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Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof

A solar cell, aluminum back field technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as affecting photoelectric conversion efficiency, and achieve the effect of improving photoelectric conversion efficiency, reducing dosage, and promoting photoelectric performance.

Active Publication Date: 2014-01-01
JA SOLAR TECH YANGZHOU +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the light incident or scattered on the back cannot be absorbed by the cell, which affects the photoelectric conversion efficiency.

Method used

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  • Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof
  • Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof
  • Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] This example illustrates the structure and preparation method of a double-sided light-transmitting partial aluminum back field crystalline silicon solar cell (the cross-sectional view of the cell is shown in figure 1 ),Specific steps are as follows:

[0042] A. Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1~10 Ω·cm, and place it in a velvet tank. , the surface texture is carried out at a temperature of 75-90°C to form a suede structure;

[0043] B. Clean the surface of the silicon wafer with a chemical solution. The chemical solution can be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The cleaning time can be 0.5 to 60 minutes. The temperature can be 5~90℃;

[0044] C. After cleaning the above textured sheet, place it in a furnace tube at 700~1000°C for phosphorus (P) diffusion to prepare an n-type emitter. The diffusion time can be 70~150 minutes, and...

Embodiment 2

[0058] This example illustrates a double-sided light-transmitting partial aluminum back field crystal silicon solar cell structure and its preparation method (see the attached figure 1 ),Specific steps are as follows:

[0059] A. Select a lightly doped p-type polysilicon wafer with a resistivity of 0.1~10 Ω cm, place it in a velvet tank, and place it in a 0.5~5% sodium hydroxide deionized aqueous solution by weight, Under the condition of temperature of 75~90℃, the surface texture is formed to form a suede structure;

[0060] B. Clean the surface of the silicon wafer with a chemical solution. The chemical solution is one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The cleaning time is 0.5 to 60 minutes and the temperature is 5 ~90℃;

[0061] C. After cleaning the above textured sheet, place it in a furnace tube at 700~1000°C for phosphorus (P) diffusion to prepare an n-type emitter. The diffusion ti...

Embodiment 3

[0070] This example illustrates the structure and preparation method of a double-sided light-transmitting partial aluminum back field crystalline silicon solar cell (the cross-sectional view of the cell is shown in figure 1 ),Specific steps are as follows:

[0071] A. Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1~10 Ω·cm, and place it in a velvet tank. , the surface texture is carried out at a temperature of 75-90°C to form a suede structure;

[0072] B. Clean the surface of the silicon wafer with a chemical solution. The chemical solution can be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The cleaning time can be 0.5 to 60 minutes. The temperature can be 5~90℃;

[0073] C. After cleaning the above textured sheet, place it in a furnace tube at 700~1000°C for phosphorus (P) diffusion to prepare an n-type emitter. The diffusion time can be 70~150 minutes, and...

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Abstract

The invention discloses a local aluminum back surface field solar battery with two diaphanous faces. The aluminum back surface field solar battery comprises a silicon substrate, an emitting electrode, a front antireflection passive film, a front electrode, a back passive film, a back surface field and a back electrode, wherein the emitting electrode, the front antireflection passive film and the front electrode are arranged on the front face of the silicon substrate, and the back passive film, the back surface field and the back electrode are arranged on the back face of the silicon substrate. The back surface field is a local aluminum back surface field, a hole or a groove is formed in the back passive film, the area where the hole or the groove is formed is covered with linear aluminum paste, partial back passive film is reserved not to be covered with the aluminum paste, and the local aluminum back surface field is formed in the area where the hole or the groove is formed after sintering. The local aluminum back surface field is communicated with the back electrode. The back passive layer (film) of the solar battery is not completely covered with the aluminum paste, the battery can absorb part of incident light or scattered light on the back, the current of the battery and the current of components are increased, and therefore the photoelectric conversion efficiency of the battery and that of the components are improved. The invention further discloses a preparation method for the local aluminum back surface field solar battery with the two diaphanous faces.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a double-sided light-transmitting partial aluminum back-field solar cell and a preparation method thereof. Background technique [0002] Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy. This p-n junction diode is called a solar cell. The semiconductor materials used to make solar cells have a certain band gap. When the solar cell is irradiated by the sun, photons with energy exceeding the band gap generate electron-hole pairs in the solar cell. The p-n junction separates the electron-hole pairs, and the p-n junction The asymmetry determines the flow direction of different types of photo-generated carriers, and the external power can be output through the external circuit connection. This is similar to the principle of ordinary electrochemical cells. [0003] Industrial production ...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0216H01L31/068H01L31/18
CPCY02E10/50H01L31/02167H01L31/022425H01L31/068Y02E10/547H01L31/022441H01L31/1804
Inventor 蒋秀林单伟
Owner JA SOLAR TECH YANGZHOU
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