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Preparation method for ZnGa2O4 mono-crystal with octahedral structure

An octahedral and single crystal technology is applied in the field of preparation of octahedral ZnGa2O4 single crystals, which can solve the problems of expensive equipment, complicated operation, and inability to prepare, and achieve the effects of low equipment cost, good repeatability and simple operation.

Active Publication Date: 2012-08-08
江苏亿承林科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Either of these methods cannot prepare octahedral ZnGa 2 o 4 Single crystal, or the equipment is expensive, the operation is complicated, the process is not easy to control, and the repeatability is poor

Method used

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  • Preparation method for ZnGa2O4 mono-crystal with octahedral structure
  • Preparation method for ZnGa2O4 mono-crystal with octahedral structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: step one: will analyze pure gallium oxide (Ga 2 o 3 ) was dissolved in the hydrochloric acid of 0.5mol / L, and constantly stirring to make Ga ion concentration is the suspension A of 0.1mol / L;

[0018] Step 2: Zinc acetate (Zn(CH 3 COO) 2 ) was added in distilled water and continuously stirred to prepare a transparent solution B with a Zn ion concentration of 0.1mol / L;

[0019] Step 3: Mix the suspension A and the transparent solution B at a molar ratio of Zn:Ga=1:1.4 and stir evenly, then add Zn+Ga:analytical pure ethylenediaminetetraacetic acid (EDTA)=1 to the mixed solution : Add analytically pure ethylenediaminetetraacetic acid (EDTA) at a molar ratio of 1, adjust the pH=2.5 of the solution with analytically pure sodium hydroxide, and fully stir for 30min to obtain solution C;

[0020] Step 4: Put the solution C under a UV lamp with a wavelength of 365nm to react for 20 minutes, and then react in a microwave reactor for 3 hours until the water evapo...

Embodiment 2

[0023] Embodiment 2: step one: will analyze pure gallium oxide (Ga 2 o 3 ) is dissolved in the hydrochloric acid of 0.7mol / L, and constantly stirring to make Ga ion concentration is the suspension A of 0.3mol / L;

[0024] Step 2: Zinc acetate (Zn(CH 3 COO) 2 ) was added in distilled water and continuously stirred to prepare a transparent solution B with a Zn ion concentration of 0.1mol / L;

[0025] Step 3: Mix the suspension A and the transparent solution B at a molar ratio of Zn:Ga=1:1.6 and stir evenly, then add Zn+Ga:analytical pure ethylenediaminetetraacetic acid (EDTA)=1 to the mixed solution : Add analytically pure ethylenediaminetetraacetic acid (EDTA) at a molar ratio of 1, adjust the pH=3 of the solution with analytically pure sodium hydroxide, fully stir for 40min to obtain solution C;

[0026] Step 4: Put the solution C under a UV lamp with a wavelength of 365nm to react for 10 minutes, and then react in a microwave reactor for 3 hours until the water evaporates t...

Embodiment 3

[0028] Embodiment 3: step one: will analyze pure gallium oxide (Ga 2 o 3 ) was dissolved in the hydrochloric acid of 0.3mol / L, and constantly stirring to make Ga ion concentration is the suspension A of 0.5mol / L;

[0029] Step 2: Zinc acetate (Zn(CH 3 COO) 2 ) was added in distilled water and continuously stirred to prepare a transparent solution B with a Zn ion concentration of 0.1mol / L;

[0030] Step 3: Mix the suspension A and the transparent solution B at a molar ratio of Zn:Ga=1:1.8 and stir evenly, then add Zn+Ga:analytical pure ethylenediaminetetraacetic acid (EDTA)=1 to the mixed solution : Add analytically pure ethylenediaminetetraacetic acid (EDTA) at a molar ratio of 1, adjust the pH=2 of the solution with analytically pure sodium hydroxide, and fully stir for 60min to obtain solution C;

[0031] Step 4: Put the solution C under a UV lamp with a wavelength of 365nm to react for 40 minutes, and then react in a microwave reactor for 2 hours until the water evapora...

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Abstract

The invention relates to a preparation method for a ZnGa2O4 mono-crystal with an octahedral structure. The preparation method comprises the following steps: dissolving gallium oxide in hydrochloric acid, thereby obtaining a suspension A; adding zinc acetate into distilled water, thereby obtaining a transparent solution B; after mixing the suspension A with the transparent solution B, adding edetic acid into the mixed solution, and using sodium hydroxide for adjusting the pH of the solution to be 2-3, thereby obtaining a solution C; placing the solution C under an ultraviolet lamp for reacting; reacting in a microwave reactor till water volatizes, thereby obtaining dry gel; grinding the obtained dry gel; and placing into a muffle furnace for reacting at 400-600 DEG C, thereby obtaining the final product of the ZnGa2O4 mono-crystal with the octahedral structure. The preparation method provided by the invention has the beneficial effects that the raw materials are easily obtained, the equipment cost is low, the operation is simple and the repeatability is excellent.

Description

Technical field: [0001] The present invention relates to a ZnGa 2 o 4 The preparation method of single crystal, specifically relates to a kind of octahedral structure ZnGa 2 o 4 Single crystal preparation method. Background technique: [0002] ZnGa 2 o 4 It is a composite oxide with a cubic spinel structure. It has a wide application prospect and can be used in field emission displays, thin film electroluminescent displays, and vacuum fluorescent displays. At the same time, due to its superior thermal and chemical stability, it can Withstand higher current impact, which can replace sulfide in light-emitting diodes, photodetectors, and low-voltage luminescent materials; in terms of photocatalysis, mesoporous ZnGa 2 o 4 for CO 2 The photoreduction of CO 2 converted into hydrocarbon fuels; in the degradation of benzene series pollutants, ZnGa 2 o 4 outperforms TiO 2 and the photocatalytic activity of its dopants, so the spinel crystal structure ZnGa 2 o 4 Crystals...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/26C30B1/00C30B1/10
Inventor 黄剑锋刘亮亮张晓薇曹丽云吴建鹏王开通
Owner 江苏亿承林科技有限公司
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