Photoresist stripping agent

A technology of photoresist and stripper, which is applied in the processing of photosensitive materials, etc. It can solve the problems of easily changing composition and corrosion of metal wiring, etc., and achieve the effect of excellent photoresist stripping property

Inactive Publication Date: 2014-01-22
杨桂望
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the primary or secondary amines have the disadvantages that the composition is easily changed due to the low boiling point, and the weight and composition change after a period of time due to volatilization, thus bringing the in...

Method used

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Examples

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Embodiment 1

[0035] The preparation of embodiment 1 chloride 1-hydroxyethyl-3-hexadecyl imidazole

[0036] Mix 1.79 g of imidazole and 3.8 mL of hexadecane bromide (the molar ratio of substances is 2:1) in 35 mL of ethyl acetate, stir for 10 minutes with magnetic force and mix well. Pour the mixture into a polytetrafluoroethylene liner with a capacity of 60mL, seal the polytetrafluoroethylene liner into a stainless steel reactor, and put it into a digital oven, heat it from room temperature to 120°C for 16 hours, and then cool it naturally to room temperature. Then the mixture was filtered to take out the filtrate, washed several times with distilled water to remove the imidazole that did not participate in the reaction, and the solvent ethyl acetate was evaporated with a rotary evaporator, and the resulting product 1-hexadecyl imidazole was dried in a vacuum oven at 70°C for 12 hours to constant weight. Obtain pale yellow liquid, weigh the product, mix 2.9g of 1-hexadecyl imidazole and ...

Embodiment 2

[0037] Preparation of Example 21-(2-amino-thiourea ethyl)-2-oleic acid imidazoline

[0038] Mix 0.2 mol of oleic acid (Tianjin Bodi Chemical Co., Ltd., analytically pure) with 0.24 mol of diethylenetriamine (Tianjin Bodi Chemical Co., Ltd., analytically pure), and add a mass fraction of 25% to 35% % xylene (Laiyang Kangde Chemical Co., Ltd., analytically pure) was used as a water-carrying agent, and then the mixed solution was continuously stirred, while heating at a uniform speed to 415K-435K for amide dehydration, and the amide was obtained after 2.5 hours of reaction. On this basis, continue to heat up to 495-515K for cyclodehydration, react for 2 hours and cool to 395K, use a vacuum pump to distill under reduced pressure for 0.5 hours to remove xylene and unreacted diethylenetriamine, and finally use iso Propanol (fine chemical plant of Laiyang Economic and Technological Development Zone, analytically pure) recrystallizes the crude product to obtain 1-(2-aminoethyl)-2-olei...

Embodiment 3

[0040] With N-ethyl ethyl carbamate 25g, ethylene glycol monobutyl ether 8g, gallic acid 4g, organic solvent and the chloride 1-hydroxyethyl-3-hexadecylimidazole 4g ​​that embodiment 1 prepares, embodiment 4 g of 1-(2-amino-thiourea ethyl)-2-oleoimidazoline prepared in 2 were mixed and stirred until clear to obtain a stripping agent.

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Abstract

The invention provides a novel photoresist stripping agent comprising N-ethylamino urethane, butylcellosolve, gallic acid, an organic solvent and an anticorrosive agent. The novel photoresist stripping agent is a photoresist stripping agent composition which can not corrode a metal wire and particularly metals such as aluminum, molybdenum, copper, titanium and the like in the process of stripping a photoresist for electronic circuit layout or display element metal wiring and has an excellent photoresist stripping property.

Description

technical field [0001] The present invention relates to a stripper composition for removing a photoresist (resist) used in photolithography (photo-lithography), and more particularly to a stripper composition capable of removing a photoresist used for patterning metal wiring. A photoresist stripper composition that reduces corrosion to metal wiring and can achieve an excellent stripping effect. Background technique [0002] Usually, photoresist (photoresist, photo-resist) is an essential substance in photolithography process, and photolithography process is generally applied to integrated circuit (integrated circuit, IC), Manufacture of semiconductor devices such as large scale integration (LSI) and very large scale integration (VLSI) and image display devices such as liquid crystal displays and flat panel displays [0003] However, after photo-lithography processing, the photoresist is removed by a stripping solution at high temperature, but there is a problem that the low...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 杨桂望
Owner 杨桂望
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