Polishing pad cleaning solution and use method thereof

Abstract

The invention discloses a polishing pad cleaning solution and a use method thereof, and belongs to the field of silicon wafer polishing pad cleaning technology. The cleaning solution comprises a polyoxyethylene ether non-ionic surface active agent, a cleaning addition agent, a blocking prevention agent, a solubilizing agent, a wetting agent and a PH (potential of hydrogen) conditioning agent, and the pH value of the cleaning solution ranges from 8.0 to 10.0. In a circularly polishing process, after the polishing, the polishing pad cleaning solution is diluted for 20-40 times, and then a polishing pad is scrubbed with a flow rate of 5L/min (maximum flow) for 1 min. With the adoption of the cleaning solution and the cleaning method, residual fouling and ion residues accumulated on the polishing pad in the circularly polishing process can be effectively removed, so that the moisture retention of the polishing pad can be increased, and the service life of the polishing pad is prolonged. The cleaning solution can be recycled, the price and the cost are low, and the cleaning solution has the advantages of simple processing, controllability and the like when used in cleaning.

Description

technical field [0001] The invention relates to a polishing pad cleaning liquid and a method for using the same, belonging to the technical field of silicon wafer polishing pad cleaning, in particular to the technical field of a polishing pad cleaning liquid used for silicon wafer circular polishing. Background technique [0002] Semiconductor materials, mainly silicon materials, are the most important basic functional materials in the electronic information industry, and occupy a very important position in the national economy and military industry. More than 95% of the world's semiconductor devices are made of silicon materials, and 85% of integrated circuits are also made of silicon materials. Obtaining silicon wafers with higher surface processing precision is an important link in the manufacture of integrated circuits, which is directly related to the pass rate of integrated circuits. Using chemical mechanical polishing (CMP) technology to planarize the surface of semi...

AI Technical Summary

Problems solved by technology

However, during the recycling process of the polishing liquid, it will cause the accumulation of polishing products and harmful ions in the polishing liquid, and these accumulations will be continuously deposited on the polishing pad

With continuous polishing cycles, residues that accumulate on the pad can clog the pores of the pad, resulting in a decrease in dethickness rate

In severe cases, lumps will form and cover the surface of the polishing pad, resulting in deformation of the silicon wafer surface after polishing, resulting in defects such as corrosion and scratches

In addition, the metal ions deposited on the surface of the polishing pad will be adsorbed on the surface of the silicon wafer, making subsequent cleaning difficult

Usually, the polishing pad is scrubbed with deionized water for 1 to 2 minutes after each polishing, which can slow down the accumulation of residues, but the effect is very limited

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