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30results about How to "No security threat" patented technology

Channel self-adaptive method of quantum key distribution system and QKD (quantum key distribution) system based on channel self-adaptive method

The invention provides a channel self-adaptive method of a quantum key distribution system. The channel self-adaptive method comprises the following steps: at an initialization stage of the system, reducing attenuation, caused by a sending end, to signal light; increasing exit light intensity of the signal light; starting a system initialization process comprising delaying scanning and polarization feedback, so that the system initialization process is finished; after the system initialization process is finished, recovering the attenuation to the signal light to a single photon level corresponding to a default attenuation value; starting a quantum key generation process. The invention further provides a QKD (quantum key distribution) system based on the channel self-adaptive method of the quantum key distribution system. The channel self-adaptive method of the quantum key distribution system has the advantages that automatic estimation and channel attenuation compensation are carried out at the system initialization stage,, so that a method for properly increasing the signal light intensity is realized, the system initialization process can be smoothly finished, and the QKD process can be rapidly and effectively established. The method is good for networking operation of the QKD system, the working efficiency of the QKD system is improved, the operation stability and reliability are improved, and the whole performance of a QKD network is improved.
Owner:QUANTUMCTEK

Synergistic self-resistance electric heating type plate auto-increment spinning forming device and method

PendingCN108555103ASolving Spinning DifficultiesSimple structureShaping toolsLow voltageEngineering
The invention provides a synergistic self-resistance electric heating type plate auto-increment spinning forming device and method. The synergistic self-resistance electric heating type plate auto-increment spinning forming device comprises a spinning wheel, a high-frequency low-voltage power source, a high-temperature insulated spacer, a cable, a resistor rod, an infrared thermometer, a plate, acarbon brush and a fixing frame of the carbon brush. The spinning wheel and the resistor rod are located on the same arc surface of the plate and are symmetrically distributed (the spinning wheel andthe resistor rod are separated by 180 degrees), the spinning wheel and the resistor rod synergistically act to complete the heating and forming process. The synergistic self-resistance electric heating type plate auto-increment spinning forming device is compact in structure, the synergistic self-resistance electric heating type plate auto-increment spinning forming method is simple, the heating and formation problems of the material which is high in strength at normal temperature, large in forming force and difficult to deform are solved, and the synergistic self-resistance electric heating type plate auto-increment spinning forming method is suitable for auto-increment spinning formation of pure titanium plate materials, titanium alloy plate materials, magnesium alloy plate materials andthe like.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Method of preparing GaAs thin-film material

The invention discloses a method of preparing a GaAs thin-film material. The method comprises steps as follows: using Ga 203, As 203 and activated carbon C as raw materials; adding absolute ethyl alcohol corresponding to 50-100% of solid raw materials in weight; after grinding the materials uniformly, using 10-15 MPa of pressure to press the materials into a sheet with thickness of 1-10 mm; then placing the sheet in a reactor corundum crucible; vacuumizing with high-purity nitrogen; permuting the reactor corundum crucible until oxygen concentration reaches a ppm level; then using mixed gas to vacuumize and permute the reactor corundum crucible once or twice; vacuumizing to 7-13 Pa; controlling a rate of temperature increase to be within a range of 5-10 DEG C per minute; heating a reaction zone until the temperature of the reaction zone rises to a range of 1200-1250 DEG C; heating a sediment zone until the temperature of the sediment zone rises to a range of 600-800 DEG C; keeping the temperature constant for 3-4 hours when vacuum degree is kept no less than minus 0.08 MPa; cooling naturally until the temperature drops to the room temperature after the temperature of the reaction zone reaches a predetermined temperature; and obtaining a grey black GaAs thin film after filling the reactor corundum crucible with the mixed gas. According to the method of preparing the GaAs thin-film material, used raw materials are simple, low in price, and easy to obtain, and the raw materials are either solid or non-toxic gas, are free from polluting the environment, and do not threat the safety of an operator.
Owner:CHANGZHOUSR SEA ELECTRONICS

Induction coil cooling pressure-bearing system for induction heating equipment

The invention discloses an induction coil cooling pressure-bearing system for induction heating equipment, comprising a pressure vessel and a heating induction coil. The heating induction coil penetrates through the pressure vessel, and comprises an inner coil section located in the pressure vessel and an outer coil section located outside the pressure vessel. The outer coil section comprises an exhaust coil section and an intake coil section. A cooling medium is arranged in the heating induction coil, and the cooling medium is a gas which is the same with or similar to the pressurized gas ofthe pressure vessel. The induction coil cooling pressure-bearing system for induction heating equipment further comprises a first air pressure detection pipeline connected with the exhaust coil section and a second air pressure detection pipeline connected with the pressure vessel, and the first air pressure detection pipeline is connected with the second air pressure detection pipeline through adifferential pressure gauge. The induction coil cooling pressure-bearing system for induction heating equipment is disclosed in order to solve the technical problem that the induction heating in the prior art can be hardly applied to high-pressure and ultrahigh-pressure equipment and is of poor safety.
Owner:BEIJING POWER MACHINERY INST +2

Channel adaptive method of quantum key distribution system and qkd system based on it

The invention provides a channel self-adaptive method of a quantum key distribution system. The channel self-adaptive method comprises the following steps: at an initialization stage of the system, reducing attenuation, caused by a sending end, to signal light; increasing exit light intensity of the signal light; starting a system initialization process comprising delaying scanning and polarization feedback, so that the system initialization process is finished; after the system initialization process is finished, recovering the attenuation to the signal light to a single photon level corresponding to a default attenuation value; starting a quantum key generation process. The invention further provides a QKD (quantum key distribution) system based on the channel self-adaptive method of the quantum key distribution system. The channel self-adaptive method of the quantum key distribution system has the advantages that automatic estimation and channel attenuation compensation are carried out at the system initialization stage,, so that a method for properly increasing the signal light intensity is realized, the system initialization process can be smoothly finished, and the QKD process can be rapidly and effectively established. The method is good for networking operation of the QKD system, the working efficiency of the QKD system is improved, the operation stability and reliability are improved, and the whole performance of a QKD network is improved.
Owner:QUANTUMCTEK

Device for solving waste blockage on through hole in metal material drilling process

The invention relates to the technical field of metal material machining, and discloses a device for solving waste blockage on a through hole in a metal material drilling process. The device for solving waste blockage on the through hole in the metal material drilling process comprises a device main body, wherein a collecting barrel is fixedly installed on a bottom plate, a friction plate is arranged in the collecting barrel, and fixedly connected with a telescopic column, and the telescopic column is fixedly connected with a first spring; a telescopic rod is arranged in the device main body,a cylinder is fixedly connected below the telescopic rod, and the upper portion of the telescopic rod is fixedly connected with the first spring on the telescopic column. According to the device, thetelescopic rod can rotate when moving upwards, when the friction plate at the upper end of the telescopic rod makes contact with crushed materials in the through hole, the friction plate extrudes anddrives the telescopic rod to contract towards the inner side, the telescopic rod compresses the first spring and drives the friction plate to move, and when the friction plate moves upwards and rotates, the crushed materials in the through hole are removed; and through the structure, the purpose of mechanically removing chippings from the machined through hole is realized, and compared with manualworking, higher mechanical removing efficiency and safety are achieved.
Owner:崔晶晶

Device and method for measuring collision process in laser shock high-speed forming of plate

ActiveCN111331026AEasy to measureCollisions cannot be observedMetal working apparatusVoltage pulseThin membrane
The invention discloses a device and a method for measuring a collision process in laser shock high-speed forming of a plate, and belongs to the technical field of measurement. The device comprises alaser forming system and a measuring system, wherein the laser forming system comprises optical glass, a laser, an absorption layer, a metal sheet, a metal round bar, a barrier film, insulating paperand a female die. The method comprises the following steps of: firstly, enabling a metal die not to be in direct contact with the metal sheet and the metal round bar by adopting the insulating paper and the barrier film; correspondingly connecting the metal sheet and the metal round bar with a positive electrode and a negative electrode of a power supply; enabling the metal sheet to be in contactwith the metal round bar after being subjected to laser shock deformation; and conducting a measuring loop, wherein the number of generated voltage pulse signals is the collision frequency of the metal sheet moving at a high speed and the metal die, and the width of voltage pulses is the collision contact time. According to the method and the device, the collision process in laser shock high-speedforming of the plate can be accurately measured. The device has potential market application prospects.
Owner:ANHUI UNIVERSITY OF TECHNOLOGY

A kind of method for preparing GAAS film material

The invention discloses a method of preparing a GaAs thin-film material. The method comprises steps as follows: using Ga 203, As 203 and activated carbon C as raw materials; adding absolute ethyl alcohol corresponding to 50-100% of solid raw materials in weight; after grinding the materials uniformly, using 10-15 MPa of pressure to press the materials into a sheet with thickness of 1-10 mm; then placing the sheet in a reactor corundum crucible; vacuumizing with high-purity nitrogen; permuting the reactor corundum crucible until oxygen concentration reaches a ppm level; then using mixed gas to vacuumize and permute the reactor corundum crucible once or twice; vacuumizing to 7-13 Pa; controlling a rate of temperature increase to be within a range of 5-10 DEG C per minute; heating a reaction zone until the temperature of the reaction zone rises to a range of 1200-1250 DEG C; heating a sediment zone until the temperature of the sediment zone rises to a range of 600-800 DEG C; keeping the temperature constant for 3-4 hours when vacuum degree is kept no less than minus 0.08 MPa; cooling naturally until the temperature drops to the room temperature after the temperature of the reaction zone reaches a predetermined temperature; and obtaining a grey black GaAs thin film after filling the reactor corundum crucible with the mixed gas. According to the method of preparing the GaAs thin-film material, used raw materials are simple, low in price, and easy to obtain, and the raw materials are either solid or non-toxic gas, are free from polluting the environment, and do not threat the safety of an operator.
Owner:CHANGZHOUSR SEA ELECTRONICS
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