The invention discloses a method of preparing a GaAs thin-
film material. The method comprises steps as follows: using Ga 203, As 203 and
activated carbon C as raw materials; adding absolute ethyl
alcohol corresponding to 50-100% of
solid raw materials in weight; after
grinding the materials uniformly, using 10-15 MPa of pressure to press the materials into a sheet with thickness of 1-10 mm; then placing the sheet in a reactor
corundum crucible; vacuumizing with high-purity
nitrogen; permuting the reactor
corundum crucible until
oxygen concentration reaches a ppm level; then using
mixed gas to vacuumize and permute the reactor
corundum crucible once or twice; vacuumizing to 7-13 Pa; controlling a rate of temperature increase to be within a range of 5-10 DEG C per minute; heating a
reaction zone until the temperature of the
reaction zone rises to a range of 1200-1250 DEG C; heating a
sediment zone until the temperature of the
sediment zone rises to a range of 600-800 DEG C; keeping the temperature constant for 3-4 hours when vacuum degree is kept no less than minus 0.08 MPa; cooling naturally until the temperature drops to the
room temperature after the temperature of the
reaction zone reaches a predetermined temperature; and obtaining a grey black GaAs thin film after filling the reactor corundum crucible with the
mixed gas. According to the method of preparing the GaAs thin-
film material, used raw materials are simple, low in price, and easy to obtain, and the raw materials are either
solid or non-
toxic gas, are free from polluting the environment, and do not
threat the safety of an operator.