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A preparation method of copper indium aluminum selenide (cias) thin film with energy band gradient distribution

A copper indium aluminum selenide, gradient distribution technology, applied in final product manufacturing, sustainable manufacturing/processing, electrical components, etc. The effect of promoting absorption and utilization, improving energy band distribution, and reducing manufacturing cost

Active Publication Date: 2017-07-18
徐东
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiment of the present invention is to provide a method for preparing a copper indium aluminum selenide (CIAS) thin film with energy band gradient distribution, aiming to solve the problem of complex operation, high cost, low purity, thin film density and adhesion in the prior art. poor, and low photoelectric conversion

Method used

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preparation example Construction

[0013] An embodiment of the present invention provides a method for preparing a solution of a copper indium aluminum selenium thin film with energy band gradient distribution, comprising the following steps:

[0014] S01. Synthesizing copper indium aluminum sulfur nanoparticles: mixing copper source compounds, aluminum source compounds, indium source compounds, sulfur sources and oleylamine to synthesize copper indium aluminum sulfur nanoparticles;

[0015] S02. Prepare copper indium aluminum sulfur nanocrystalline ink: disperse the copper indium aluminum sulfur nanoparticles in an organic solvent to prepare copper indium aluminum sulfur nanocrystalline ink;

[0016] S03. Coating the copper indium aluminum sulfur nano-ink on the double-layer Mo-coated substrate to form a prefabricated film of copper indium aluminum selenium precursor, wherein, the double-layer Mo-coated substrate is deposited with pure Mo layer and The substrate of the Mo layer doped with aluminum;

[0017] S...

Embodiment 1

[0031] (1) Preparation of copper indium aluminum sulfur nanoparticles: add 2.0mmol cuprous chloride, 1.70mmol indium trichloride, 0.30mmol aluminum trichloride and 6.0mmol sulfur powder into a 100mL three-necked bottle, then add 35mL oleylamine , and put it into a temperature-controlled heating jacket, and then connect it to the Shrek ventilation device and heat it up. At the same time, the reaction solution was circulated and scrubbed twice by means of vacuum and argon atmosphere circulation, and each scrubbing was 15 minutes. Finally the reaction vessel was filled with argon. Under magnetic stirring, continue heating, when the temperature rises to 220° C., keep it constant, and stop the reaction after 60 minutes. After cooling to room temperature, the centrifuged reaction solution was filtered to obtain a solid product, and washed five times with ethanol and hexane to obtain a clean solid product.

[0032] (2) Preparation of copper indium aluminum sulfur nanocrystalline in...

Embodiment 2

[0036] (1) Preparation of copper indium aluminum sulfur nanoparticles: add 2.0mmol cuprous chloride, 1.70mmol indium trichloride, 0.30mmol aluminum trichloride and 4.0mmol sulfur powder into a 100mL three-necked bottle, then add 35mL oleylamine , and put it into a temperature-controlled heating jacket, and then connect it to the Shrek ventilation device and heat it up. At the same time, the reaction solution was circulated and scrubbed twice by means of vacuum and argon atmosphere circulation, and each scrubbing was 15 minutes. Finally the reaction vessel was filled with argon. Under magnetic stirring, continue heating, when the temperature rises to 190° C., keep it constant, and stop the reaction after 60 min. After cooling to room temperature, the centrifuged reaction solution was filtered to obtain a solid product, and washed five times with ethanol and hexane to obtain a clean solid product.

[0037] (2) Preparation of copper indium aluminum sulfur nanocrystalline ink: p...

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Abstract

The invention is applied to the technical field of photovoltaic new energy resource materials, and provides a preparation method of a copper indium aluminum selenium membrane with energy band gradient distribution. The method comprises the following steps that copper indium aluminum selenium nano particles are synthesized, copper indium aluminum selenium nanocrystalline ink is prepared, a copper indium aluminum selenium precursor prefabricated membrane is prepared, and the copper indium aluminum selenium membrane is prepared. The preparation method is simple in process, convenient to operate, low in cost and capable of preparing a large-area uniform membrane layer, and promotes the improvement of the conversion rate of a solar thin-film battery.

Description

technical field [0001] The invention belongs to the field of preparation of light-absorbing materials for photovoltaic solar cells, and in particular relates to a preparation method of a copper indium aluminum selenium thin film with energy band gradient distribution. Background technique [0002] Solar energy is a clean, environmentally friendly renewable new energy. It can replace some fossil fuels and become one of the main energy sources in the future. There are two ways to utilize solar energy: photothermal conversion and photoelectric conversion. Among them, the light-to-heat conversion method is widely used, but the most promising photoelectric conversion method can only be applied in some fields with special requirements due to the high cost of light-absorbing layer materials and device preparation of solar cells. Therefore, it is necessary to develop a cheap and high-efficiency thin-film solar cell preparation process and technology. [0003] At present, copper i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 徐东徐永清杨杰
Owner 徐东
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