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Ethylene-vinyl acetate adhesive film containing quantum dots as well as preparation method and application thereof

A vinyl acetate film, vinyl acetate technology, used in adhesives, film/sheet adhesives, non-polymer adhesive additives, etc., can solve the problem of reducing the photoelectric conversion efficiency of solar cells and EVA film penetration problems such as the decrease of light rate, to achieve the effect of strong operability, easy industrial production, and improved efficiency

Active Publication Date: 2013-03-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Once the EVA film turns yellow, the light transmittance of the EVA film decreases, thereby reducing the photoelectric conversion efficiency of the solar cell

Method used

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  • Ethylene-vinyl acetate adhesive film containing quantum dots as well as preparation method and application thereof
  • Ethylene-vinyl acetate adhesive film containing quantum dots as well as preparation method and application thereof
  • Ethylene-vinyl acetate adhesive film containing quantum dots as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 10 mg of silicon quantum dots with an average size of 3 nanometers whose surface was passivated by hydrogen were prepared by plasma method. The standard deviation of the size distribution of silicon quantum dots is 10% of the mean size. Place silicon quantum dots in a mixed solution of 12 milliliters of n-heptane and dodecene (the volume ratio of the two is 5:1), heat to 80 ° C, and carry out hydrosilylation reaction under an argon atmosphere until the solution becomes It is clear, and the silicon quantum dots with carbon chains on the surface are obtained. The solution was volatilized to remove unreacted dodecene, and then the surface-modified silicon quantum dots were dissolved in 10 ml of n-heptane to obtain silicon quantum dot inks. The silicon quantum dots in the silicon quantum dot ink are excited by light with a wavelength of 325 nanometers, and the fluorescence emitted is mainly concentrated at a wavelength of 600±20 nanometers, and the fluorescence quantum eff...

Embodiment 2

[0039] 1 gram of silicon quantum dots with an average size of 3.5 nanometers whose surface is hydrogen passivated was prepared by plasma method. The standard deviation of the size distribution of silicon quantum dots is 15% of the mean size. Put the silicon quantum dots in a mixed solution of 12 milliliters of n-heptane and octadecene (the volume ratio of the two is 5:1), heat to 80 ° C, and carry out hydrosilylation reaction under an argon atmosphere until the solution becomes It is clear, and the silicon quantum dots with carbon chains on the surface are obtained. The solution was volatilized to remove unreacted octadecene, and then the surface-modified silicon quantum dots were dissolved in 12 milliliters of n-heptane to obtain silicon quantum dot inks. The silicon quantum dots in the silicon quantum dot ink are excited by light with a wavelength of 325 nanometers, and the fluorescence emitted is mainly concentrated at a wavelength of 680±20 nanometers, and the fluorescenc...

Embodiment 3

[0041]10 grams of silicon quantum dots with an average size of 4 nanometers whose surface was hydrogen passivated were prepared by plasma method. The standard deviation of the size distribution of silicon quantum dots is 15% of the mean size. Put the silicon quantum dots in a mixed solution of 12 ml of n-heptane and styrene (the volume ratio of the two is 5:1), heat to 80 ° C, and carry out hydrosilylation reaction under an argon atmosphere until the solution becomes It is clear, and silicon quantum dots with benzene rings attached to the surface are obtained. The solution was volatilized to remove unreacted styrene, and then the surface-modified silicon quantum dots were dissolved in 10 ml of n-heptane to obtain silicon quantum dot inks. The silicon quantum dots in the silicon quantum dot ink are excited by light with a wavelength of 325 nanometers, and the fluorescence emitted is mainly concentrated at a wavelength of 720±20 nanometers, and the fluorescence quantum efficien...

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Abstract

The invention discloses a preparation method of an ethylene-vinyl acetate adhesive film containing quantum dots, which comprises the following steps: using a modifier to perform hydrophilic or lipophilic modification on the surfaces of the semiconductor quantum dots, further uniformly dispersing the semiconductor quantum dots after modification into a solvent for forming semiconductor quantum dotink, then mixing the semiconductor quantum dot ink, an ethylene-vinyl acetate copolymer and an assistant, and performing hot compression molding or extrusion molding for getting the ethylene-vinyl acetate adhesive film containing the semiconductor quantum dots. The preparation method is simple, good in controllability, strong in operability and easy for industrial production. The invention further discloses the ethylene-vinyl acetate adhesive film containing the quantum dots, which is applied in solar cells and can effectively improve the utilization efficiency of the solar cells.

Description

technical field [0001] The invention relates to the field of composite functional materials, in particular to an ethylene-vinyl acetate copolymer (EVA) adhesive film containing semiconductor quantum dots and a preparation method and application thereof. Background technique [0002] EVA is a random copolymer with a high degree of branching, which is composed of non-polar ethylene monomer and highly polar vinyl acetate (VA) monomer. Its structure is as follows: [0003] [0004] Compared with polyethylene, due to the influence of strong polar vinyl acetate, its crystallinity is reduced, its polarity is increased, and its flexibility, stress fracture, flex cracking resistance, low temperature flexibility and impact strength are improved. Increased, while impact strength, hardness, grease resistance, melting point, heat sealing temperature and dielectric properties decreased. In addition, with the different proportions of vinyl acetate monomers in EVA, the physical, chemica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/048C09J7/00C09J123/08C09J11/04H01L31/055
CPCY02E10/52
Inventor 皮孝东王蓉刘耀华杨德仁
Owner ZHEJIANG UNIV
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