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Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer

A technology of solar cells and window layers, applied in electrical components, coatings, circuits, etc., can solve problems such as unstable performance, and achieve the effects of good crystal quality, dense film, and high nucleation density

Inactive Publication Date: 2012-05-16
SHANGHAI UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

The resistivity of intrinsic ZnO films is higher than 10 6 Ω cm, by changing the growth, doping or annealing conditions, a degenerate semiconductor can be formed, the conductivity is greatly improved, and the resistivity can be reduced to 10 –4 Ω·cm order of magnitude, but its performance becomes unstable when the temperature exceeds 150°C

Method used

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  • Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer
  • Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer
  • Preparation method of ZnO/SnS solar cell element containing ZnO:Al window layer

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Embodiment

[0021] Embodiment: In this embodiment, the following processes and steps are included:

[0022] 1. Cleaning of the glass substrate coated with ITO film: Soak the glass substrate substrate in a beaker filled with an appropriate amount of acetone, and put it into an ultrasonic generator for ultrasonic treatment for about 15 minutes. Pour out the acetone, add an appropriate amount of alcohol, and continue to sonicate in the ultrasonic generator for 15 minutes. Pour out the alcohol, add an appropriate amount of distilled water, and put it into an ultrasonic generator for cleaning, usually for 15 minutes. The purpose is to remove the alcohol on the glass surface. Put the cleaned glass substrate into an electric heating constant temperature blast drying oven and dry it for use.

[0023] 2. Use RF magnetron sputtering device to sputter ZnO:Al target material: ZnO:Al raw material is obtained from outsourcing; JC500-3 / D magnetron sputtering coating machine is used, which consists of h...

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Abstract

The invention relates to a preparation method of a ZnO / SnS solar cell element containing a ZnO:Al window layer, belonging to the technical field of the manufacturing process of solar cell elements. The solar cell element is of a multilayer structure, and comprises a glass substrate base material coated with an ITO (Indium-Tin Oxide) film, a ZnO:Al film window layer, a ZnO layer as an N layer, an SnS as a P layer and an Al membrane electrode at the uppermost layer. The main layer is the window layer ZnO:Al; the ZnO:Al film is prepared by using the traditional general JC500-3 / D type radio frequency magnetron sputtering device. The processing condition of the sputtering is as follows: the sputtering power is 100W-200W, the working vacuum air pressure is 0.3 Pa-0.9 Pa, the temperature is a room temperature, the sputtering time is 40-120 minutes, and the target-substrate distance is 8cm. The film has relatively good transparent electrical conductibility and infrared reflection power.

Description

technical field [0001] The invention relates to a preparation method of a ZnO / SnS solar cell element containing a ZnO:Al window layer, belonging to the technical field of solar cell element manufacturing technology. Background technique [0002] ZnO:Al film is obtained by doping a proper amount of Al element in ZnO-based film, and has a hexagonal wurtzite structure. ZnO thin film is a wide bandgap semiconductor with lattice constant a=0.325nm, c=0.521nm, band gap of about 3.3eV, and light transmittance as high as 90% in the visible range. The resistivity of intrinsic ZnO films is higher than 10 6 Ω cm, by changing the growth, doping or annealing conditions, a degenerate semiconductor can be formed, the conductivity is greatly improved, and the resistivity can be reduced to 10 –4 Ω·cm order of magnitude, but its performance becomes unstable when the temperature exceeds 150°C. After doping impurities such as B, F or Al, the thermal stability temperature can be increased to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 史伟民武文军周杰黄璐淤凡枫马磊聂磊
Owner SHANGHAI UNIV
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