "G2000HXL" 2 pieces, trade name "G3000HXL" 1 piece, product name "G4000HXL" 1 piece) manufactured by Tosoh Corporation in Japan, the flow rate is 1.0 ml / min, the stripping solvent is tetrahydrofuran, column temperature Under the analysis condition of 40°C, it was measured by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard. In addition, the degree of dispersion "M...

Synthetic example 1

[0394] Prepare to dissolve 53.93g (50 mol%) of the monomer (M-1), 35.38g (40 mol%) of the monomer (M-2) and 10.69g (10 mol%) of the monomer (M-3) Further, a monomer solution containing 5.58 g of dimethyl 2,2'-azobis(2-methylpropionate) was added to 200 g of 2-butanone. On the other hand, 100 g of 2-butanone was put into a 500 ml three-necked flask equipped with a thermometer and a dropping funnel, and nitrogen gas purging was carried out for 30 minutes. After nitrogen purging, the inside of the flask was stirred with a magnetic stirrer, and heated so as to reach 80°C. Next, using the dropping funnel, the previously prepared monomer solution was added dropwise over 3 hours. Taking the start of the dropwise addition as the start time of the polymerization, the polymerization reaction was carried out for 6 hours. After the polymerization is completed, the polymerization solution is cooled to below 30° C. by water cooling. After cooling, it was poured into 2000 g of methanol, a...

Synthetic example 2

[0399] Prepare to dissolve 47.54g (46 mol%) of the monomer (M-1), 12.53g (15 mol%) of the monomer (M-2) and 39.93g (39 mol%) of the monomer (M-4) Further, a monomer solution containing 4.08 g of 2,2'-azobis(isobutyronitrile) was added to 200 g of 2-butanone. On the other hand, 100 g of 2-butanone was put into a 1000 ml three-necked flask equipped with a thermometer and a dropping funnel, and nitrogen gas was purged for 30 minutes. After nitrogen purging, the inside of the flask was stirred with a magnetic stirrer, and heated so as to reach 80°C. Next, using the dropping funnel, the previously prepared monomer solution was added dropwise over 3 hours. Taking the start of the dropwise addition as the start time of the polymerization, the polymerization reaction was carried out for 6 hours. After the polymerization is completed, the polymerization solution is cooled to below 30° C. by water cooling. After cooling, it was poured into 2000 g of methanol, and the precipitated whi...

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Abstract

A radiation-sensitive resin composition includes (A) a resin that includes a repeating unit that becomes alkali-soluble due to an acid, but does not include a fluorine-containing repeating unit, (B) a photoacid generator, (C) a fluorine-containing resin that includes a repeating unit that becomes alkali-soluble due to an acid, and a fluorine-containing repeating unit, and (D) a lactone compound, the content of the lactone compound (D) in the composition being 31 to 200 parts by mass based on 100 parts by mass of the resin (A). A resist pattern-forming method utilizes the radiation-sensitive resin composition. The radiation-sensitive resin composition produces an excellent pattern shape, exhibits excellent basic resist performance (e.g., sensitivity, resolution, LWR, development defect resistance, and pattern collapse resistance), and produces a resist film having a sufficiently water-repellent surface that suppresses watermark defects and bubble defects during liquid immersion lithography.

Description

technical field [0001] The present invention relates to a radiation-sensitive resin composition and a method for forming a resist pattern used in semiconductor manufacturing processes such as ICs, in the manufacture of circuit boards such as liquid crystals and thermal heads, and in other photolithography processes. More specifically, the present invention relates to a radiation-sensitive resin composition and a resist pattern suitable for use in a photolithography process using an exposure light source such as an extreme ultraviolet light with a wavelength of 220 nm or less, such as an ArF excimer laser or an electron beam, as a light source. form method. Background technique [0002] The chemically amplified radiation-sensitive resin composition is a composition in which acid is generated in the exposed portion by irradiating radiation such as deep ultraviolet light represented by KrF excimer laser or ArF excimer laser, and the acid is used as The reaction of the catalyst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039G03F7/004G03F7/38H01L21/027
CPCG03F7/2041G03F7/0397G03F7/0046G03F7/004G03F7/0045H01L21/027H01L21/0271
Inventor 西村幸生松田恭彦中川大树藤泽友久滨友香里笠原一树
Owner JSR CORPORATIOON
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