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A kind of gan thin film grown on Si substrate and its preparation method and application

A substrate and thin film technology, applied in the field of GaN thin film and its preparation, can solve the problems of visible light absorption reducing LED luminous efficiency, affecting GaN growth quality, epitaxial wafer cracking, etc., achieving excellent electrical and optical properties and low defect density , the effect of reducing production costs

Active Publication Date: 2016-03-23
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the quality of GaN single crystal thin films prepared on Si substrates is not as good as that of sapphire substrates. The main reasons are: 1. The thermal expansion mismatch between Si and GaN is much higher than that of sapphire, which makes epitaxial wafers easier to crack; 2. Si substrates When the bottom meets active N, it is easy to form amorphous Si at the interface x N y , affecting the growth quality of GaN; 3. The absorption of visible light by Si will also greatly reduce the luminous efficiency of LED

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  • A kind of gan thin film grown on Si substrate and its preparation method and application
  • A kind of gan thin film grown on Si substrate and its preparation method and application
  • A kind of gan thin film grown on Si substrate and its preparation method and application

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Embodiment 1

[0029] Please refer to figure 1 , the GaN thin film grown on Si substrate of the present invention comprises Si substrate layer 11, the Al that grows on Si substrate layer 11 2 o 3 Protective layer 12, grown on Al 2 o 3 GaN thin film layer 13 on the protection layer 12.

[0030] The above-mentioned GaN film grown on the Si substrate is obtained by the following methods: select the Si substrate; select the (111) crystal plane of the Si substrate to coat a layer of Al, and then pass through oxygen plasma to form Al 2 o 3 protective layer; again in Al 2 o 3 A GaN film layer is grown on the protection layer. The specific process is as follows:

[0031] (1) Select the Si substrate and select the crystal orientation as the (111) crystal plane.

[0032] (2) Coating a layer of Al on Si(111) by molecular beam epitaxy, at a substrate temperature of 800

[0033] Oxygen plasma is injected at -900℃ to form Al2 o 3 Protective layer, keep warm for 30min.

[0034] (3) Using pulsed...

Embodiment 2

[0041] This embodiment is improved on the basis of Embodiment 1. The difference is that before the Al layer is plated, the Si substrate is first subjected to polishing treatment, surface cleaning treatment, and annealing treatment in sequence. The specific operation method is as follows:

[0042] Polishing treatment: the surface of the Si substrate is polished with diamond, and no scratches are observed on the surface of the Si substrate with an optical microscope, and then the Si substrate is polished by a chemical mechanical polishing method in the prior art.

[0043] Surface cleaning treatment: Put the slot containing the Si substrate into a clean square bottle, add deionized water and prepared acetone until the solution completely immerses the Si substrate, ultrasonic for 5-10 minutes; put the square bottle Put it into the ultrasonic tank, add deionized water until the water level is slightly lower than the square bottle, perform ultrasonic cleaning for 5-10 minutes, and th...

Embodiment 3

[0046] Embodiment 3 Application of the GaN thin film grown on the Si substrate of the present invention in LED devices

[0047] Please refer to image 3 , the GaN film grown on the Si substrate obtained in Example 2 is applied to LED devices, the method is: epitaxial growth of high-quality Al on the Si (111) crystal plane 2 o 3 protective layer, then the Al 2 o 3 GaN single crystal thin film is epitaxially grown on the protective layer, and after GaN single crystal thin film layer 10 is formed, high-quality n-type silicon-doped GaN epitaxial layer 11, In x Ga 1-x N multi-quantum well layer 12, p-type magnesium-doped GaN layer 13, to obtain electrical components containing GaN thin films grown on Si substrates, the specific process is as follows:

[0048] An n-type silicon-doped GaN epitaxial layer 11 is grown on the GaN single crystal thin film layer 10, its thickness is about 5 μm, and its carrier concentration is 1×10 19 cm -3 . Then grow In x Ga 1-x The N multi-qu...

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Abstract

The invention discloses a GaN film developed on a silicon (Si) substrate. The GaN film on the Si substrate comprises a Si substrate layer, an aluminum oxide (Al2O3) protective layer developed on the Si substrate layer and a GaN film layer developed on the Al2O3 protective layer. A preparation method of the GaN film developed on the Si substrate comprises a first step of selecting the Si substrate, a second step of plating an selected aluminum (Al)layer on a crystal face(111) of the Si substrate, a third step of guiding oxygen and other plasmas to form the Al203 protective layer, and a fourth step of developing the GaN film layer on the Al2O3 protective layer. The GaN film is low in defect concentration, high in crystalline quality, good in electricity and optical properties and suitable for being applied to a light-emitting device (LED) device and a solar cell.

Description

technical field [0001] The invention relates to the field of GaN thin films, in particular to a GaN thin film grown on a Si substrate and its preparation method and application. Background technique [0002] Group III gallium nitride multi-system materials are semiconductor materials with direct bandgap, the bandgap can be continuously adjusted from 0.7eV to 6.2eV, and the color covers from infrared to ultraviolet wavelengths. It is used in optoelectronics such as blue, green, and ultraviolet light-emitting diodes (LED ), short-wavelength laser diodes (LD), ultraviolet detectors, Bragg reflection waveguides, etc. have important applications and developments. In addition, as one of the representatives of the third-generation semiconductor materials, GaN has excellent properties such as direct band gap, wide band gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity, and excellent physical and chemical stability. It is widely...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L33/32H01L31/0352
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD