Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

In-ga-o oxide sintered body, target, oxide semiconductor thin film, and manufacturing methods therefor

A technology of oxide semiconductor and sintered body, which is applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve problems such as insufficient research, and achieve the effect of suppressing abnormal discharge and stable reproducibility

Active Publication Date: 2012-08-29
IDEMITSU KOSAN CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In this way, studies on targets used when forming oxide semiconductor films by sputtering are not sufficient.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • In-ga-o oxide sintered body, target, oxide semiconductor thin film, and manufacturing methods therefor
  • In-ga-o oxide sintered body, target, oxide semiconductor thin film, and manufacturing methods therefor
  • In-ga-o oxide sintered body, target, oxide semiconductor thin film, and manufacturing methods therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0131] Indium oxide powder with an average particle size of 0.98 μm and gallium oxide powder with an average particle size of 0.96 μm were weighed so that the atomic ratio Ga / (Ga+In) shown in Table 1 was obtained, finely pulverized and mixed uniformly, and added to the molding Granulation with a binder. Next, the raw material mixed powder was uniformly filled in a mold, and compression molding was performed at a press pressure of 140 MPa with a cold press. The molded body thus obtained was fired in a sintering furnace at the firing temperature and firing time shown in Table 1 to produce a sintered body.

[0132] The firing atmosphere was an oxygen atmosphere during the temperature rise, and otherwise in the air (atmosphere), and the firing was performed at a temperature rise rate of 1°C / min and a temperature fall rate of 15°C / min.

[0133] In addition, the average particle diameter of the raw material oxide powder used was measured with the laser diffraction particle size dis...

Embodiment 7

[0164] On a glass substrate and with a thermal oxide film (SiO 2 ) on silicon substrates, using the targets (Ga / (In+Ga)=0.114) obtained in Example 1, respectively, by DC magnetron sputtering, thin films with a film thickness of 50 nm were formed.

[0165] For the above sputtering, vacuum exhaust was performed until the back pressure reached 5 × 10 -4 Pa and then, while flowing 9 sccm of argon gas and 1 sccm of oxygen gas, the pressure was adjusted to 0.4 Pa, and the sputtering power was 100W at room temperature.

[0166] The crystal structure of the thin film formed on the glass substrate immediately after film formation was confirmed by XRD. As a result, no clear diffraction peak was observed, and it was confirmed that it was amorphous. The glass substrate on which the thin film was formed was put into a heating furnace heated to 300° C. in the air, and treated for 1 hour. As a result of XRD measurement of the thin film after the annealing treatment, only the peak of the b...

Embodiment 8

[0180] On a glass substrate and on a silicon substrate with a thermally oxidized film (SiO2) with a thickness of 100 nm, using the target (Ga / (In+Ga)=0.128) obtained in Example 3, respectively, by DC magnetron sputtering, respectively A thin film with a film thickness of 50 nm was formed.

[0181] For the above sputtering, vacuum exhaust was performed until the back pressure reached 5 × 10 -4 Pa and then, while flowing 8.5 sccm of argon gas and 1.5 sccm of oxygen gas, the pressure was adjusted to 0.4 Pa, and the sputtering power was 100W at room temperature.

[0182] The crystal structure of the thin film formed on the glass substrate immediately after film formation was confirmed by XRD. As a result, no clear diffraction peak was observed, and it was confirmed that it was amorphous. The glass substrate on which the thin film was formed was put into a heating furnace heated to 300° C. in the air, and treated for 1 hour. As a result of XRD measurement of the thin film after ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
particle diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

Provided is an oxide sintered body, the crystal structure of which comprises indium oxide which essentially has a bixbyite structure. Gallium atoms are in solid solution with the indium oxide, and the atomic ratio Ga / (Ga+In) is between 0.10 and 0.15.

Description

technical field [0001] The present invention relates to an In-Ga-O-based oxide sintered body, a target, an oxide semiconductor thin film, their production methods, and a thin film transistor including the oxide semiconductor thin film. Background technique [0002] Field-effect transistors such as thin-film transistors (TFTs) are widely used as unit electronic components of semiconductor memory integrated circuits, high-frequency signal amplification components, and liquid crystal drive components. Currently, they are the most practical electronic devices. Among them, with the rapid development of display devices in recent years, in various display devices such as liquid crystal display devices (LCD), electroluminescent display devices (EL), field emission displays (FED), etc., as the driving voltage applied to display elements, TFTs are often used as switching elements for driving display devices. [0003] As a material of a semiconductor layer (channel layer) which is a m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/00C23C14/08C23C14/34H01L21/203
CPCC04B35/01C04B35/645C04B35/6455C04B2235/3286C04B2235/5436C04B2235/5445C04B2235/604C04B2235/656C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/6585C04B2235/664C04B2235/76C04B2235/77C04B2235/786C04B2235/95C04B2235/963C23C14/3414H01L21/02565H01L21/02631C23C14/086C23C14/35C23C14/5806C23C14/5813C23C14/5826C23C14/5873
Inventor 江端一晃笘井重和矢野公规
Owner IDEMITSU KOSAN CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com