Preparation method of scandium nitride cubic crystal

A technology of cubic crystals and scandium nitride, which is applied in the field of preparation of scandium nitride cubic crystals, can solve the problems of restricting the development of semiconductor materials, harsh preparation conditions, cumbersome preparation process, etc., and achieves no template, good crystallinity and good repeatability Effect

Inactive Publication Date: 2014-02-26
JILIN UNIV
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Problems solved by technology

[0004] At present, due to the limitations of experimental techniques, there is still little progress in the preparation of ScN, and a small number of work mainly focuses on the preparation of thin film materials (Appl.Phys.Lett.77, 2485 (2000); J.Appl.Phys.84, 6034(1998); J.Appl.Phys.86,5524(1999); J.Appl.Phys.90,1809(2001)), and the preparation conditions are harsh, requiring extremely high vacuum conditions and high temperatures, The preparation process is cumbersome, the output is very low, and due to the limitations of the application of thin film materials, the development of semiconductor materials based on ScN is greatly restricted.
[0005] The report of ScN cubic crystal structure prepared by arc method has not yet appeared

Method used

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  • Preparation method of scandium nitride cubic crystal
  • Preparation method of scandium nitride cubic crystal
  • Preparation method of scandium nitride cubic crystal

Examples

Experimental program
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Effect test

Embodiment 2

[0031] Example 2 The whole process of preparing ScN cubic crystal.

[0032] Using high-purity rare earth metal Sc and nitrogen as raw materials, metal Sc (purity 99.99%) is pre-bridged, and pressed into a metal ingot with a diameter of 12mm and a thickness of 1-3mm. Place the pressed metal Sc ingot in the graphite pot, put it into the anode of the copper pot in the reaction chamber of the DC arc discharge device, and place the cathode of the tungsten rod and the anode of the copper pot opposite to each other. First evacuate the reaction chamber until the air pressure is lower than 1Pa, fill it with high-purity nitrogen (volume fraction greater than 99.99%), repeat vacuuming to below 1Pa to wash away the residual air in the vacuum system, and then pass high-purity nitrogen to the pre- Discharge after setting the pressure at 20kPa. When starting the arc, set the arc current to 100~120A, keep the arc stable at 15~25V, and the length of the positive arc column area is 0.5cm (keep...

Embodiment 3

[0035] Embodiment 3 prepares the whole process of ScN cubic crystal

[0036] In embodiment 3, the amount of changing reaction gas is 40kPa, and the reaction time is controlled at 15min. All the other experimental conditions are the same as in embodiment 2. After the reaction, a metal luster, blue-green powder is collected in the anode deposition area (graphite pot). body. Figure 9 The scanning electron microscope pictures of the ScN samples obtained by the improved preparation method are given. The pictures show that the prepared ScN cubic crystals are also sharp-edged, smooth and flat, with a quasi-cubic or cuboid block structure in shape and a size of 20-50 μm.

Embodiment 4

[0037] Embodiment 4 prepares the whole process of ScN cubic crystal

[0038] In embodiment 4, the amount of reaction gas is changed to 10kPa, and the reaction time is controlled at 10min. All the other experimental conditions are the same as in embodiment 2. After the reaction, metallic luster and blue-green are still collected in the anode deposition area (graphite pot). Powder. Figure 10 The scanning electron microscope picture of the ScN sample obtained by this preparation method is given. The picture shows that the prepared ScN cubic crystal is not much different from the samples prepared in Examples 2 and 3, and still maintains a quasi-cubic or cuboid block structure. .

[0039] In Examples 3 and 4, the gas pressure and reaction time were changed respectively, and metallic luster, blue-green powder was still collected in the deposition area of ​​the anode graphite pot. It can be considered that the reaction gas pressure and reaction time have little effect on the morph...

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Abstract

The invention provides a preparation method of scandium nitride cubic crystals, belonging to the technical field of preparation of a rare earth nitride nanometer material. The prepared scandium nitride cubic crystal comprises a regular cube or cuboid which has a flat and smooth surface and is uniform in appearance and dimension. With the adoption of the preparation method, the high-purity rare earth metal is directly reacted with nitrogen through a direct current arc plasma discharging device under the assistance of a high-temperature low-air pressure system condition and plasma, so as to prepare into powder with metallic luster and showing bluish green. According to the preparation method provided by the invention, the direct current arc plasma discharging device is utilized at the first time to synthesize scandium nitride cubic crystal which has high impurity and is uniform in appearance and dimension; the preparation method is simple, reliable, high in repeatability, short in reaction time, low in energy consumption, needs no the harsh vacuum condition, is environment-friendly, and has high output of products; and the scandium nitride cubic crystal has outstanding physical properties such as electricity, mechanics and the like, thus the scandium nitride cubic crystal can be widely applied in the fields of semiconductor devices and durable protecting coating and the like.

Description

technical field [0001] The invention belongs to the technical field of rare earth nitride nanomaterials and their preparation, and in particular relates to a simple and efficient method for preparing scandium nitride cubic crystals. Background technique [0002] Transition Metal Nitrides (TMN) have been widely used in the wear-resistant protective layer of materials for a long time because of their high mechanical strength and high hardness. Such interesting physical properties make it have broad application prospects in the field of electronics industry (Blackie Academic & Professional, London, 1996, pp.107–120.). Compared with traditional semiconductor materials, transition metal nitrides are a type of intermetallic compound formed by inserting element N into the transition metal lattice. It has three substances: covalent compounds, ionic crystals and transition metals. nature. Due to the insertion of element N, the metal lattice expands, the metal spacing and unit cell ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/06B82Y30/00
Inventor 崔啟良丛日东祝洪洋武晓鑫贾岩谢晓君尹广超张健石蕊
Owner JILIN UNIV
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