Photoresist residue and polymer residue removing liquid composition

Abstract

Provided are a photoresist residue and polymer residue removing liquid composition, and a method of removing the residue used therewith, for removing photoresist residue and polymer residue produced during a process of manufacturing a semiconductor circuit element having metallic wiring. Specifically, the composition does not contain nitrogen-containing organic hydroxyl compounds, ammonia or fluorine compounds, and contains an aliphatic polycarboxylic acid having a melting point of 25 DEG C or higher with an excellent residue removing property and having a metallic oxide main component as the residue removing component. The photoresist residue and polymer residue removing liquid composition, and the method of removing the residue used therewith, is capable of preventing the aliphatic polycarboxylic acid from being recrystallized by evaporation of water after a solution has adhered around a cleaning device liquid ejecting nozzle or a cleaning tank and a chamber. In the photoresist residue and polymer residue removing liquid composition containing the aliphatic polycarboxylic acid with a melting point of 25 DEG C or higher, the removing liquid contains an organic solvent that is miscible with water and has a vapor pressure of 17 mm Hg or less at 20 DEG C and a hydroxyl group within the structure.

Description

technical field [0001] The present invention relates to a composition for removing photoresist residue and polymer residue remaining after dry etching and ashing in a manufacturing process of a semiconductor circuit element having metal wiring, and a method for removing residue using the composition. Background technique [0002] In recent years, semiconductor circuit components have been developing toward miniaturization and high integration. Accordingly, the miniaturization of the component structure is required, and new wiring materials or interlayer insulating film materials have been used. Copper and copper alloys with copper as the main component are used as wiring materials, organic materials representing low dielectric constant (Low-k) aryl ether compounds are used as interlayer insulating film materials, and methyl groups are introduced into the silicon dioxide film. (-CH 3 ) of SiOCH 3 class material. In addition, Low-k materials are constantly being made more p...

AI Technical Summary

Problems solved by technology

[0028] However, these aliphatic polyhydric carboxylic acids have a high melting point and are solid at room temperature. When used in a one-piece cleaning device, there is a problem that when the nozzle for ejecting the liquid or the ejected liquid is scattered and adhered to the chamber and placed When the water evaporates and dissolves, the aliphatic polycarboxylic acid recrystallizes, and the crystals adhere to the surface of the cleaned wafer to produce reverse contamination

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