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OLED (Organic Light Emitting Diode) device working under low voltage

A low-voltage, device technology, applied in the field of OLED devices, can solve the problems of device driving voltage increase, restricted mobility, etc.

Active Publication Date: 2013-04-17
KUNSHAN VISIONOX DISPLAY TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the hole transport part can be doped with P, so that the layer has a relatively high mobility (about 1x10 -5 Room 1x10 -2 cm / Vs), while the electron transport layer is limited by its mobility, and the increase in thickness often leads to an increase in the driving voltage of the device

Method used

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  • OLED (Organic Light Emitting Diode) device working under low voltage
  • OLED (Organic Light Emitting Diode) device working under low voltage
  • OLED (Organic Light Emitting Diode) device working under low voltage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] see image 3 The partial structural diagram of the inverted OLED device of the shown embodiment 1, embodiment 1 is a kind of green light-emitting device, adopts ITO as cathode, Alq 3 Doped cesium carbonate (cesium obtained by thermal decomposition) as electron injection layer, Alq 3 As the electron transport layer, AND doped C545T as the green light-emitting layer; NPB as the hole transport layer; HAT-cn as the hole injection layer. Alq 3 As an electron transport layer; LiF as an electron injection layer; Al as a metal anode layer. The device structure of this embodiment is as follows:

[0071] ITO / Alq 3 :10%Cs 2 CO 3 (20nm) / Alq 3 (5nm) / ADN: 2%C545T(30nm) / NPB(10nm) / HAT-cn(20nm) / Al(150nm) (1).

[0072] The specific preparation method for preparing the organic electroluminescent device with the above structural formula (1) is as follows:

[0073] The glass substrate was cleaned by detergent ultrasonic and deionized water ultrasonic, and dried under an infrared la...

Embodiment 2

[0090] Example 2 (see Figure 7 ):

[0091] Embodiment 2 is a blue light-emitting device of the present invention, using ITO as the cathode, Alq 3 Doped cesium carbonate (cesium obtained by thermal decomposition) as electron injection layer, Alq 3 As the electron transport layer, AND doped TBPe as the blue light-emitting layer; NPB as the hole transport layer; HAT-cn as the hole injection layer. Alq 3As an electron transport layer; LiF as an electron injection layer; Al as a metal anode layer. The device structure of this embodiment is as follows:

[0092] ITO / Alq 3 :10%Cs 2 CO 3 (20nm) / Alq 3 (5nm) / ADN:3%TBPe(30nm) / NPB(10nm) / HAT-cn(20nm) / Al(150nm) (2)

[0093] The preparation process of Example 2 is: using dual-source evaporation to prepare an AND and TBPe doped layer with a thickness of 30 nm and a TBPe doping ratio of 3%.

[0094] Evaporate 10nm thick NPB as a hole injection layer, and cover 20nm HAT-cn as a hole injection layer. Finally, 150 nm of Al was vapor-de...

Embodiment 3

[0104] Embodiment 3 (see Figure 11 ):

[0105] Embodiment 3 is a blue light-emitting device of the present invention, using ITO as the cathode, Alq 3 Doped cesium carbonate (cesium obtained by thermal decomposition) as electron injection layer, Alq 3 As the electron transport layer, AND doped TBPe as the blue light-emitting layer; NPB as the hole transport layer; HAT-cn as the hole injection layer. Alq 3 As an electron transport layer; LiF as an electron injection layer; Al as a metal anode layer. The device structure of this embodiment is as follows:

[0106] ITO / Alq 3 :10%Cs 2 CO 3 (20nm) / Alq 3 (5nm) / ADN: 3%TBPe(30nm) / NPB(20nm) / HAT-cn(20nm) / NPB(20nm) / HAT-cn(70nm) / Al(150n) (3).

[0107] The preparation process of Example 3 is: using dual-source evaporation to prepare an AND and TBPe doped layer with a thickness of 30 nm and a TBPe doping ratio of 3%.

[0108] Evaporate 20nm thick NPB as the hole injection layer, and at the same time cover 20nm HAT-cn as the hole in...

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PUM

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Abstract

The invention discloses an OLED (Organic Light Emitting Diode) device working under a low voltage, which comprises a charge transport layer. The charge transport layer comprises an electronic transport layer and a hole transport layer; the charge transport layer is formed by a plurality of layers of structures comprising a charge compounding interface and a charge separation interface; the thickness of each layer of structure in all layers of structures of the charge transport layer is less than the coulomb capture radius of charges. According to the OLED device working under the low voltage, which is disclosed by the invention, the charge transport layer adopts a plurality of layers of structures; the charge compounding interface and the charge separation interface are formed among all the layers of structures; and between the charge compounding interface and the charge separation interface, due to the action of a coulomb force of the charges, the transport capacity of the charges is very strong, so that charge transport is promoted. In the OLED device working under the low voltage, which is disclosed by the invention, the charge transport layer has very high charge transfer rate (1*10<-3> to 1*10<-1>cm / Vs) and the working voltage of the device can be effectively reduced.

Description

technical field [0001] The invention relates to an OLED device, in particular to an OLED device with a relatively low operating voltage. Background technique [0002] Organic electroluminescent devices have attracted widespread attention due to their thin body, large area, full curing, and flexibility. research hotspot. [0003] As early as the 1950s, Bernanose.A et al. started research on organic electroluminescent devices (OLEDs). The material initially studied was an anthracene single wafer. Due to the problem of the large thickness of a single wafer, the required driving voltage is very high. Until 1987, Deng Qingyun (C.W.Tang) and Vanslyke of Eastman Kodak (Eastman Kodak) in the United States reported that the structure was: ITO / Diamine / Alq 3 / Mg:Ag organic small molecule electroluminescence device, the brightness of the device can reach 1000cd / m2 at a working voltage of 10 volts 2 , the external quantum efficiency reaches 1.0%. The study of electroluminescence ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
Inventor 邱勇张国辉段炼董艳波
Owner KUNSHAN VISIONOX DISPLAY TECH
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