Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave

A technology of vacuum evaporation and vapor deposition, which is used in vacuum evaporation plating, chemical instruments and methods, crystal growth, etc., to achieve the effects of good crystallinity, good quality and easy operation

Inactive Publication Date: 2012-06-27
SHANGHAI UNIV
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Problems solved by technology

[0004] So far, no literature has documented the growth of polycrystalline mercury iodide materials by chemical liquid phase vertical deposition combined with vacuum evaporation physical vapor deposition with ultrasonic action.

Method used

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  • Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave
  • Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave
  • Method for producing polycrystal mercuric iodide thick films by vacuum evaporation and vapor phase deposition under action of ultrasonic wave

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Embodiment

[0027] The process and steps in this example are as follows:

[0028] 1. Preparation of Mercury Iodide Film as Seed Layer

[0029] a. Preparation of substrate substrate ITO: clean the surface of ITO conductive glass, put it in acetone solution, anhydrous alcohol solution and deionized water solution in turn for 15 minutes, and then dry the smooth ITO conductive glass.

[0030] b. Preparation of mercury iodide thin film: press 2,7-dibromo-4-hydroxymercury fluorescent red disodium salt (also known as mercury bromide) and iodine tincture reagent according to [Hg 2+ ] And [I ? ], each was prepared into a solution with a concentration of 20g / L, and the volume ratio of the two solutions was 1:3; the mixed solution of the two was poured into the experimental device; the rotating magnet in the actual device was Rotate at a speed of 500 rpm to fully react the two reagents; after 0.5h, the free metal Hg + With I - Ions fully combine to form HgI 2 At this time, adjust the speed of the rotating ...

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Abstract

The invention relates to a production method, which utilizes vertical deposition technology excited by magnetic force mixing to produce polycrystal mercuric iodide thin films and belongs to the technical field of semi-conductor thick film production, wherein the mercuric iodide films are used as seed crystal layers, and high-quality polycrystal mercuric iodide thick films are produced by deposition on the seed crystal layers by of the process of vacuum evaporation and physical vapor phase deposition under the action of ultrasonic wave. The produced polycrystal mercuric iodide thick films are particularly applicable to production of X-ray and Gama-ray polycrystal mercuric iodide thick film detectors. 2,7-di-bromo-4-hydroxyl mercuric fluoresce red di-sodium salt (also called merbromin) and iodine tincture are utilized precursor reaction solution, absolute alcohol is used as solvent, and finally the polycrystal mercuric iodide thin films are produced. The mercuric iodide thin films are used as the seed crystal layers, and the polycrystal mercuric iodide thick films are produced by means of vacuum evaporation and physical vapour phase deposition, and finally, high-quality polycrystal mercuric iodide thick films with columnar grains are obtained on lining substrates.

Description

Technical field [0001] The invention relates to a vertical deposition technique using magnetic stirring excitation to grow a polycrystalline mercury iodide film. The grown polycrystalline mercury iodide film is used as a seed layer, which is deposited on the seed layer by a vacuum evaporation physical vapor deposition method under ultrasonic action A method for preparing high-quality polycrystalline mercury iodide thick film by deposition and growth. The grown high-quality polycrystalline mercury iodide thick film is particularly suitable for the preparation of X-ray and Gama ray polycrystalline mercury iodide thick film detectors, and the invention belongs to the technical field of semiconductor thick film preparation. Background technique [0002] Mercury Iodide (HgI 2 ) Wide band gap (2.13eV), high atomic number (M Hg = 80, M I =53), high resistivity (ρ> 10 13 Ω·cm), high ionization efficiency (52%), excellent physical, chemical and electrical properties, so that mercury io...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/24C30B29/12C30B28/12
Inventor 马磊史伟民刘功龙杨伟光陈亮亮
Owner SHANGHAI UNIV
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