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Preparation method for tantalum oxide film with high laser damage threshold under high-temperature environment

A technology of laser damage threshold and high temperature environment, applied in the direction of ion implantation plating, metal material coating process, coating, etc. The effect of good stability

Inactive Publication Date: 2013-11-27
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a tantalum oxide thin film with a high laser damage threshold in a high-temperature environment, so as to solve the problem that laser thin-film components cannot withstand high temperatures of hundreds of degrees for a long time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Example 1: The BK7 glass substrate was soaked in petroleum ether, ultrasonically cleaned for 15 minutes, then rinsed with deionized water, and finally dried with high-purity nitrogen. A tantalum oxide film was deposited on the cleaned BK7 substrate by dual ion beam sputtering, and the vacuum degree of the background was 2×10 -4 Pa, the baking temperature is 80°C, and the oxygenation pressure is 5×10 -2 Pa, the argon flow of the sputtering source is 15mL / min, the argon flow of the RF neutralizer is 5mL / min, the flow ratio of argon and oxygen in the auxiliary source is 0.5, and the tantalum target is cleaned for 5 minutes before sputtering , and then plated thin film. The standard damage threshold of the prepared tantalum oxide film was tested at room temperature in a 1-on-1 manner, according to the ISO11254-1 standard, and the energy density at zero damage probability was used as the laser damage threshold of the film. The measured 1064nm The threshold under laser is 1...

Embodiment 2

[0022] Example 2: Soak the quartz substrate in a mixture of petroleum ether and acetone with a volume ratio of 1:1, ultrasonically clean it for 20 minutes, then rinse it with deionized water, and finally dry it with high-purity nitrogen. The tantalum oxide film was plated on the cleaned quartz substrate by double ion beam sputtering, and the vacuum degree of the background was 2.4×10 -4 Pa, the baking temperature is 120°C, and the oxygenation pressure is 8×10 -2 Pa, the argon flow rate of the sputtering source is 20mL / min, the argon flow rate of the RF neutralizer is 4mL / min, the flow ratio of argon gas and oxygen gas in the auxiliary source is 0.4, and the tantalum target is cleaned for 5 minutes before sputtering , and then plated thin film. The standard damage threshold of the prepared tantalum oxide film was tested at room temperature in a 1-on-1 manner, according to the ISO11254-1 standard, and the energy density at zero damage probability was used as the laser damage th...

Embodiment 3

[0023] Example 3: Soak the quartz substrate in a mixture of acetone and ethanol with a volume ratio of 8:1, ultrasonically clean it for 30 minutes, then rinse it with deionized water, and finally dry it with high-purity nitrogen. A tantalum oxide film was deposited on a cleaned quartz substrate by dual ion beam sputtering, and the background vacuum was 1×10 -5 Pa, the baking temperature is 150°C, and the oxygenation pressure is 6×10 -2 Pa, the argon flow of the sputtering source is 80mL / min, the argon flow of the radio frequency neutralizer is 25mL / min, the flow ratio of argon and oxygen in the auxiliary source is 0.1, and the tantalum target is cleaned for 5 minutes before sputtering , and then plated thin film. The standard damage threshold of the prepared tantalum oxide film was tested at room temperature in a 1-on-1 manner, according to the ISO11254-1 standard, and the energy density at zero damage probability was used as the laser damage threshold of the film. The measur...

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Abstract

The invention relates to a preparation method for a tantalum oxide film with a high laser damage threshold under a high-temperature environment and belongs to the preparation method for an optical film. The preparation method comprises the following steps: plating a tantalum oxide film on a clean substrate according to a double ion beam sputtering method; performing post-processing on a prepared film in laser pre-processing and annealing manner, thereby achieving better functions of repairing film defect and relieving film stress; and preparing a laser film capable of being applied to high-temperature environment. The preparation method provided by the invention has the advantages that: 1) the film prepared according to the double ion beam sputtering method is compact, the characteristic of easiness in moisture absorption of a loosened film prepared according to an electronic beam preparation method is improved, and the stability is better; 2) the laser pre-processing and annealing combined method is adopted, thereby overcoming the limitation caused by traditionally adopting a single method, and being beneficial to greatly increasing the threshold; and 3) the film prepared according to the method can be used under a high-temperature environment with the highest temperature at 350 DEG C, and the problem of the prior art that only the laser film used under room temperature can be prepared is solved.

Description

technical field [0001] The invention belongs to a preparation method of an optical thin film, in particular to a preparation method of a tantalum oxide thin film with a high laser damage threshold in a high-temperature environment. Background technique [0002] The establishment of high-power laser systems and the introduction of laser nuclear fusion have put forward more and more stringent requirements on the performance of optical thin films, especially requiring them to have a strong ability to resist laser damage. Over the years, the research focus on damage threshold has mainly focused on film properties and laser parameters. For example, Milam et al. studied the effects of substrate temperature, oxygen partial pressure and deposition rate on Ta during electron beam evaporation. 2 o 5 / SiO 2 The influence of the damage threshold of the antireflection coating (Applied Optics, 1982, 21, 3689~3694.), Abromavicius et al. studied the effect of deposition rate, substrate te...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/00C23C14/08C23C14/58
Inventor 许程杨帅马浩王吉飞郭立童张含卓尹诗斌李大伟强颖怀刘炯天
Owner CHINA UNIV OF MINING & TECH
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