Silicon on insulator (SOI)-based metal-oxide-semiconductor field-effect transistor (PMOSFET) power device

A power device, N-type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem that the breakdown voltage of the device is very sensitive and is larger than the on-resistance, etc., to improve the breakdown voltage and drift region concentration. , the effect of reducing the on-resistance and reducing the lateral size
CN102969355AInactive Publication Date: 2013-03-13UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2013-03-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a silicon on insulator (SOI)-based metal-oxide-semiconductor field-effect transistor (PMOSFET) power device and belongs to the technical field of power semiconductor devices. An N type SOI rib is adopted for the SOI-based PMOSFET power device so that the SOI-based PMOSFET power device can be integrated with an N channel power device conveniently. Simultaneously, a drift region of the SOI-based PMOSFET power device is formed by injecting a P type well region on the surface of an N type SOI semiconductor layer of the N type SOI rib, and in the reverse blocking state, the electric potential of the N type SOI semiconductor layer is high raised to perform two-dimensional exhausting for the P type drift region to generate a reduced surface electric field (RESURF) effect, accordingly puncture voltage and drift region concentration of the device are effectively improved, and on-resistance is greatly reduced. In addition, the SOI-based PMOSFET power device bears transverse pressure drop through a medium trough, can achieve high puncture voltage with small device transverse size, and accordingly can effectively reduce the transverse size.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductor devices, and relates to SOI (Semiconductor On Insulator, semiconductor on an insulating layer)-based P-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor, Metal-Oxide-Semiconductor Field Effect Transistor) power device. Background technique

[0002] P-channel MOSFET (hereinafter referred to as PMOSFET) is a field effect transistor that uses holes as conduction carriers. Because in silicon semiconductors, the mobility of holes is much smaller than that of electrons, so under the same doping concentration and structure size, the on-resistance of PMOSFET is much greater than that of N-channel MOSFET (hereinafter referred to as NMOSFET). resistance, which makes NMOSFETs more widely used and favored by people. However, because the application of PMOSFET in CMOS integrated circuits can greatly simplify the circuit, PMOSFET is still an irreplaceable and indispensable device. ...

Claims

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