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Method for preparing lanthanum cuprate (La2CuO4) film by using liquid-phase self-assembly method

A self-assembly method and lanthanum cuprate technology, applied in the field of La2CuO4 film preparation, can solve the problems of complex process, high equipment requirements, and difficulty in preparing high-quality epitaxial films, and achieve simple operation, low equipment requirements, and reaction process easy to control effects

Inactive Publication Date: 2012-06-20
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently, regarding the preparation of La 2 CuO 4 Thin film reports are less, Wang Chunchang [Wang Chunchang.Oxygen Intercalation and Related Properties of La 2 CuO 4 Bulk Samples[D]. Beijing: Tsinghua University, 2004.] Using pulsed laser deposition (PLD), LaAlO 3 As the substrate, the La 2 CuO 4 film, but this method requires high equipment and complicated processes, and it is difficult to prepare high-quality epitaxial films

Method used

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  • Method for preparing lanthanum cuprate (La2CuO4) film by using liquid-phase self-assembly method
  • Method for preparing lanthanum cuprate (La2CuO4) film by using liquid-phase self-assembly method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1) Cleaning of the substrate:

[0022] Rinse the cut silicon substrates with nitric acid, then put them in a beaker containing acetone and ethanol in turn, wash them with an ultrasonic cleaner, and then rinse with distilled water, and then dry them in a blast drying oven at 70°C. Piece A;

[0023] 2) OTS coating:

[0024] The dried substrate A was irradiated in an ultraviolet irradiator for 30 minutes and then placed in a mixed solution of octadecyltrichlorosilane (OTS) and toluene for 30 minutes. After removal, it was cleaned with acetone, and then with N 2 Blow dry, then put it in the ultraviolet irradiation instrument, irradiate with ultraviolet for 25 minutes to obtain substrate B;

[0025] Wherein, the mixed solution of octadecyltrichlorosilane (OTS) and toluene has a volume ratio of octadecyltrichlorosilane (OTS): toluene=1:99;

[0026] 3) Deposition of thin films

[0027] Will analyze pure lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O), copper nitrate (Cu(NO 3 ) 3 ·3H 2 O), citri...

Embodiment 2

[0032] 1) Cleaning of the substrate:

[0033] Rinse the cut silicon substrates with nitric acid, then put them in a beaker containing acetone and ethanol in turn, wash them with an ultrasonic cleaner, and then rinse with distilled water, and then dry them in a blast drying oven at 50°C. Piece A;

[0034] 2) OTS coating:

[0035] The dried substrate A was irradiated in an ultraviolet irradiator for 120 minutes and then placed in a mixed solution of octadecyltrichlorosilane (OTS) and toluene for 20 minutes. After taking it out, it was cleaned with acetone, and then with N 2 Blow dry, then put it in the ultraviolet irradiation instrument, irradiate with ultraviolet for 35 minutes to obtain substrate B;

[0036] Wherein, the mixed solution of octadecyltrichlorosilane (OTS) and toluene has a volume ratio of octadecyltrichlorosilane (OTS): toluene=1:99;

[0037] 3) Deposition of thin films

[0038] Will analyze pure lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O), copper nitrate (Cu(NO 3 ) 3 ·3H 2 O)...

Embodiment 3

[0042] 1) Cleaning of the substrate:

[0043] Rinse the cut silicon substrates with nitric acid, then put them in a beaker containing acetone and ethanol in turn, wash them with an ultrasonic cleaner, then rinse with distilled water, and then dry them in a blast drying oven at 100°C. Piece A;

[0044] 2) OTS coating:

[0045] The dried substrate A was irradiated in an ultraviolet irradiator for 20 minutes, and then placed in a mixed solution of octadecyltrichlorosilane (OTS) and toluene for 40 minutes. After taking it out, it was washed with acetone, and then with N 2 Blow dry, then put it in an ultraviolet irradiation instrument, irradiate with ultraviolet for 50 minutes to obtain substrate B;

[0046] Wherein, the mixed solution of octadecyltrichlorosilane (OTS) and toluene has a volume ratio of octadecyltrichlorosilane (OTS): toluene=1:99;

[0047] 3) Deposition of thin films

[0048] Will analyze pure lanthanum nitrate (La(NO 3 ) 3 ·6H 2 O), copper nitrate (Cu(NO 3 ) 3 ·3H 2 O), cit...

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Abstract

The invention relates to a method for preparing a lanthanum cuprate (La2CuO4) film by using a liquid-phase self-assembly method. The method comprises the following steps of: flushing a silicon substrate by using nitric acid, sequentially putting the silicon substrate in beakers containing acetone and ethanol, respectively cleaning by an ultrasonic cleaner, flushing with distilled water, and drying to obtain a substrate A; irradiating the substrate A in an ultraviolet irradiation instrument, then, putting the substrate A in a mixed solution of octadecyl trichlorosilane and toluol, cleaning by using acetone, blow-drying by using N2, putting the substrate A in the ultraviolet irradiation instrument again, and irradiating with ultraviolet to obtain a substrate B; mixing lanthanum nitrate, copper nitrate and citric acid to obtain a solution, adding glacial acetic acid in the solution to obtain a solution C, and vertically standing the substrate B in the solution C for constant-temperature deposition; and cleaning the deposited substrate by using distilled water, drying, then, putting the substrate in a muffle furnace, and calcining to obtain the La2CuO4 film. According to the method, as the liquid-phase self-assembly method is adopted to prepare the La2CuO4 film, the prepared La2CuO4 film is smaller in grain size and contains no impurity, and the method has the advantages of easilycontrolled reaction process, lower requirements on equipment and simplicity in operation.

Description

Technical field [0001] The present invention relates to a La 2 CuO 4 The preparation method of the film, specifically relates to a liquid-phase self-assembly method for preparing La 2 CuO 4 Thin film method. It is a method for preparing uniform, dense, low-defect and high-strength films. Background technique [0002] With the rapid development of high-temperature superconductivity research, especially the discovery of superconductors above the temperature of liquid nitrogen, it has opened the door to the wide application of superconductors, which also promoted the rapid development of oxide superconductor film physics and technology. As far as basic research is concerned, in thin film materials, due to the lattice mismatch between the thin film and the substrate, stress (strain) is generated in the thin film, which makes the properties of thin film materials different from those of bulk materials. It is necessary to fully understand the physical meaning of these properties to re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/52
Inventor 黄剑锋李意峰李碧曹丽云吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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