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Method for manufacturing three-dimensional superconduction micro-nano device

A superconducting and device technology, applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as parasitic effects and noise, affecting the actual performance of devices, etc., and achieve the effect of improving efficiency and high process controllability

Active Publication Date: 2012-11-07
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on this experimental result, in the document "Three-dimensional nanoscale superconducting quantum interference device pickup loops", App.Phys.Lett.2010Vol.97.222506, FIB was first used to deposit SIO 2 The insulating layer isolates the prepared Nb superconducting quantum interference device from the free-standing tungsten three-dimensional nanostructure detection coil to be grown, and then forms a detection coil perpendicular to the substrate plane by focused ion beam-induced chemical vapor deposition electrostatic displacement method , but in these methods, there is ion beam-induced residual deposition, which is likely to provide additional conductive and coupling channels, and there are parasitic effects and noise problems, which affect the actual performance of the device

Method used

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  • Method for manufacturing three-dimensional superconduction micro-nano device
  • Method for manufacturing three-dimensional superconduction micro-nano device
  • Method for manufacturing three-dimensional superconduction micro-nano device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] SiO based on focused ion beam material growth and irradiation 2 The three-dimensional deformation control of superconducting tungsten nanowires on a / Si substrate includes the following steps:

[0089] (1) Sample placement and fixation:

[0090] SiO 2 / Si substrate (20) is fixed on a sample holder with a horizontal surface from the back of the substrate with conductive carbon tape, and the sample fixed on the sample holder is placed on the sample stage in the double beam SEM / FIB cavity. The system used The angle between the incident direction of FIB and the horizontal plane is 38°.

[0091] (2) Growth of superconducting tungsten nanowires perpendicular to the substrate

[0092] Evacuate, after the vacuum meets the requirements, turn on the electron gun (5kV electron beam acceleration voltage, 30μm electron beam diaphragm) and ion gun (30kV ion beam acceleration voltage, 1pA ion beam current), and tilt the sample stage 52° to make The ion beam is incident perpendicular to the su...

Embodiment 2

[0108] SiO 2 The preparation of a tungsten three-dimensional superconducting detection coil perpendicular to the superconducting quantum interference device in the plane of the / Si substrate includes the following steps:

[0109] 1) Preparation of superconducting Josephson junction devices: in SiO 2 / Si substrate (30) adopts plasma laser deposition to grow Nb film, and then forms the resist pattern of Josephson junction device by photolithography, and then adopts reactive ion dry etching-deglue to obtain image 3 The device structure shown in 31.

[0110] 2) Growth of tungsten nano-piers: Fix the sample obtained in 1) on the sample holder with conductive silver glue, send it into the SEM / FIB cavity and fix it on the sample stage; tilt the sample stage clockwise by 52° to make the lining The bottom surface is perpendicular to the incident direction of the ion beam. Tungsten source for heating GIS (W(CO) 6 ), turn on the electron beam ion beam, select the ion beam current of 10pA, a...

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Abstract

The invention discloses a method for manufacturing a three-dimensional superconduction micro-nano device, relating to three-dimensional micro-nano device technology. The method provided by the invention comprises the following steps: (1), growing a superconduction electrode contact block or a connecting wire; (2) placing and fixing a processed sample in the step (1); (3), putting the sample fixed on a sample support on a sample stage arranged in a vacuum chamber of an ion beam device; (4) growing a superconduction micro-nano material freely standing on the superconduction electrode contact block or the connecting wire; (4), controlling deformation of the micro-nano material manufactured in (4B); and (6), obtaining a finish product. In the manufacturing method provided by the invention, a superconduction micro-nano structure which is not positioned in a support substrate plane is manufactured based on the control for the deformation of the freely-standing nano material by ion beam irradiation, so as to form the three-dimensional superconduction micro-nano device which is in a certain included angle with the support substrate plane; and the method provided by the invention is flexible in process, high in efficiency and good in control.

Description

Technical field [0001] The invention relates to the technical field of three-dimensional micro-nano devices, and is a method for manufacturing three-dimensional superconducting three-dimensional micro-nano devices, in particular to a method for preparing free-standing nano-materials based on the deformation manipulation of ion beam irradiation to prepare a device that is not located in the plane of a supporting substrate The superconducting micro-nano structure forms a three-dimensional superconducting micro-nano device that forms a certain angle with the plane of the supporting substrate. Background technique [0002] Superconducting devices have extremely broad application prospects. Among them, quantum interferometers, electromagnetic sensors, and magnetometers have much higher sensitivity to magnetic fields and electromagnetic radiation than conventional devices, and can be used for ultra-sensitive signal detection. At the same time, superconducting devices have extremely low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82Y40/00
Inventor 李无瑕崔阿娟顾长志
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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