Laser-water jet composite micromachining process and device
A microfabrication and water jet technology, applied in metal processing equipment, laser welding equipment, manufacturing tools, etc., can solve the problems of reduced processing quality, crack damage in processing areas, etc., to achieve strong cooling effect, high processing speed, and reduce thermal impact. Effect
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Embodiment 1
[0025] A single crystal silicon wafer with a thickness of 700 μm was processed, and the material properties are shown in Table 1.
[0026] Table 1 Material properties of monocrystalline silicon wafer
[0027] Density [kg / m 3 ]
Thermal conductivity [W / mK]
Heat capacity[J / kgK]
Thermal diffusivity [m 2 / s]
2329
130
700
7.974×10 -5
1687
[0028] Processing requirements: the width of the thermal damage zone is less than 20 μm
[0029] According to the material properties, thickness and processing requirements of the processed materials, the laser-water jet composite micromachining process conditions are selected as follows:
[0030] Water jet offset distance: 0.6mm
[0031] Laser beam focal plane position (fpp): 0mm
[0032] Laser pulse energy: 0.3mJ
[0033] Moving laser pulse overlap factor: 99.3%
[0034] Water jet pressure: 5MPa
[0035] Water jet erosion angle: 30°
[0036] Water ...
Embodiment 2
[0042] A single crystal silicon wafer with a thickness of 700 μm was processed, and the material properties are shown in Table 1.
[0043] Processing requirements: the single-stroke cutting width is greater than 50 μm (the material removal rate is indirectly characterized by the single-stroke cutting width)
[0044] According to the material properties, thickness and processing requirements of the processed materials, the laser-water jet composite micromachining process conditions are selected as follows:
[0045] Water jet offset distance: 0.6mm
[0046] Laser beam focal plane position (fpp): 0mm
[0047] Laser pulse energy: 0.6mJ
[0048] Moving laser pulse overlap factor: 99.9%
[0049] Water jet pressure: 20MPa
[0050] Water jet erosion angle: 60°
[0051] Water jet target distance: 2mm
[0052] Workpiece installation: the monocrystalline silicon wafer workpiece 4 is installed on the two-axis mobile numerical control workbench 13, and the single crystal silicon wafe...
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