Separation method of LED (light emitting diode) epitaxy chip

Abstract

The invention discloses a separation method of an LED (light emitting diode) epitaxy chip, and the method comprises the following steps: forming a groove on the back of a hard substrate on which an LED epitaxy structure is reserved or grown in a photoetching manner, wherein the groove corresponds to a predetermined partition position between chip figures predetermined or formed at the frontage ofthe substrate; forming an epitaxy wafer on the epitaxy structure grown on the frontage of the substrate, and then partitioning the epitaxy wafer along the groove to form single LED epitaxy chips, or directly partitioning the epitaxy wafer along the groove to form single LED epitaxy chips, wherein the lateral dimension of each LED epitaxy chip is two or more than two times of the thickness of eachLED epitaxy chip, and the depth of the groove is more than one tenth of the thickness of each chip. By using the separation method of the LED epitaxy chip, the LED epitaxy chip is effectively simplified, especially the separation operation of a high-power LED epitaxy chip is simplified, the work efficiency and the yield of the LED chips are improved, and the production cost is reduced; and especially the LED chip based on a transparent substrate can be provided with a thicker transparent substrate utilized as a light-emitting window with high light-emitting efficiency, thus the method provided by the invention is especially suitable for the application of flip LED chip.

Description

technical field

[0001] The invention relates to a method for preparing a semiconductor chip, in particular to a method for separating LED epitaxial chips based on a hard substrate. Background technique

[0002] The new generation of semiconductor materials represented by GaN has great application potential in the fields of solid-state lighting, solid-state lasers, optical information storage, and ultraviolet detectors.

[0003] At present, common GaN-based light-emitting elements mainly use wafers formed of materials such as sapphire and silicon carbide as substrates. The manufacturing process includes: growing on the substrate to form an epitaxial structure, and then cutting the substrate into individual LED chips.

[0004] The traditional cutting method is to use a diamond knife as a cutting tool to cut the surface of the substrate first, and then perform the fracture process. However, substrates such as sapphire and silicon carbide have great hardness and strength, so cu...

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