Preparation method of gallium nitride self-supporting substrate

A self-supporting substrate and supporting substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, nanotechnology, etc., can solve the problems of high dislocation density of epitaxial materials and uneven distribution of nanoscale patterned substrates, etc. Achieve the effect of low requirements for preparation conditions, improve availability, and reduce dislocation density

Active Publication Date: 2012-08-22
SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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  • Abstract
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Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a method for preparing a high-quality GaN self-supporting substrate, which

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  • Preparation method of gallium nitride self-supporting substrate
  • Preparation method of gallium nitride self-supporting substrate
  • Preparation method of gallium nitride self-supporting substrate

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[0018] see figure 1 , showing a method for preparing a GaN self-supporting substrate according to an embodiment of the present invention, the method comprising the following steps:

[0019] S01: preparing a GaN template;

[0020] S02: forming an Al layer on the GaN template;

[0021] S03: electrochemically corroding the Al layer to form an AAO film;

[0022] S04: Depositing a mask into the pores of the AAO film;

[0023] S05: removing the AAO film, and forming a mask lattice on the GaN template;

[0024] S06: Etching the GaN template with mask lattice;

[0025] S07: removing the mask to obtain a GaN nano-pillar array;

[0026] S08: growing a GaN film on the GaN nano-pillar array.

[0027] In step S01, the GaN template is formed by growing GaN on a heteroepitaxial substrate, and the heteroepitaxial substrate is Al 2 o 3 , SiC, Si, or any one of GaAs; the growth method of growing a layer of GaN on the heteroepitaxial substrate can be HVPE, metal organic chemical vapor de...

Embodiment 1

[0040] Using MOCVD method in Al 2 o 3 A GaN film of about 3 μm was grown on the (0001) surface of the substrate, and this film was used as a HVPE template. At a temperature of 200 ° C, a 300 nm thick metal Al thin layer was deposited on the surface of the template by electron beam evaporation. Put the template with Al layer into oxalic acid solution (0.3mol / L), anodize at room temperature with a voltage of 40V for about 15min, at this time the metal Al is electrochemically corroded into porous AAO with regular distribution, and place the template at 30°C Soak in 5wt% phosphoric acid solution for 40min, after cleaning, electron beam deposition of 20nm thick Ni in the nanopore, and then use 0.2mol / L NaOH to remove the anodic aluminum oxide, then obtain metallic Ni nanoscale on the GaN template Lattice; put the template into an ICP reaction chamber for etching, remove metal Ni with a mixed solution of nitric acid: hydrofluoric acid = 1:3, and obtain a GaN nano columnar array. F...

Embodiment 2

[0042] Using the HVPE method in Al 2 o 3 A GaN film of about 3 μm was grown on the substrate (0001), and this film was used as a HVPE template. At a temperature of 200 ° C, a 400-nm-thick metal Al thin layer was deposited on the surface of the template by electron beam evaporation. Put the template with Al layer into oxalic acid solution (0.3mol / L), anodize at room temperature with a voltage of 40V for about 20min, at this time the metal Al is electrochemically corroded into porous AAO with regular distribution, and place the template at 30°C Soak in 5wt% phosphoric acid solution for 50min, after cleaning, electron beam deposit 25nm thick Ni in the nanopore, and then use 0.2mol / L NaOH to remove the anodic aluminum oxide, then obtain metal Ni nanoscale on the GaN template Lattice; put the template into the RIE reaction chamber for etching, and remove metal Ni with a mixed solution of nitric acid: hydrofluoric acid = 1:3 to obtain a GaN nano-columnar array. Finally, the GaN co...

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Abstract

The invention is applicable to the field of material preparation, and provides a preparation method of a gallium nitride self-supporting substrate, which comprises the following steps: preparing a uniformly distributed gallium nitride nanocolumn array by electron beam evaporation, electrochemical corrosion and etching, and putting the gallium nitride nanocolumn array in a reaction chamber to grow a gallium nitride film. The preparation method provided by the invention lowers the dislocation density of the gallium nitride epitaxial layer, the dislocation density distribution is uniform, and the gallium nitride self-supporting substrate can be conveniently stripped. The method has the advantage of low facility request, is simple and easy to implement, and is applicable to both scientific experiments and mass production.

Description

technical field [0001] The invention belongs to the field of material preparation, and in particular relates to a preparation method of a gallium nitride self-supporting substrate. Background technique [0002] As a typical representative of the third-generation semiconductor materials, gallium nitride (GaN) has excellent characteristics such as high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, and is considered to be the world's most Advanced semiconductor materials have attracted much attention. In recent years, it has received more applications and attention in high-efficiency blue, green, violet, and white light-emitting diodes and lasers. Because it is difficult to directly synthesize GaN single crystal, the dissociation pressure of nitrogen is very high, which requires high temperature and high pressure conditions, and the size of the grown single crystal...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/20B82Y40/00
Inventor 王新中王瑞春谢华何国荣刘德新杜军高潮
Owner SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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