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Method for preparing zinc oxide nano-array on flexible substrate at low temperature

A zinc oxide nanometer and flexible substrate technology is applied in the field of preparation of nanomaterial arrays, which can solve the problems of maintaining a stable state and being unable to meet the requirements, and achieves the effects of low cost, simple and easy conditions, and simple process.

Inactive Publication Date: 2011-09-14
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the preparation process is simple and the cost is low, it cannot meet the current needs of ZnO nanoarrays, especially most flexible substrates of organic polymers cannot maintain a stable state at 200-300 °C.

Method used

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  • Method for preparing zinc oxide nano-array on flexible substrate at low temperature
  • Method for preparing zinc oxide nano-array on flexible substrate at low temperature
  • Method for preparing zinc oxide nano-array on flexible substrate at low temperature

Examples

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Effect test

example 1

[0026] 1. Dissolve chemically pure sodium hydroxide and zinc acetate in ethanol respectively to form ethanol solution with a concentration of 1mol / L sodium hydroxide and ethanol solution with a concentration of 0.1mol / L zinc acetate, wherein the zinc acetate solution is configured The temperature is 60°C;

[0027] 2. Use ordinary filter paper as the substrate, ultrasonically clean in deionized water and ethanol for 10 minutes each, and dry at 60°C for later use;

[0028] 3. Soak the substrate cleaned in step 2 in the zinc acetate ethanol solution prepared in step 1. After fully soaking evenly, lift the liquid surface slowly and at a uniform speed, and place it in an oven at 100°C for drying;

[0029] 4. Soak the substrate treated in step 3 into the sodium hydroxide ethanol solution prepared in step 1. After fully soaking evenly, lift the liquid surface slowly and at a uniform speed, and place it in an oven at 100°C for drying;

[0030] 5. Repeat step 3 and step 4 for 10 times...

example 2

[0034] 1. Dissolve chemically pure zinc acetate and sodium hydroxide in ethanol respectively to make a concentration of 0.5mol / L sodium hydroxide ethanol solution and a concentration of 0.1mol / L zinc acetate ethanol solution, wherein the zinc acetate The ethanol solution configuration temperature is 60°C;

[0035] 2. Dissolve equimolar amounts of zinc nitrate and hexamethylenetetramine in deionized water respectively to form a mixed solution with a molar concentration of 0.05mol / L, and use it as a reaction precursor;

[0036] 3. Use ordinary filter paper as the substrate, ultrasonically wash in deionized water and ethanol for 10 minutes each, and finally dry at 60°C for later use;

[0037] 4. Soak the substrate cleaned in step 3 into the zinc acetate ethanol solution prepared in step 1. After fully soaking evenly, lift the liquid surface slowly and at a uniform speed, and dry it in an oven at 60°C;

[0038] 5. Soak the substrate treated in step 4 into the sodium hydroxide eth...

example 3

[0045] 1. Dissolve chemically pure zinc acetate and sodium hydroxide in ethanol and mix them evenly to form an ethanol solution of zinc acetate with a concentration of 0.1mol / L and an ethanol solution with a concentration of 0.5mol / L sodium hydroxide;

[0046] 2. Mix equimolar amounts of zinc nitrate and hexamethylenetetramine in deionized water respectively to form a solution with a molar concentration of 0.05mol / L. The two solutions are configured as a reaction precursor according to 1:1;

[0047] 3. Use polyimide (PI) film as the substrate, ultrasonically wash in deionized water, acetone, ethanol, and isopropanol for 10 minutes each, and dry at 60°C for later use;

[0048] 4. Evenly add a small amount of zinc acetate ethanol solution prepared in step 1 to the surface of the substrate cleaned in step 3, and dry in an oven at 60°C;

[0049] 5. Evenly add a small amount of sodium hydroxide ethanol solution prepared in step 1 to the surface of the substrate treated in step 4, ...

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Abstract

The invention belongs to the technical field of preparation of nano-material arrays and provides a method for preparing a zinc oxide nano-array at low temperature. In the method, a zinc oxide crystal seed layer is prepared on the surface of a substrate through low-temperature chemical reaction, and then, the zinc oxide nano-array is synthesized through low-temperature hydrothermal reaction. The method comprises the following steps of: taking an ethanol solution of zinc acetate and an ethanol solution of sodium hydroxide as raw materials for preparing the zinc oxide crystal seed layer; soaking the cleaned substrate in the two solutions alternately, baking for many times, then uniformly dropping a small amount of deionized water, and baking to prepare the zinc oxide crystal seed layer on the substrate; putting the substrate of the prepared crystal seed layer into the mixed aqueous solution of zinc nitrate and hexamethylene tetramine, and insulating for a period of time; and taking out the substrate, cleaning, and then drying to obtain a nano-zinc oxide array. The method provided by the invention realizes the purpose of preparing zinc oxide nano-arrays in a large area at low temperature (lower than 100 DEG C), and has the advantages of simple process and low cost.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanomaterial arrays, and provides a method for preparing zinc oxide nanoarrays under low temperature conditions, that is, preparing a zinc oxide seed layer on the surface of a substrate through a low temperature chemical reaction, and then synthesizing zinc oxide through a low temperature hydrothermal reaction nanoarray. Background technique [0002] ZnO is a typical direct bandgap wide bandgap semiconductor material. The bandgap width at room temperature is 3.37eV, similar to GaN, and the exciton binding energy is as high as 60meV, much larger than ZnSe (22meV) and GaN (25meV). At the same time, ZnO has It has special electrical and thermal conductivity, very stable chemical properties, and rich sources of materials. It is a third-generation semiconductor material with great application potential. In recent years, with the improvement of material growth process and the in-depth and develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B29/62C30B7/10C01G9/02
Inventor 张跃张铮廖庆亮秦子李萍黄运华
Owner UNIV OF SCI & TECH BEIJING
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