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A kind of method for preparing GAAS film material

A thin-film material and thin-film technology, applied in the field of preparing GaAs thin-film materials, can solve problems such as the difficulty of using the Czochralski method, and achieve the effects of short preparation cycle, simple raw materials, and strong adaptability

Active Publication Date: 2014-10-29
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Single crystals of GaAs can be manufactured using Horizontal Bridgeman (HB) technology. Because of the mechanical properties of GaAs, the Czochralski method is difficult to apply to the preparation of GaAs materials.

Method used

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  • A kind of method for preparing GAAS film material
  • A kind of method for preparing GAAS film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Accurately weigh Ga with one ten thousandth electronic balance 2 o 3 , As 2 o 3 , activated carbon C, uniformly mixed and ground according to the ratio of molar ratio Ga / As / C=1.0 / 1.2 / 6.0, because As is easy to sublimate, the proportion of As is slightly excessive, add absolute ethanol equivalent to 50% of the mass of solid raw materials, and grind carefully After uniformity, use a pressure of 10MPa to press it into a disc with a thickness of 3mm, then place it in the corundum crucible of the reactor, and use high-purity nitrogen to evacuate and replace the oxygen concentration to the ppm level, and then use Ar+H 2 Mixed gas (including H 2 The volume percentage is 10%) vacuum replacement once, the substrate required for deposition is pre-placed in the designated position in the reactor after treatment, and then vacuumed to 7Pa, the temperature rise rate is controlled at 5°C / min, and the temperature is raised to the reaction zone 1200°C, 600°C in the deposition area, ...

Embodiment 2

[0033] Accurately weigh Ga with one ten thousandth electronic balance 2 o 3 , As 2 o 3 , activated carbon C, uniformly mixed and ground according to the ratio of molar ratio Ga / As / C=1.0 / 1.0 / 6.0, adding absolute ethanol equivalent to 100% of the solid raw material mass, after careful grinding, press it into Thickness is 10mm square piece, then place it in the reactor, use high-purity nitrogen to evacuate to replace the oxygen concentration to the ppm level, and then use Ar+H 2 Mixed gas (including H 2 The volume percentage is 30%) and replaced twice by vacuuming, and the substrate required for deposition is processed and placed in a designated position in the reactor in advance. Then evacuate to about 1mmHg, control the temperature rise rate at 5-10°C / min, start electric heating and heat up to 1300°C in the reaction zone, and 800°C in the deposition area. When the temperature in the reaction zone reaches the predetermined temperature, turn on the substrate rotation device u...

Embodiment 3

[0036] Accurately Weighing Ga with 1 / 10000 Electronic Analytical Balance 2 o 3 , As 2 o 3 or As 2 o 5 , activated carbon C, uniformly mixed and ground according to the ratio of molar ratio Ga / As / C=1.0 / 1.2 / 8.0, adding absolute ethanol equivalent to 65% of the solid raw material mass, carefully ground it evenly, and pressed it with a pressure of 12MPa A disc with a thickness of 8mm is then placed in the reactor, evacuated with high-purity nitrogen to replace the oxygen concentration at the ppm level, and then filled with Ar+H 2 Mixed gas (including H 2 The volume percentage is 25%) and replaced twice by vacuuming. After the substrate required for deposition is processed, it is pre-placed in the designated position in the reactor, and then vacuumed to about 7Pa. The temperature rise rate is controlled at 8°C / min, and the heating is started until the reaction The zone is 1210°C, and the temperature of the deposition zone is controlled at 700°C. When the temperature of the re...

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Abstract

The invention discloses a method of preparing a GaAs thin-film material. The method comprises steps as follows: using Ga 203, As 203 and activated carbon C as raw materials; adding absolute ethyl alcohol corresponding to 50-100% of solid raw materials in weight; after grinding the materials uniformly, using 10-15 MPa of pressure to press the materials into a sheet with thickness of 1-10 mm; then placing the sheet in a reactor corundum crucible; vacuumizing with high-purity nitrogen; permuting the reactor corundum crucible until oxygen concentration reaches a ppm level; then using mixed gas to vacuumize and permute the reactor corundum crucible once or twice; vacuumizing to 7-13 Pa; controlling a rate of temperature increase to be within a range of 5-10 DEG C per minute; heating a reaction zone until the temperature of the reaction zone rises to a range of 1200-1250 DEG C; heating a sediment zone until the temperature of the sediment zone rises to a range of 600-800 DEG C; keeping the temperature constant for 3-4 hours when vacuum degree is kept no less than minus 0.08 MPa; cooling naturally until the temperature drops to the room temperature after the temperature of the reaction zone reaches a predetermined temperature; and obtaining a grey black GaAs thin film after filling the reactor corundum crucible with the mixed gas. According to the method of preparing the GaAs thin-film material, used raw materials are simple, low in price, and easy to obtain, and the raw materials are either solid or non-toxic gas, are free from polluting the environment, and do not threat the safety of an operator.

Description

technical field [0001] The invention relates to the field of thin film material manufacture, in particular to a method for preparing GaAs thin film material. Background technique [0002] Gallium arsenide (GaAs) is an artificially synthesized semiconductor material composed of Group IIIA element Ga and Group VA element As. The molecular formula is GaAs. The band gap at room temperature is 1.42eV, GaAs belongs to the zinc blende lattice structure, and the lattice constant is 5.65×10 -10 m, and indium phosphide (InP) belong to the direct transition energy band structure. Gallium arsenide is a dark gray solid with a melting point of 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. [0003] Gallium arsenide is a semiconductor material with many advantages. Gallium arsenide entered the substantive application stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/24C30B23/02C30B29/42
Inventor 刘兴泉张铭菊
Owner CHANGZHOUSR SEA ELECTRONICS
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