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Process for growth of ZnO nano-wire array on flexible substrate by using solution method

A nanowire array and flexible substrate technology, which is applied in the field of solution growth of ZnO nanowire arrays on flexible substrates, can solve the problems of expensive process conditions, unsuitable for low-cost preparation of ZnO nanowire arrays, and achieves growth orientation. Good, low cost, easy to operate effect

Inactive Publication Date: 2012-06-13
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the process of growing nanowires by hydrothermal reaction is simple and feasible in this method, it needs to use PLD technology to prepare ZnO seed crystals on flexible substrates.
This requires expensive equipment and harsh process conditions, and is also not suitable for the low-cost preparation of ZnO nanowire arrays.

Method used

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  • Process for growth of ZnO nano-wire array on flexible substrate by using solution method
  • Process for growth of ZnO nano-wire array on flexible substrate by using solution method

Examples

Experimental program
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Effect test

Embodiment 1

[0035] The PI film was treated in an 8% NaOH aqueous solution for 10 minutes, and then the treated PI film was soaked in a 10% HCl solution for 5 minutes, washed with water three times, and then vacuum-dried for 12 hours.

[0036] The acid-base treated PI film was washed with detergent, rinsed with distilled water, ultrasonicated in acetone and ethanol for 15 minutes, rinsed with deionized water, and dried for later use.

[0037] Weigh a certain amount of zinc acetate dihydrate in a beaker, and then dropwise add the stabilizer monoethanolamine with the amount of zinc acetate dihydrate and other substances with a dropper, and monoethanolamine will combine with Zn 2+ Combine in a 1:1 ratio. Then add a certain amount of ethylene glycol methyl ether to configure Zn 2+ A mixed solution with a concentration of 0.3mol / L. Place the beaker in a water bath at 75°C and stir for 3 hours to form a yellowish transparent sol. Take out the beaker and dry it, put it in a desiccator and let ...

Embodiment 2

[0041] The PI film was treated in 5% KOH aqueous solution for 40 minutes, and then the treated PI film was soaked in 5% hydrogen sulfuric acid solution for 40 minutes, washed with water three times, and then vacuum-dried for 12 hours.

[0042] The acid-base treated PI film was washed with detergent, rinsed with distilled water, ultrasonicated in acetone and ethanol for 15 minutes, rinsed with deionized water, and dried for later use.

[0043] Weigh a certain amount of zinc acetate dihydrate in a beaker, and then dropwise add the stabilizer monoethanolamine with the amount of zinc acetate dihydrate and other substances with a dropper, and monoethanolamine will combine with Zn 2+ Combine in a 1:1 ratio. Then add a certain amount of ethylene glycol methyl ether to configure Zn 2+ A mixed solution with a concentration of 0.2mol / L. Place the beaker in a 60°C water bath with stirring and heating for 6 hours to form a light yellow transparent sol. Take out the beaker and dry it, p...

Embodiment 3

[0046] The PI thin film in the mass fraction of 20% Ba(OH) 2 Treat in aqueous solution for 2 minutes, then soak the treated PI film in sulfuric acid solution with a mass fraction of 20% for 2 minutes, wash with water for 3 times, and then vacuum dry for 12 hours.

[0047] The acid-base treated PI film was washed with detergent, rinsed with distilled water, ultrasonicated in acetone and ethanol for 15 minutes, rinsed with deionized water, and dried for later use.

[0048] Weigh a certain amount of zinc nitrate in a beaker, and then dropwise add the stabilizer diethanolamine with the amount of zinc nitrate and other substances with a dropper, and diethanolamine will combine with Zn 2+ Combine in a 1:1 ratio. Then add a certain amount of isopropanol to configure Zn 2+ A mixed solution with a concentration of 0.6mol / L. Place the beaker in an 80°C water bath with stirring and heating for 1 hour to form a light yellow transparent sol. Take out the beaker and wipe it dry, put it ...

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Abstract

The invention discloses a process for growth of a ZnO nano-wire array on a flexible substrate by using a solution method. According to the invention, after acid-alkali treatment, a polyimide (PI) film is coated with ZnO sol by using a dip-coating method, and the ZnO sol is prepared from the raw materials of a zinc salt, an amine substance and an organic solvent; then postheat treatment is carried out at a high temperature so as to prepare a seed layer used for growth of ZnO nano-wires, and the ZnO nano-wire array is prepared on the PI film through a low temperature hydro-thermal reaction. The process provided in the invention uses simple equipment without using any special equipment, is easy to operate, enables the prepared ZnO nano-wire array to be uniformly thick and to have a good array form, costs little and is suitable for large scale production.

Description

Technical field: [0001] The invention relates to a simple method for preparing a ZnO nanowire array on a flexible substrate by a wet chemical method, in particular to a method for growing a ZnO nanowire array on a flexible substrate by a solution method without using special equipment. Background technique: [0002] ZnO is a widely used direct wide bandgap (3.36eV, 300K) semiconductor. Its excellent photoelectric properties have made it a research hotspot in various countries in the past decade. The exciton binding energy of ZnO at room temperature is 60meV, and its exciton It can exist stably at room temperature and above, and is an ideal material for preparing semiconductor lasers (LDs) and light-emitting diodes (LEDs). Moreover, like indium oxide and tin oxide, ZnO is transparent in the visible light region, and can conduct electricity after being properly doped, such as doped with aluminum. This characteristic has been widely studied for transparent conductive electrodes...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B5/00C30B7/10C30B29/62B82Y40/00
Inventor 黄培王晓东蒋里锋俞娟
Owner NANJING UNIV OF TECH
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