Metal interconnect structure and fabrication method thereof

Abstract

The invention provides a metal interconnection structure and a manufacturing method thereof. The metal interconnection structure comprises an interlevel dielectric layer, an opening, metal material and graphene layers. The opening is formed in the interlevel dielectric layer, a through hole or a groove is filled with the metal material, and the graphene layers are formed on the surface of the metal material and between the metal material and the interlevel dielectric layer. The manufacturing method including the steps of providing a semiconductor substrate, forming a sacrificial layer on the semiconductor substrate, forming the opening in the sacrificial layer, filling the opening with the metal material, removing the sacrificial layer to expose side walls of the metal material, and forming the graphene layers on the surface of the metal material. According to the metal interconnection structure and the manufacturing method thereof, by utilizing the characteristic that graphene can grow adhered to the metal material such as copper and nickel, the graphene is formed on the surface of the metal material in the metal interconnection structure as a part of metal interconnection, and therefore resistance of the metal interconnection structure is greatly reduced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a metal interconnection structure and a manufacturing method thereof. Background technique [0002] The metal interconnection process is a process of depositing a metal film on an integrated circuit and forming wiring through photolithography and etching technology to interconnect mutually isolated components into a required circuit according to certain requirements. [0003] The general requirements for metal materials or other conductive materials used in metal interconnection processes are: low resistivity, good low-ohmic contact with the electrodes of the device; good adhesion to the silicon dioxide layer; easy deposition and photolithography to form wiring and the like. [0004] The metal materials commonly used in the metal interconnection process are: aluminum, copper, tungsten, etc. [0005] Among them, aluminum has the following disadvantages: the contact resist...

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Problems solved by technology

[0005] Among them, aluminum has the following disadvantages: the contact resistance of aluminum-silicon is easy to be too large, solid-solid diffusion occurs between aluminum and silicon, electromigration of aluminum, aluminum cannot withstand high temperature treatment, and the height of aluminum-silicon Schottky barrier is not high. stable etc.

However, seedless electroplating also brings new challenges to the copper electroplating process. The difference in structure between ruthenium and copper makes copper electroplating on ruthenium not equivalent to copper electroplating. There are still many challenges in the interface growth and deposition modes. research question

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