P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously

Abstract

The invention discloses a P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously is composed of a lower electrode, an induction layer I, an induction layer II and an upper electrode which are laminated sequentially. The lower electrode is metal which is easy to be oxidized into a metal ion under the forward electric field effect; the induction layer I is an N-type oxide; the induction layer Ii is a P-type oxide; the upper electrode is a metal or electric conducting compound with stable properties under the electric field effect; the lower electrode grows metal nanocrystalline particles spontaneously in the induction layer I under the forward electric field effect, becomes a lower resistor when a reverse bias voltage is added for the lower electrode, thus the operation of data '1' storage is carried out, and becomes a high resistor when a forward or reverse bias voltage is added for the lower electrode, thus the operation of data '0' storage is carried out. The P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously provided by the invention has the advantages that the resistive random access memory acts as an induction factor of an electric conducting channel by utilizing metal nanocrystals; and the number of formed nanocrystals is controlled through the induction layer I, so that the vibration of the voltage and current of a device can be controlled effectively and the controllability of the access memory is improved.

Description

technical field [0001] The invention relates to a preparation process of a non-volatile memory in a microelectronic device, in particular to a P / N type stacked resistance variable memory with spontaneously growing metal nanocrystal particles. Background technique [0002] With the development of technology, information storage devices are becoming more and more important in life. Traditional memories such as SRAM, DRAM, and FLASH are facing the challenge of insurmountable size limits. At the same time, another new storage concept It is gradually considered to be the development direction of future memory devices - RRAM. [0003] RRAM is a new type of storage concept that represents binary by resistance state. It has non-volatility, small device unit, simple structure, low power consumption, fast erasing and writing speed, many repeatable erasing and erasing cycles, and high compatibility with traditional CMOS manufacturing processes. The advantages are currently being exten...

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Problems solved by technology

[0005] However, there are still some problems at present. First, the nanocrystals prepared in this way are very random, and the number and size of nanocrystals are difficult to control, which leads to the instability of the size and quantity of the conductive channels; secondly, the current preparation of metal The process conditions of nanocrystals are complicated, and the parameters for forming stable metal nanocrystals have not been fully grasped; finally, resistive memory based on the conductive bridge theory or oxygen vacancy theory can reduce power consumption, especially the resistive memory with metal nanocrystals can further reduce Power consumption, improve erase and write speed

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