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Silicon nanometer wire-conductive polymer compound as well as preparation method and application thereof

A technology of conductive polymers and silicon nanowires, which is applied in the direction of silicon compounds, chemical instruments and methods, electrolysis processes, etc., can solve problems such as side reactions, increased molecular impedance, and difficult control of modification reactions, and achieve mild reaction conditions. The effect of high catalytic performance

Inactive Publication Date: 2011-11-23
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still some problems in these methods, such as the degree of modification reaction is not easy to control, unavoidable side reactions will be introduced during the modification process, and the electron transport rate of the device will be reduced due to the increase of the modified molecular impedance.

Method used

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  • Silicon nanometer wire-conductive polymer compound as well as preparation method and application thereof
  • Silicon nanometer wire-conductive polymer compound as well as preparation method and application thereof
  • Silicon nanometer wire-conductive polymer compound as well as preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Example 1. Preparation of silicon nanowire-PEDOT composite and its iodine-doped composite

[0034] In situ polymerization of conductive polymer PEDOT on the surface of silicon nanowire array structure.

[0035]The reaction raw material is 3,4-ethylenedioxythiophene (EDOT, 3,4-ethylenedioxythiophene), and the reaction equation is as follows:

[0036]

[0037] The specific synthesis method is as follows:

[0038] Weigh 0.1173g of EDOT (0.0075M), LiClO 4 11.3g (1.0M), dissolved in 110ml of deionized water, ultrasonicated for 15 minutes to disperse EDOT, and argon gas was used for 30 minutes to remove oxygen in the solution. A three-electrode system was used. The working electrode was a silicon wafer with a silicon wire array after etching. , the counter electrode is Pt sheet (2x2cm 2 ), and the reference electrode was a saturated calomel electrode (SCE). Cyclic voltammetry was used during polymerization, the scanning potential range was: -1.0-1.2 V, and the scannin...

Embodiment 2

[0046] Example 2. Preparation of silicon nanowire-PEDOT composite and its iodine-doped composite

[0047] The composite of silicon nanowire-PEDOT was prepared according to the method in Example 1, except that the scanning rate during polymerization in this example was 0.3 v / s.

[0048] Doping the prepared silicon nanowire-PEDOT composite with iodine elemental substance and depositing co-catalyst titanium bronze on the surface of the iodine-doped PEDOT film are the same as those in Example 1.

[0049] The electrochemical performance test of photocatalytic hydrogen production was carried out on the sample silicon nanowire-iodine-doped PEDOT-CuPc. The test method is the same as Example 1, and the results are shown in Figure 5 .

Embodiment 3

[0051] Example 3. Preparation of silicon nanowire-PEDOT composite and its iodine-doped composite

[0052] The composite of silicon nanowire-PEDOT was prepared according to the method in Example 1, except that the scanning rate during polymerization was 0.4 v / s in this example.

[0053] Doping the prepared silicon nanowire-PEDOT composite with iodine elemental substance and depositing co-catalyst titanium bronze on the surface of the iodine-doped PEDOT film are the same as those in Example 1.

[0054] The electrochemical performance test of photocatalytic hydrogen production was carried out on the sample silicon nanowire-iodine-doped PEDOT-CuPc. The test method is the same as Example 1, and the results are shown in Image 6 .

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Abstract

The invention discloses a silicon nanometer wire-conductive polymer PEDOT (polyethylenedioxythiophene) compound as well as a preparation method and an application thereof. The preparation method comprises the following steps: 1) using an HF (Hydrogen Fluoride) solution to treat the surface of a silicon nanometer wire array structure which is acquired by using a metal nanometer particle catalyzing auxiliary etching method, thereby acquiring a treated silicon nanometer wire array structure; and 2) using a cyclic voltammetry to enable a polymer monomer EDOT (ethylenedioxythiophene) to have electrochemical polymerization on the surface of the treated silicon nanometer wire array structure, thereby acquiring a silicon nanometer wire-conductive polymer compound. The preparation method has a mild reaction condition, is easily operated and can be used for efficiently controlling the thickness of functional polymers on the silicon nanometer wire surface, the band structure and the conductivity. The preparation method is an effective method for constructing a compound structure of the silicon nanometer wire-conductive polymer functional compound. The application of the acquired compound structure in the field of photocatalytic hydrogen production is researched and a result shows that the compound structure has high catalytic property.

Description

technical field [0001] The invention relates to a silicon nanowire-conductive polymer composite and a preparation method and application thereof. Background technique [0002] Silicon is the basic material of the modern information technology industry, and silicon nanowires are considered to be an important building block for future silicon-based nanodevices. [0003] For silicon nanomaterials, based on its particularity in device applications, it is necessary to study the effect of chemical modification on the performance of silicon nanomaterial-based devices. As device size shrinks further, the effects caused by surface state changes will become more critical. For nanodevices, this surface state often plays a decisive role in the performance of the device. The limitations of the silicon material itself, such as poor chemical stability and easy aggregation, further enhance the necessity of chemical modification. In sensing and electrical applications, the surface effect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021C25B3/00
Inventor 张晓宏杨添王辉欧雪梅李述汤
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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