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Patterning method for material

A patterning and target material technology, applied in the field of patterning materials by inkjet printing method, can solve the problems that have not been reported, mask patterning, difficult to realize, etc.

Active Publication Date: 2013-06-19
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The lift-off technique is widely used in lithography, however, in inkjet printing, it has not been reported
Due to the relatively large particle size of graphene, direct printing is difficult to achieve
If the graphene electrode is prepared by the lift-off process, it involves the patterning of the mask layer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1, preparing graphene electrodes on a silicon dioxide substrate and demonstrating its application in organic field effect transistors.

[0024] 1) Clean the silica substrate:

[0025] Silicon wafers with a thickness of 300 nanometers of silicon dioxide on the surface were ultrasonically cleaned with detergent, water, deionized water, acetone and ethanol for 5 minutes each, and then dried;

[0026] 2) Place the silicon wafer that has been processed in step 1) on the rotor of a desktop homogenizer, and add dropwise a drop of N,N-dimethylformamide with a weight-average molecular weight of 200,000 and a concentration of 1.5 mg / mL of polyacrylonitrile. solution, adjust the speed of the homogenizer at 3500 rpm, and form a uniform polyacrylonitrile polymer film on the silicon wafer with a thickness of 2 nanometers;

[0027] 3) Inkjet printing patterned polyacrylonitrile mask layer:

[0028] Place the silicon wafer prepared in step 2) with a mask layer on its surface ...

Embodiment 2

[0043] Example 2. Chromium is patterned on a silicon dioxide substrate using inkjet printing and lift-off process

[0044] 1) Clean the silica substrate:

[0045] Silicon wafers with a thickness of 300 nanometers of silicon dioxide on the surface were ultrasonically cleaned with detergent, water, deionized water, acetone and ethanol for 5 minutes each, and then dried;

[0046] 2) Place the silicon wafer that has been processed in step 1) on the rotor of a desktop homogenizer, and add dropwise a drop of N,N-dimethylformamide with a weight-average molecular weight of 200,000 and a concentration of 1.5 mg / mL of polyacrylonitrile. solution, adjust the speed of the homogenizer at 3500 rpm, and form a uniform polyacrylonitrile polymer film on the silicon wafer with a thickness of 1 nanometer;

[0047] 3) Inkjet printing patterned polyacrylonitrile mask layer:

[0048] Place the silicon wafer with polyacrylonitrile polymer film on the surface obtained in step 2) on the console of a...

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Abstract

The invention discloses a patterning method for a material. The method comprises the following steps of: 1) preparing a layer of macromolecular film on a substrate; 2) coating a good solvent for the macromolecular film on the surface of the obtained macromolecular film by using an ink jet printing method, and obtaining a patterned macromolecular film; and 3) sequentially preparing a layer of target material film and a layer of polystyrene film on the patterned macromolecular film and the surface of the exposed substrate, soaking in water, peeling the polystyrene film, all the target material film except patterns and the macromolecular film, and thus completing patterning of the material. The shortest channel length of a graphene electrode can reach 2 microns, the graphene electrode obtained on the silicon dioxide substrate can be directly applied to an organic field effect transistor and used as an effective current carrier injection electrode, and other transfer or post treatment means is not needed.

Description

technical field [0001] The invention relates to a method for patterning materials, in particular to a method for patterning materials by using an inkjet printing method. Background technique [0002] Chemically reduced graphene is considered to be an excellent conductive material because of its good mechanical properties and high electrical conductivity. It can replace the widely used indium tin oxide (ITO) in large-area, transparent, and flexible applications. In addition, because the energy level arrangement of graphene materials can match with many organic semiconductor materials, it is expected to be used as an excellent electrode injection material for many organic electronic devices. In fact, since the discovery of graphene, people have demonstrated its good technical prospects in many organic electronic devices (J.Wu, H.A.Becerril, Z.Bao, Z.Liu, Y.Chen, P.Peumans, Appl .Phys.Lett.2008, 92, 263302; G.Eda, Y.-Y.Lin, C. Mattevi, H.Yamaguchi, H.-A.Chen, I.S.Chen, C.-W.Ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/00C04B41/45
Inventor 刘云圻张磊刘洪涛赵岩孙向南温雨耕郭云龙高希珂狄重安于贵
Owner INST OF CHEM CHINESE ACAD OF SCI
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