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D-A type polymer semiconductor material and preparation method and application thereof

A polymer, D-A technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problem of unreported preparation performance of related polymers, achieve simple preparation and testing, expand the scope of application, repeatable good effect

Active Publication Date: 2014-01-01
佛山市新量子环保材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Thiophene-containing polymers are a class of organic materials with good photoelectric properties. Thieno[3,4-c]thiophene and its derivatives are limited to a small number of reports on the synthesis of monomers, and all of them are small molecule materials. In fact, With thieno[3,4-c]thiophene as the core, a series of organic semiconductor optoelectronic material monomers can be prepared, but the preparation and properties of related polymers have not been reported.

Method used

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  • D-A type polymer semiconductor material and preparation method and application thereof
  • D-A type polymer semiconductor material and preparation method and application thereof
  • D-A type polymer semiconductor material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0064] Example 1, Preparation of poly 1,2,3,4-tetraphenyl-5,6-dithienyldithienoabenzo-4,7-dithiophenebenzothiadiazole (PTPTDTP-DTBTD)

[0065] (1) Synthesis of 1-methyl-2,5-diphenyl-3,4-dithienylpyrrole (product shown in formula 7)

[0066] In a 150mL two-necked flask, vacuum argon. Then add 80mL of glacial acetic acid and 2.69g (10mmol) of N-methyl-N-benzoylphenylglycine in sequence, stir at room temperature for 30min, then add 2.64g (11mmol) of 1,2-dithienoylacetylene dropwise, heat up to reflux and stir 5h, terminate the reaction. Wash with water and saturated sodium bicarbonate solution successively, and filter to obtain the compound represented by formula 1, which is 3.85 g of a tan product (yield 84.7%).

[0067] (2) Synthesis of N-methyl-2,5-diphenyl-3,4-dithienylthienopyrrole (compound shown in formula 2)

[0068] In a 250mL two-necked flask, vacuum argon. Then 120 mL of benzene and 4.51 g (10 mmol) of 1-methyl-2,5-diphenyl-3,4-dithienylpyrrole were added successiv...

Embodiment 2

[0080] Example 2, Preparation of poly 1,2,3,4-tetrathienyl-5,6-dithienyldithienoabenzo-3,6-dithiophenepyrrolopyrrole diketone (PHTDTP-BTDPP)

[0081] (1) Synthesis of 1-methyl-2,5-dithienyl-3,4-di(2'-bromo)thienylpyrrole (compound represented by formula 1')

[0082] In a 150mL two-necked flask, vacuum argon. Then add 80mL of glacial acetic acid and 2.81g (10mmol) of N-methyl-N-thienoylphenylglycine in sequence, stir at room temperature for 30min and then add 4.44g (11mmol) of 1,2-di(2'-bromo)thienoylacetylene dropwise. ), heated to reflux and stirred for 5h to terminate the reaction. Wash with water and saturated sodium bicarbonate solution successively, and filter to obtain the compound represented by formula 1', which is 5.1 g of a tan product (yield 85%).

[0083] (2) Synthesis of N-methyl-2,5-dithienyl-3,4-di(2'-bromo)thienylthienopyrrole (compound represented by formula 2')

[0084] In a 250mL two-necked flask, vacuum argon. Then add 120mL of benzene and 6.05g (10mmol...

Embodiment 3

[0096] Embodiment 3, the preparation of PTPTDTP organic field effect transistor device

[0097] Silicon wafer cleaning: Cut a silicon wafer with an inorganic insulating layer of silicon dioxide on one side into small pieces of appropriate size, put it in a beaker, add a mixed solvent of hydrogen peroxide and concentrated sulfuric acid with a ratio of about 3:7, and heat it in an electric furnace to boil for about 40 Minutes, pour off the solvent acid solution, rinse off the residual concentrated sulfuric acid and hydrogen peroxide with deionized water, then use deionized water and isopropanol to sonicate for about 10 minutes, and finally blow dry quickly with nitrogen.

[0098] Device preparation: get the silicon wafer with 300nm silicon dioxide on one side after cleaning, then deposit the PTPTDTP prepared in Example 1 on the other side by spin coating method, the solution used is the toluene solution of 2mg / ml, and the rotating speed is 3000 rpm, The thickness of the organic ...

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Abstract

The invention discloses a D-A type polymer semiconductor material and a preparation method and application thereof. The D-A type polymer has a structural formula shown as formula I, wherein R1, R2 and Ar in the formula I are selected from any one of alkyl, aryl and alkyl-substituted aryl; the alkyl is linear or branched alkyl containing 1 to 16 carbon atoms; the aryl is phenyl, fluorenyl, thienyl, fluorine-containing phenyl, nitrogenous heterocyclic radical or silicone-containing heterocyclic radical; a group A represents a receptor and is selected from fluorine-containing phenyl, a diazosulfide group, a derivate of the diazosulfide group, pyrryl, a pyrrolo-pyrrole group and a derivate of the pyrrolo-pyrrole group; X and Y are both selected from any one of S, O, N and Se; m is a natural number from 1 to 4; n is a natural number from 5 to 100. The polymer as shown in the formula I can be used as an organic semiconductor optoelectronic material, and can be specifically used for preparing organic semiconductor photoelectric devices, such as a field-effect transistor, as an organic semiconductor material layer.

Description

technical field [0001] The invention relates to a D-A type polymer semiconductor material and its preparation method and application. Background technique [0002] Organic electronic devices have attracted the attention of academia and industry all over the world for their easy processing, low cost, and high adaptability. As the most basic element of electronic circuits, the development of organic field effect transistors has become a current research hotspot. [0003] Materials are the basis and core of organic electronic devices, and the performance of some organic semiconductor materials has reached a level comparable to that of inorganic semiconductors. For example, the mobility of pentacene (PAN) organic thin film devices has exceeded 5cm 2 V -1 the s -1 (Kelley, T.W.; Muyres, D.V.; Baude, P.F.; Smith, T.P.; Jones, T.D. Mater. Res. Soc. Symp. Proc. 2003, 771, 169.). However, the cost and stability of this material are still far behind that of inorganic materials, so...

Claims

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Application Information

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IPC IPC(8): C08G61/12H01L51/30
Inventor 孟鸿张小涛苑晓闫丽佳
Owner 佛山市新量子环保材料有限公司
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