Method for preparing cuprous oxide-indium trioxide solid solution superfine powder

A technology of indium trioxide and cuprous oxide is applied in the field of powder metallurgy, which can solve the problems of easy agglomeration of powder and high difficulty of compound, and achieve the effects of good dispersibility, good product quality and high product purity.

Inactive Publication Date: 2012-05-02
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is widely used because of its simple process, short production cycle, convenient operation, low equipment requirements, low investment, low production cost, and suitable for large-scale production. However, the prepared precursors CuO and In(OH) 3 When the mixed powder is calcined, it is necessary to make Cu +2 into Cu +1 The difficulty of the compound is very high, and the powder is easy to agglomerate (that is, the ultrafine powder re-agglomerates into larger particles)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024]A. Take metal indium with a purity of 99.99% and add it to sulfuric acid with a mass percentage concentration of 98%, then raise the temperature to 65°C, and continue stirring until the metal indium is completely dissolved, then cool to room temperature and add ultrapure water to obtain a concentration of 100g / L indium sulfate solution;

[0025] B. Take copper sulfate and add it into ultrapure water, and continue to stir until the copper sulfate is completely dissolved to prepare a copper sulfate solution with a concentration of 100-200g / L;

[0026] C. After mixing the indium sulfate solution obtained in step A and the analytically pure copper sulfate solution obtained in step B, let it stand for 3 minutes, then place it in an ultrasonic constant temperature water bath at 40°C for stirring, and at the same time add 200 g / L at a speed of 5 mL / min. sodium hydroxide solution until the pH is 10, and then according to the molar ratio of the mixed solution to the glucose so...

Embodiment 2

[0029] A. Take metal indium with a purity of 99.93% and add it to sulfuric acid with a mass percent concentration of 98%, then raise the temperature to 80°C, and continue to stir until the metal indium is completely dissolved, then cool to room temperature and add ultrapure water to obtain a concentration of 150g / L indium sulfate solution;

[0030] B. Get copper sulfate and join in ultrapure water, and continue to stir until copper sulfate dissolves completely, and the obtained concentration is the copper sulfate solution of 150g / L;

[0031] C. After mixing the indium sulfate solution obtained in step A with the analytically pure copper sulfate solution obtained in step B, let it stand for 4 minutes, then place it in an ultrasonic constant temperature water bath at 60°C for stirring, and at the same time add 150g / L at a speed of 8mL / min sodium hydroxide solution to a pH of 9.5, and then according to the molar ratio of the mixed solution to the glucose solution of 2:1.2, add...

Embodiment 3

[0034] A. Take metal indium with a purity of 99.9% and add it to sulfuric acid with a mass percentage concentration of 98%, then raise the temperature to 60°C, and continue to stir until the metal indium is completely dissolved, then cool to room temperature and add ultrapure water to obtain a concentration of 200g / L indium sulfate solution;

[0035] B. Get copper sulfate and add it into ultrapure water, and continue to stir until copper sulfate is completely dissolved to obtain a copper sulfate solution with a concentration of 200g / L;

[0036] C. After mixing the indium sulfate solution obtained in step A with the analytically pure copper sulfate solution obtained in step B, let it stand for 5 minutes, then place it in an ultrasonic constant temperature water bath at 30°C for stirring, and at the same time add 250g / L at a speed of 10mL / min. sodium hydroxide solution to a pH of 11.5, and then according to the molar ratio of the mixed solution to the glucose solution of 2:1....

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Abstract

The invention relates to a method for preparing cuprous oxide-indium trioxide solid solution superfine powder. The method comprises the following steps of: performing ultrasonic chemical reduction coprecipitation reaction on 9.99 to 99.99 percent of metal indium (In), copper sulfate (CuSO4.5H2O) and concentrated sulfuric acid (H2SO4) which serve as raw materials by using a sodium hydroxide (NaOH) solution as a precipitating agent, a glucose (C6H12O12) solution as a reducing agent and absolute ethanol (CH3CH2OH) as a stabilizing agent and a dispersing agent; reducing and aging at constant temperature; performing centrifugal separation; washing, and dispersing; and drying, calcining, and thus obtaining the cuprous oxide-indium trioxide solid solution superfine powder. The obtained cuprous oxide-indium trioxide solid solution superfine powder has the particle size of 30 to 50nm, has spherical particles, high purity and a high dispersing property and is distributed uniformly; and the method is simple, has a short production period and is convenient to operate.

Description

technical field [0001] The invention relates to a preparation method of cuprous oxide-diindium trioxide solid solution ultrafine powder, belonging to the technical field of powder metallurgy. Background technique [0002] copper indium oxide (copper Indium oxide, CuInO 2 CIO for short) belongs to the chalcopyrite structure p-type transparent conductive material. The transparent conductive material prepared by CIO has a visible light transmittance of over 80% and a band gap of 3.9eV. CIO doped with Ca 2+ or Sn 4+ Afterwards, it can be made into components with excellent photoelectric characteristics such as p-type or n-type conductivity and Seebeck coefficient, p-n homojunction with very appreciable conductivity and Seebeck coefficient. CIO can be used as electrophotographic recording, fixed display, optical memory, terminal display equipment, anti-static (static shielding), photoelectric conversion device, heat reflection, large-area heating element, aerospace, photoelec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/02C01G15/00
Inventor 姚云宋宁俞小花谢刚杨妮
Owner KUNMING UNIV OF SCI & TECH
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