Silicon quantum dot solar cell based on heterojunction structure and preparation method thereof

A technology of solar cells and silicon quantum dots, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of different sub-cell currents and lattice constants, shortage of material sources, environmental pollution, etc., to achieve large quantum yield, Enriching the effect of non-toxic, high transformation efficiency

Inactive Publication Date: 2011-12-14
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current main method to solve this problem is to make tandem solar cells with different bandgap structures, but this requires the use of different raw materials and the

Method used

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  • Silicon quantum dot solar cell based on heterojunction structure and preparation method thereof
  • Silicon quantum dot solar cell based on heterojunction structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] (1) cleaning the P-type monocrystalline silicon substrate;

[0033] (2) A pyramid textured structure is prepared on a P-type monocrystalline silicon substrate, and the chemical solvent used for the texture is a prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are: 0.35ml and 1.86ml respectively. The P-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 75°C for 45 minutes to form a pyramid with an average height of 10-15um, and obtain the P-type monocrystalline silicon substrate 2;

[0034] (3) implement NH to the monocrystalline silicon substrate 2 that makes pyramid suede finish 3 Plasma treatment for 8 minutes, in which NH 3 The flow rate is 45sccm, the RF power is 40W, the substrate temperature is 200°C, and the pressure is 60Pa;

[0035] (4) A non-stoichiometric s...

Embodiment 2

[0042] (1) cleaning the P-type monocrystalline silicon substrate;

[0043] (2) A pyramid textured structure is prepared on a P-type monocrystalline silicon substrate, and the chemical solvent used for the texture is a prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are: 0.37ml and 1.75ml respectively. The P-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 80°C for 50 minutes, and the average height of the pyramids formed is between 10-17um, and the P-type monocrystalline silicon substrate 2 is obtained;

[0044] (3) implement NH to the monocrystalline silicon substrate 2 that makes pyramid suede finish 3 Plasma treatment for 9 minutes, in which NH 3 The flow rate is 55sccm, the RF power is 60W, the substrate temperature is 220°C, and the pressure is 60Pa;

[0045] (4) A n...

Embodiment 3

[0052] (1) cleaning the P-type monocrystalline silicon substrate;

[0053] (2) A pyramid textured structure is prepared on a P-type monocrystalline silicon substrate, and the chemical solvent used for the texture is a prepared solution of potassium hydroxide, deionized water and isopropanol. Wherein, the volumes of deionized water and isopropanol required per gram of potassium hydroxide are respectively: 0.38ml and 1.67ml. The P-type monocrystalline silicon substrate is placed in the prepared chemical solvent and kept in a constant temperature water bath at 85°C for 55 minutes to form a pyramid with an average height of 10-20um, and obtain the P-type monocrystalline silicon substrate 2;

[0054] (3) implement NH to the monocrystalline silicon substrate 2 that makes pyramid suede finish 3 Plasma treatment for 10 minutes, in which NH 3 The flow rate is 65sccm, the RF power is 40W, the substrate temperature is 220°C, and the pressure is 70Pa;

[0055] (4) A non-stoichiometric ...

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Abstract

The invention discloses a silicon quantum dot solar energy cell based on a heterojunction structure and a preparation method thereof. The solar energy cell comprises a silver aluminium composite back electrode, a P-type monocrystalline silicon substrate, a silicon nitride thin layer, an N-type amorphous silicon layer, a transparent conductive film and a silver electrode from the bottom up. The silicon nitride thin layer contains silicon quantum dots with a diameter of 1-6 nm. The transparent conductive film is an Al-doped ZnO transparent conductive film with a thickness of 200-300 nm. The P-type monocrystalline silicon substrate for texturing is provided with the silicon nitride layer containing the silicon quantum dots, deposited with the N-type amorphous silicon layer, then deposited with the Al-doped ZnO transparent conductive film, finally both sides of the above resultant are added with the silver electrode and an Al-back surface field respectively. The cell has the advantages ofsimple structure, wide spectrum response range, high open-circuit voltage and large photoproduction current, and a preparation step of the cell is compatible with a present technique. The invention provides a good solution method for increasing present silicon-based solar energy cell conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of silicon-based solar cells, in particular to a novel silicon quantum dot heterojunction solar cell and a preparation method thereof, and belongs to the technical field of solar cells and nanomaterial applications. technical background [0002] Fossil energy is currently the main body of the world's energy supply. According to the analysis of the world's energy authorities, conventional energy sources such as coal, oil, natural gas, and uranium will be exhausted by the end of this century. In addition to the shortage of raw material supply, the exploitation and use of fossil energy also cause global ecological environment pollution. Therefore, searching for a clean, pollution-free and abundant new energy source is crucial to the sustainable development of human civilization and the world economy in the future. This has become one of the issues of common concern and must be addressed by all countries in the ...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/075H01L31/18
CPCY02E10/50Y02E10/547Y02E10/548Y02P70/50
Inventor 曾祥斌姜礼华张笑文国知
Owner HUAZHONG UNIV OF SCI & TECH
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