Silicon nanometer wire-conductive polymer compound as well as preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
- Publication Date
- 2011-11-23
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a silicon nanowire-conductive polymer composite and a preparation method and application thereof. Background technique
[0002] Silicon is the basic material of the modern information technology industry, and silicon nanowires are considered to be an important building block for future silicon-based nanodevices.
[0003] For silicon nanomaterials, based on its particularity in device applications, it is necessary to study the effect of chemical modification on the performance of silicon nanomaterial-based devices. As device size shrinks further, the effects caused by surface state changes will become more critical. For nanodevices, this surface state often plays a decisive role in the performance of the device. The limitations of the silicon material itself, such as poor chemical stability and easy aggregation, further enhance the necessity of chemical modification. In sensing and electrical applications, the surface effect ...