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Preparation method of film material for compound semiconductor

A technology of thin film materials and semiconductors, applied in the field of thin film material manufacturing, to achieve the effects of good crystallinity, low preparation temperature and simple preparation equipment

Inactive Publication Date: 2015-04-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Si is an indirect bandgap material and can only emit very weak light

Method used

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  • Preparation method of film material for compound semiconductor
  • Preparation method of film material for compound semiconductor
  • Preparation method of film material for compound semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Method and process for preparing GaP by two-step method

[0071] The method for preparing GaP thin film material, comprises the following steps:

[0072] Step 1. Accurately weigh Ga with a ten-thousandth electronic analytical balance 2 o 3 , P 2 o 5 , according to the molar ratio Ga / P=1.0 / 1.0, mix and grind evenly, add anhydrous ethanol equivalent to 50% of the solid raw material mass, grind again carefully, remove the solvent by drying, and press it into a thickness with a pressure of 12MPa Then seal it in a vacuum ampoule, place the ampoule in the corundum crucible of the reactor, heat it to 500°C in a tube electric furnace, keep the temperature for 2h, and get GaPO after natural cooling. 4 Solid material, confirmed by XRD diffraction analysis results;

[0073] Step 2. Break the ampoule and place GaPO 4 In the reaction zone of the vertical gradient condensation thin film deposition device, the substrate is placed at the designated position in the deposition area...

Embodiment 2

[0076] Method and process for preparing GaP by one-step method

[0077] Accurately Weighing Ga with 1 / 10000 Electronic Analytical Balance 2 o 3 , P 2 o 5 , activated carbon C, uniformly mixed and ground according to the ratio of molar ratio Ga:P:C=1.0:1.0:8.0, adding anhydrous ethanol equivalent to 50% of the solid raw material mass, carefully grinding it evenly, and pressing it with a pressure of 10MPa A disc with a thickness of 1mm is then placed in the corundum crucible of the reactor, vacuumed and replaced with high-purity nitrogen to an oxygen concentration above the ppm level, and then Ar+H 2 Mixed gas (including H 2 The volume percentage is 10%) and replaced once by vacuuming. After the substrate required for deposition is processed, it is pre-placed in the designated position in the reactor, and then vacuumed to about 1mmHg. The heating rate is controlled at 5°C / min, and the heating is started until the reaction Zone 1200°C, deposition zone 600°C, turn on the subs...

Embodiment 3

[0080] Method and process for preparing InP by two-step method

[0081] The method for preparing GaP thin film material, comprises the following steps:

[0082] Step 1. Accurately weigh In with a ten-thousandth electronic analytical balance 2 o 3 , P 2 o 5 , according to the molar ratio In: P = 1.0: 1.0 ~ 1.5, mix and grind evenly, add anhydrous ethanol equivalent to 50% ~ 100% of the solid raw material quality, grind again carefully, remove the solvent by drying, and use 10 ~ 15MPa Press it into a disc with a thickness of 3mm, then seal it in a vacuum ampoule, place the ampoule in the corundum crucible of the reactor, and heat it to 500°C to 600°C in a self-made tube electric furnace. Constant temperature for 2 to 4 hours, natural cooling, that is, InPO 4 solid material;

[0083] Step 2. Break the ampoule, put the InPO 4 The solid material is placed in the reaction zone of the vertical gradient condensation thin film deposition device, and replaced with high-purity nit...

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Abstract

The invention relates to a preparation method of a film material for a compound semiconductor. A target film material for the compound semiconductor can be prepared by a one-step method disclosed by the invention on a large scale. A plurality of films can be prepared one time; the preparation method is short in preparation cycle, high in preparation efficiency, and high in adaptability on a substrate (chip) material; the substrate (chip) does not need to be particularly treated, so that the preparation cost is low; the film material for the compound semiconductor prepared by a two-step method is high in purity and good in crystallinity; a sealing system is adopted in the preparation process, so that loss of raw materials caused by sublimation is avoided; the method is high in controllability; and the preparation temperature is relatively low, so that the energy consumption is reduced.

Description

technical field [0001] The invention relates to the field of thin film material manufacturing, in particular to a preparation composed of Ga δ In 1-δ P y As 1-y [0≤δ≤1,0≤y≤1] compound semiconductor thin film preparation method. Background technique [0002] Gallium arsenide (GaAs) is a synthetic compound semiconductor material with a band gap of 1.42eV at room temperature. GaAs is a sphalerite lattice structure with a lattice constant of 5.65×10 -10 m, and indium phosphide (InP) belong to the direct transition energy band structure. Gallium arsenide is a dark gray solid with a melting point of 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. [0003] Gallium arsenide is a semiconductor material with many advantages. Gallium arsenide entered the substantive application stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30
CPCC23C14/06C23C14/24C23C16/30C23C16/44C23C16/301
Inventor 刘兴泉刘一町张铭菊张峥赵红远何永成张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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