Micro-arc ion plating method
A technology of micro-arc ion plating and vacuum chamber, which is applied in the field of material manufacturing, can solve the problems of difficulty in accurately controlling the composition content of the film layer, the surface of the film layer is rough and not fine, and the ionization rate of plating material particles is low, and the preparation method is simple and convenient. The effect of stability, good bonding force and low friction coefficient
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Embodiment 1
[0022] CrN film was plated on the surface of M2 high-speed steel sample by micro-arc ion plating method, and it was implemented according to the following steps:
[0023] Step 1. Clean and dry the M2 high-speed steel sample and put it into the vacuum chamber, and vacuum the vacuum chamber to 6×10 -5 Argon gas is introduced at Pa, and the vacuum degree is kept at 0.6Pa;
[0024] Step 2. Turn on the pulsed Cr target power supply and the pulsed negative bias power supply to clean the sample by ion bombardment. The control parameters are: the pulsed Cr target voltage is -900V, the pulse width is 10μs, and the frequency is 2KHz; the pulsed negative bias voltage is -500V, and the pulse width is 2μs, frequency 150KHz. The ion cleaning time is 10min.
[0025] Step 3, depositing the Cr bottom layer, the control parameters are: pulsed Cr target voltage of -1000V, pulse width of 10μs, frequency of 10KHz; pulse negative bias voltage of -60V, pulse width of 0.5μs, frequency of 250KHz. L...
Embodiment 2
[0032] The surface of WC-Co cemented carbide samples was plated (Cr 0.45 Al 0.55 ) N film, implemented according to the following steps:
[0033] Step 1. Clean and dry the WC-Co cemented carbide sample and put it into the vacuum chamber, and vacuum the vacuum chamber to 6×10 -4At Pa, turn on the temperature control system to heat and control the temperature in the vacuum chamber at 300°C.
[0034] Step 2. Introduce argon gas to keep the vacuum at 0.4Pa;
[0035] Step 3. Turn on the pulse Cr 80 Al 20 The target power supply and the pulse negative bias power supply perform ion bombardment cleaning on the sample, and the control parameters are: pulse Cr 80 Al 20 The target voltage is -1000V, the pulse width is 3μs, and the frequency is 2.5KHz; the pulse negative bias is -400V, the pulse width is 2.5μs, and the frequency is 100KHz. The ion cleaning time is 3min.
[0036] Step 4: Enter N 2 Gas and keep the vacuum at 1.5Pa, start plating (Cr 0.45 Al 0.55 ) N layers. Turn...
Embodiment 3
[0042] Cr-C-N film was plated on the mirror-polished 304 stainless steel sample surface by micro-arc ion plating method, and implemented according to the following steps:
[0043] Step 1. Clean and dry the 304 stainless steel sample and put it into the vacuum chamber, and vacuum the vacuum chamber to 1×10 -4 Argon gas is introduced at Pa, and the vacuum degree is kept at 0.2Pa;
[0044] Step 2. Turn on the pulsed Cr target power supply and the pulsed negative bias power supply to clean the sample by ion bombardment. The control parameters are: pulse target voltage is -950V, pulse width is 12μs, frequency is 5KHz; pulse negative bias voltage is -550V, pulse width is 1.5 μs, frequency 50KHz. The ion cleaning time is 7min.
[0045] Step 3, depositing the Cr bottom layer, the control parameters are: pulsed Cr target voltage of -1200V, pulse width of 10μs, frequency of 10KHz; pulse negative bias voltage of -50V, pulse width of 1.5μs, frequency of 50KHz. last for 4min.
[0046] ...
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