Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof

A cuprous oxide-based, solar cell technology, applied in the field of solar cells, can solve the problems of ineffective separation and collection of photo-generated carriers, inability of built-in electric field separation of photo-generated carriers, and reduction of photosensitive sensitivity of solar cells, etc. The effect of improving photoelectric conversion efficiency, abundant storage capacity, and increasing width

Active Publication Date: 2012-07-11
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the above method, the conversion efficiency of solar cells is much different from the theoretical value, on the one hand, it is because Cu 2 The photogenerated carriers generated in the part of the O light absorbing layer whose distance from the interface is greater than the diffusion length will be recombined before reaching the interface; on the other hand, due to the existence of a large number of interface states at the interface of the two materials, the width of the barrier region It is very small, the generated photo-generated carriers cannot be fully separated by the built-in electric field, and most of them are recombined, which reduces the photosensitivity of the solar cell. Two reasons make the photo-generated carriers unable to be effectively separated and collected, making the photoelectric conversion efficiency very low. Low

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  • Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof
  • Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof

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Effect test

Embodiment 1

[0045] Preparation of cuprous oxide-based PIN junction solar cells with nanostructures, such as figure 1 shown, including the following steps:

[0046] (1) Cleaning the substrate 1: take the glass deposited with a 180nm ITO transparent conductive film as the substrate 1, and ultrasonically clean it in acetone, ethanol, and deionized water for 10 minutes respectively, and use N 2 blow dry.

[0047] (2) Grow P-type cuprous oxide nanowire array 2 on substrate 1 by electrochemical deposition method: use three-electrode method to prepare 0.003mol / L Cu(NO 3 ) 2 and 0.5mol / L KCl aqueous solution, using the substrate 1 cleaned in step (1) as the working electrode, using Ag / AgCl reference electrode and platinum wire counter electrode, and galvanostatic deposition at 60°C for 1h to obtain P Type cuprous oxide nanowire array 2 with a diameter of 50 nm and a length of 0.5 μm.

[0048] (3) Growth insulating layer 3: Deposit a layer of high-resistance zinc oxide on the surface of the P-ty...

Embodiment 2

[0053] Preparation of cuprous oxide-based PIN junction solar cells with nanostructures, such as figure 1 shown, including the following steps:

[0054] (1) Clean the substrate 1: take the glass deposited with a 200nm FTO transparent conductive film as the substrate 1, and then ultrasonically clean it in acetone, ethanol, and deionized water for 15 minutes respectively, and use N 2 blow dry.

[0055] (2) Grow P-type cuprous oxide nanowire array 2 on substrate 1 by electrochemical deposition: use three-electrode method to prepare 0.004mol / L Cu(NO 3 ) 2 and 1mol / L KCl aqueous solution, using the substrate 1 cleaned in step (1) as the working electrode, using the Ag / AgCl reference electrode and the platinum wire counter electrode, and depositing at 70°C for 3 hours by constant current method to obtain P-type The cuprous oxide nanowire array 2 has a diameter of 200 nm and a length of 1.5 μm.

[0056] (3) Growth insulating layer 3: Deposit a layer of high-resistance titanium dio...

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Abstract

The invention relates to a cuprous oxide-based PIN-junction solar battery of a nano structure and a preparation method thereof. The solar battery comprises a substrate, a P-type cuprous-oxide nano-wire array, an insulation layer, an N-type layer, an N-type ohm electrode and a P-type ohm electrode, wherein the P-type cuprous-oxide nano-wire array is grown on the substrate; the insulation layer is deposited on the surface of the P-type cuprous-oxide nano-wire array; the N-type layer is filled outside the insulation layer to form a film layer; the N-type ohm electrode is arranged on the N-type layer; and the P-type ohm electrode is arranged on the P-type cuprous-oxide nano-wire array layer. Due to the adoption of the nano-wire array structure, the junction area of the battery can be improved, the dispersion distance of a carrier can be reduced, the width of a use-up layer can be effectively increased through the PIN structure, and the separation and collection efficiency of the carrier can be greatly improved, so the energy conversion efficiency of the solar battery can be improved. Adopted raw materials are abundant, inexpensive and pollution-free. An electrochemical deposition method, a magnetron sputtering method and an electron beam evaporation method are adopted by the preparation method and can be widely applied to the industrial production, and a promising development prospect can be realized.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell with a cuprous oxide-based PIN structure with a nanowire array structure and a preparation method thereof. Background technique [0002] At present, energy and environmental issues are still global issues that need to be solved urgently, and solar cell technology is an important field for developing clean energy. Ideal solar cell materials should have the characteristics of high conversion efficiency, low cost, no pollution, and no toxicity. Therefore, CuO, Cu 2 O, ZnO, TiO 2 Such inorganic oxide semiconductors have important research value. Cu 2 O is intrinsically P-type, with a forbidden band width of 2.17ev, a high absorption coefficient in the visible region, and an incident light conversion efficiency (IPCE) of up to 85%. 2 O and ZnO, TiO 2 , TCO and other wide-bandgap semiconductors are made into heterojunctions to form a Type II energy ban...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/0296H01L31/0352H01L31/18C30B30/02C30B29/16C30B29/62C30B23/02
CPCY02E10/50Y02E10/548Y02P70/50
Inventor 朱丽萍杨美佳
Owner ZHEJIANG UNIV
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