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Manufacturing process of local back surface field

A technology of local back field and preparation process, applied in the direction of sustainable manufacturing/processing, final product manufacturing, electrical components, etc., can solve the problems of increasing equipment and process steps, increasing production costs, etc., to reduce production processes and reduce production costs. Effect

Inactive Publication Date: 2013-03-20
泰州德通电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the process of preparing the back surface passivation battery, femtosecond laser and corrosion slurry are often used to open holes on the back surface passivation film or laser sintering to form a local aluminum back field, which requires additional equipment and processes in actual production steps, which actually increase the cost of production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0017] Clean the silicon wafer for texturing; diffuse the cleaned silicon wafer; remove the back junction of the diffused silicon wafer and polish the back surface; deposit silicon nitride anti-reflection film on the front surface of the back polished silicon wafer, and deposit non- Crystal silicon, silicon nitride composite film, in the process of depositing the film, place a mask plate on the silicon wafer, the mask plate is composed of a superalloy wire with a diameter of 30 μm. Open holes of about 20 μm are formed in the blocked area; aluminum paste is printed on the back surface, silver paste is printed on the front surface, and sintered to form a local back field.

example 2

[0019] Clean the silicon wafer for texturing; diffuse the cleaned silicon wafer; remove the back junction of the diffused silicon wafer and polish the back surface; deposit a silicon nitride anti-reflection film on the front surface of the back polished silicon wafer, and deposit an oxide film on the back Silicon, silicon nitride composite film, in the process of depositing the film, place a mask plate on the silicon wafer, the mask plate is composed of a high-temperature alloy wire with a diameter of 40 μm. Open holes of about 30 μm are formed in the blocked area; aluminum paste is printed on the back surface, silver paste is printed on the front surface, and sintered to form a local back field.

example 3

[0021] Clean the silicon wafer for texturing; diffuse the cleaned silicon wafer; remove the back junction of the diffused silicon wafer and polish the back surface; deposit silicon nitride anti-reflection film on the front surface of the back polished silicon wafer, and deposit non- Crystalline silicon and silicon nitride composite film, in the process of depositing the film, place a mask plate on the silicon wafer, the mask plate is composed of metal foil with a thickness of 30 μm, the metal grid line is an inverted trapezoid, the upper width is 50 μm, and the lower width is 50 μm. is 30 μm. Open holes of about 20 μm are formed in the blocked area; aluminum paste is printed on the back surface, silver paste is printed on the front surface, and sintered to form a local back field.

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PUM

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Abstract

The invention discloses a manufacturing process of a local back surface field, which comprises the following steps of a, washing and conducting texture surface making on a silicon wafer, b, diffusing the washed silicon wafer, c, removing back surface junctions of the diffused silicon wafer and polishing the back surface; d, depositing a silicon nitride anti-reflection film on the front surface of the silicon wafer with the polished back surface, depositing an amorphous silicon film, an aluminum oxide film or a silicon oxide film on the bottom layer of the back surface, and depositing a silicon nitride film on the upper layer, e, printing aluminum paste on the back surface and silver paste on the front surface, and f, forming the local back surface field by sintering. With the adoption of the manufacturing process of the local back surface field, self-opening of a passive film of the back surface field can be realized, production procedures are reduced, and the production cost is lowered.

Description

technical field [0001] The invention relates to a preparation process of a solar cell, in particular to a preparation process of a local back field. Background technique [0002] Reducing the production cost of solar cells and improving the efficiency of solar cells has always been the goal pursued by the solar cell industry. From the perspective of cost reduction, it is necessary to reduce the amount of silicon material used, that is, to reduce the thickness of the silicon wafer. However, as the thickness of the silicon wafer decreases, the influence of the surface state of the silicon wafer on the performance of the cell becomes more important. First, there are a large number of dangling bonds and surface states on the silicon wafer surface. It is necessary to passivate the surface of the silicon wafer to reduce the recombination rate of photogenerated carriers on the surface of the silicon wafer, thereby improving the conversion efficiency of the cell. [0003] For P-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 鲁伟明
Owner 泰州德通电气有限公司
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