Method for preparing silicon carbide nanometer particle and composite material thereof by evaporating solid raw materials

A nanoparticle and composite material technology, applied in the field of nanomaterial preparation, can solve the problems of complex process, high cost, easy introduction of external impurities, etc., and achieve the effect of simple preparation process and low cost

Inactive Publication Date: 2012-09-26
DALIAN UNIV OF TECH
View PDF2 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemical Metallurgy, 1996, 17(4): 310-315), wherein the organic raw material methyltrichlorosilane is highly toxic and dangerous, and it is also harmful to the environment and equipment, and the resulting product is easily introduced into the outside world Impurities
[0004] The above-mentioned preparation method of nano-silicon carbide has some shortcomings such as complex process, high cost, low yield, low purity, and large environmental pollution to a certain extent.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing silicon carbide nanometer particle and composite material thereof by evaporating solid raw materials
  • Method for preparing silicon carbide nanometer particle and composite material thereof by evaporating solid raw materials
  • Method for preparing silicon carbide nanometer particle and composite material thereof by evaporating solid raw materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take micron-sized carbon powder and silicon powder with a molar ratio of 1:0.9, mix them evenly and grind them, press them into a block under a pressure of 25MPa, put them into a graphite crucible as an anode, and a graphite rod as a cathode, adjust the distance between the two electrodes to 30mm . Vacuum the reaction chamber to about 10 -2 Pa, filled with argon and hydrogen at a ratio of 2:1 to reach 5×10 4 Pa and 2.5×10 4 Pa. Turn on the cooling water system, turn on the power and start the arc, adjust the current and the distance between the two electrodes and stabilize the arc, evaporate the bulk target, form atomic clusters and gather them into nanoparticles and deposit them on the wall of the reaction chamber, and collect the powder through passivation process.

Embodiment 1

[0027] The SEM image of silicon carbide nanoparticles obtained in embodiment one is as follows figure 1 Shown as spherical particles.

[0028] The obtained silicon carbide nanoparticles XRD pattern of embodiment one is as follows figure 2 As shown, it is shown as single-phase silicon carbide.

Embodiment 2

[0030] Take micron-sized carbon powder and silicon powder with a molar ratio of 4.3:1, mix them evenly and grind them, press them into a block under a pressure of 25MPa, put them into a graphite crucible as an anode, and a graphite rod as a cathode, adjust the distance between the two electrodes to 30mm . Vacuum the reaction chamber to about 10 -2 Pa, filled with argon and hydrogen at a ratio of 11:1 to reach 5.5×10 4 Pa and 5×10 3 Pa. Turn on the cooling water system, turn on the power and start the arc, adjust the current and the distance between the two electrodes and stabilize the arc, evaporate the bulk target, form atomic clusters and gather them into nanoparticles and deposit them on the wall of the reaction chamber, and collect the powder through passivation process.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing silicon carbide nanometer particle and a composite material thereof by evaporating solid raw materials and belongs to the technical field and application field of nanometer material. The method for preparing silicon carbide nanometer particle and the composite material thereof by evaporating solid raw materials is characterized in that automatically controlled direct-current arc plasma equipment is utilized to uniformly mix the solid raw materials which are micron silica powder and carbon powder according to a certain ratio and shape the same into blocks by compressing to obtain an anode, a graphite rod is utilized as a cathode, then the raw materials are evaporated at an atmosphere mixed by inert gas and hydrogen gas by a certain ratio to obtain single-phase silicon carbide nanometer particle or multi-phase composite material. The method for preparing silicon carbide nanometer particle and the composite material thereof by evaporating solid raw materials is simple in preparation technology, low in cost, applicable to large-scale preparation, and capable of controlling phase composition and sizes and shapes of prepared particles.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and relates to a method for preparing silicon carbide nanoparticles and composite materials thereof by evaporating solid raw materials. Background technique [0002] Silicon carbide has high hardness, mechanical strength, thermal conductivity, high temperature strength, creep resistance, oxidation resistance and acid and alkali corrosion resistance. Its high temperature strength and creep resistance are better than metals and intermetallic compounds, thermal conductivity and thermal shock resistance are better than oxide ceramics, and its hardness is second only to diamond, and its wear resistance is 5-20 times that of cast iron and rubber. , is the main material for making grinding and cutting supplies, and can also be used as a high-temperature indirect heating material in the non-ferrous metal smelting industry. In addition, silicon carbide has the advantages of wide band gap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B31/36B82Y40/00C01B32/984
Inventor 董星龙薛方红甘小荣黄昊全燮
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap