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Method and system for preparing detector chip by applying bicolor infrared material

A detector chip and infrared material technology, applied in the field of communication, can solve problems such as complex process and achieve the effect of simple preparation process

Active Publication Date: 2014-11-26
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above analysis, the present invention aims to provide a method and system for preparing a detector chip using two-color infrared materials to solve the above-mentioned complex process problems

Method used

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  • Method and system for preparing detector chip by applying bicolor infrared material
  • Method and system for preparing detector chip by applying bicolor infrared material
  • Method and system for preparing detector chip by applying bicolor infrared material

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Effect test

Embodiment 1

[0051] Such as figure 1 The method for preparing a detector chip from a two-color infrared material according to an embodiment of the present invention is shown, and the preparation method of the material includes the following steps:

[0052] S101, preparing a two-color infrared material;

[0053] S102, performing mesa etching on the two-color infrared material;

[0054] S103, implanting Be ions on the InSb substrate to form a P-on-N diode, implanting B ions on the HgCdTe material to form an N-on-P diode, and the implantation dose of the ion implantation is 5×10 14 / cm 2 ~5×10 15 / cm 2 , the injection energy is 200-500 keV, and the injection off-angle is 7°C;

[0055] Among them, the implanted region obtained after mesa etching includes two parts, one part goes deep into the InSb substrate layer with (211) crystal orientation, and the other part goes deep into the HgCdTe material layer, specifically as Figure 6 shown.

[0056] S104, annealing the two-color infrared mate...

Embodiment 2

[0063] Such as figure 2 The illustrated embodiment of the present invention provides another method for preparing a detector chip from a two-color infrared material, the method comprising the following steps:

[0064] S201, performing cutting, grinding and polishing operations on the InSb crystal to obtain an InSb substrate with an epitaxial (211) crystal orientation;

[0065] S202, processing the (211) oriented InSb substrate to obtain the surface state required by HgCdTe molecular beam epitaxy;

[0066] S203, growing a CdTe buffer layer on the (211) oriented InSb substrate;

[0067] As a preferred embodiment of the present invention, the step of growing the CdTe buffer layer on the (211) crystal orientation InSb substrate specifically includes: the (211) crystal orientation InSb substrate is degassed at a temperature of 350- Degas at 450°C, then raise the temperature of the InSb substrate to 480-520°C under the protection of the Te beam to remove the surface oxide layer; ...

Embodiment 3

[0092] A preparation system for preparing a detector chip using the two-color infrared material of the present invention, such as image 3 As shown, the system includes:

[0093] Two-color infrared material preparation system 31, used to prepare two-color infrared materials;

[0094] The mesa etching equipment 32 is used to perform mesa etching treatment on the two-color infrared material, and is also used to etch the contact hole in plasma gas, methane and hydrogen, and the etching depth of the contact hole is 1-3 microns;

[0095] Ion implantation equipment 33 is used to implant Be ions on the InSb substrate to form P-on-N diodes, and implant B ions to the HgCdTe material to form N-on-P diodes. The implantation dose of ion implantation is 5×10 14 / cm 2 ~5×10 15 / cm 2 , the injection energy is 200-500 keV, and the injection off-angle is 7°C;

[0096] Annealing equipment 34, used to anneal the two-color infrared material after ion implantation under protective atmosphere ...

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Abstract

The invention discloses a method and system for preparing a detector chip by applying a bicolor infrared material, and the preparation process is simple. The method comprises the following steps of: preparing the bicolor infrared material; then performing mesa etching treatment and etching of an ion injection region, injecting Be ions on an InSb substrate to form a P-on-N diode, and injecting B ions on an HgCdTe material to form an N-on-P diode; performing annealing treatment on the bicolor infrared material after ion injection under a protective atmosphere; further performing growth of a passivation layer in plasma gas, wherein the thickness of the passivation layer is 400-800nm; performing contact hole etching in the plasma gas, methane and hydrogen; and then performing deposition treatment of a metal film layer and electrode treatment to form the bicolor detector chip. The preparation system of the infrared detection material comprises a bicolor infrared detection material preparation system, an etching device, an ion injection device, an annealing device, a magnetron sputtering device, an ion beam milling device and an electrode treatment device.

Description

technical field [0001] The invention relates to the field of communication technology, in particular to a method and system for preparing a detector chip using a two-color infrared material. Background technique [0002] Infrared detector chips can be widely used in military and civil fields such as reconnaissance, resource investigation, and astronomical observation. The dual / multi-color infrared detector chip has better target detection and recognition capabilities because it can detect two or more bands of infrared radiation at the same time. The core device of the system. [0003] At present, the two-color infrared detector chip mainly uses mercury cadmium telluride film material, which is based on the cadmium zinc telluride substrate or other alternative substrates, and the multi-layer mercury cadmium telluride film with specific components is prepared by molecular beam epitaxy, and then the two-color infrared detector is prepared. chip. [0004] The disadvantage of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 周立庆孙浩刘铭巩锋王经纬王丛韦书领
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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