Transition layer for CIGS-based film photovoltaic cell and preparation method of transition layer

Abstract

The invention discloses a transition layer for a CIGS-based film photovoltaic cell and a preparation method of the transition layer. The preparation method comprises the steps of: providing a soda-lime glass substrate, forming a transition layer covering the surface of the soda-lime glass substrate, forming a molybdenum layer covering the transition layer, forming a light absorbing layer having a copper pyrite structure and covering the molybdenum layer, forming a buffer layer covering the light absorbing layer, and forming a window layer covering the buffer layer. According to the invention, the transition layer is deposited on the surface of the glass substrate, thus the adhesion problem between a molybdenum electrode layer and the glass substrate can be efficiently solved, and sodium materials can be prevented from uncontrollably diffusing into the light absorbing layer.

Description

technical field

[0001] The invention relates to the technical field of thin film solar cells, in particular to a transition layer of a copper indium gallium selenide (sulfur) thin film cell with a chalcopyrite structure and a preparation method thereof. Background technique

[0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a direct bandgap P-type semiconductor material with an absorption coefficient as high as 10 5 / cm, 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of th...

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