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In-situ growth SiC nanowire enhanced C/SiC composite material and preparation method thereof

A composite material and in-situ growth technology, which is applied in the field of ceramic matrix composite materials, can solve the problems of insufficient impregnation of carbon fiber fabrics, uneven distribution of SiC nanowires, and low density of composite materials, and achieve uniform size and distribution, and bending strength The effect of lifting and improving the bending mechanical properties

Active Publication Date: 2014-02-05
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there are patents related to the in-situ growth of silicon carbide nanowires. For example, the Chinese patent (publication number: CN102951919) discloses a method for growing SiC nanowires in C / SiC composite materials. The method is to place carbon fiber fabrics on polycarbonate Vacuum impregnation in silane solution, followed by pyrolysis to obtain ceramic matrix composites with in-situ growth of SiC nanowires, however, the in-situ growth of SiC nanowires is unevenly distributed and the conversion rate is relatively low; meanwhile, a simple vacuum impregnation process will lead to Insufficient impregnation of the carbon fiber fabric, resulting in a composite with lower density and differentiated performance

Method used

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  • In-situ growth SiC nanowire enhanced C/SiC composite material and preparation method thereof
  • In-situ growth SiC nanowire enhanced C/SiC composite material and preparation method thereof
  • In-situ growth SiC nanowire enhanced C/SiC composite material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0051] 1. Dissolve 50 grams of polycarbosilane in 100 milliliters of solvent gasoline, then add 0.28 grams of reduced iron powder and 180 grams of silicon carbide grinding balls. The mixture was ball milled in a planetary ball mill for 2 hours at room temperature to obtain the desired slurry;

[0052] 2. Immerse a 60×60×12mm C fiber preform into the slurry, place it in a vacuum impregnation tank, evacuate to minus 0.1MPa and keep the pressure for 1 hour, then pressurize to 2MPa and maintain it for 2 hours , and then put the impregnated C fiber preform in the air for cross-linking and curing for more than 6 hours;

[0053] 3. Put the cross-linked and solidified preform in a multi-functional high-temperature furnace, raise the temperature to 1300°C at a heating rate of 5°C / min, and keep warm at 400°C, 800°C and 1300°C for 2 hours, and cool naturally after reaction To room temperature, obtain the C fiber prefabricated body of growing SiC nanowire in situ;

[0054] 4. Immerse th...

Embodiment 2

[0056] 1. Dissolve 50 grams of polycarbosilane in 100 ml of solvent gasoline, then add 0.294 grams of 200-mesh nickel powder, and add 180 grams of silicon carbide grinding balls. The mixture was ball milled in a planetary ball mill for 2 hours at room temperature to obtain the desired slurry;

[0057] 2. Immerse a 60×60×12mm C fiber preform into the slurry, place it in a vacuum impregnation tank, evacuate to minus 0.1MPa and keep the pressure for 1 hour, then pressurize to 2MPa and maintain it for 2 hours , and then put the impregnated C fiber preform in the air for cross-linking and curing for more than 6 hours;

[0058] 3. Put the cross-linked and solidified preform in a multi-functional high-temperature furnace, raise the temperature to 1300°C at a heating rate of 5°C / min, and keep warm at 400°C, 800°C and 1300°C for 2 hours, and cool naturally after reaction To room temperature, obtain the C fiber prefabricated body of growing SiC nanowire in situ;

[0059] 4. Immerse th...

Embodiment 3

[0061] 1. Dissolve 50 grams of polycarbosilane in 100 ml of solvent gasoline, then add 0.588 grams of 200-mesh nickel powder and 0.56 grams of reduced iron powder, and add 180 grams of silicon carbide grinding balls. The mixture was ball milled in a planetary ball mill for 2 hours at room temperature to obtain the desired slurry;

[0062] 2. Immerse a 60×60×12mm C fiber preform into the slurry, place it in a vacuum impregnation tank, evacuate to minus 0.1MPa and keep the pressure for 1 hour, then pressurize to 2MPa and maintain it for 2 hours , and then put the impregnated C fiber preform in the air for cross-linking and curing for more than 6 hours;

[0063] 3. Put the cross-linked and solidified preform in a multi-functional high-temperature furnace, raise the temperature to 1300°C at a heating rate of 5°C / min, and keep warm at 400°C, 800°C and 1300°C for 2 hours, and cool naturally after reaction To room temperature, obtain the C fiber prefabricated body of growing SiC nan...

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Abstract

The invention relates to an in-situ growth SiC nanowire enhanced C / SiC composite material and a preparation method thereof. The preparation method comprises the following steps: (1) preparing size, namely mixing and ball milling polycarbosilane, a catalyst and a solvent to prepare the size, wherein the catalyst is iron, nickel and / or ferrocene; (2) performing vacuum high pressure impregnation, namely immersing a C fiber preform in the size, keeping in a vacuum state for 0.1-1 hour, introducing high-pressure inert gases to 1-10MPa, and maintaining the pressure for 1-4 hours; (3) cross-linking and curing, namely performing cross-linking and curing on the impregnated C fiber preform in air for over 6 hours to prepare a preform; and (4) performing high-temperature pyrolysis, namely raising the temperature of the preform to be 1000-1300 DEG C at a temperature rise rate of 2-10 DEG C per minute in a protective atmosphere, keeping the temperature for 1-4 hours, and growing SiC nanowires in situ under the action of a metal catalyst in the polycarbosilane pyrolysis process, so that the in-situ growth SiC nanowire enhanced C / SiC composite material is prepared.

Description

technical field [0001] The invention relates to a preparation method for in-situ growth of SiC nanowire reinforced C / SiC composite materials, which is mainly used for space lightweight support structures and thermal structural components, and belongs to the field of ceramic matrix composite materials. Background technique [0002] With the development of new engines and the development of new concept space vehicles, higher requirements are put forward for high temperature structural materials. As a new type of advanced ceramic matrix composite material, C / SiC composite material combines many advantages of C fiber and SiC ceramics. Because of its excellent properties such as high strength, high toughness, corrosion resistance and low density at high temperature, it can be applied In the fields of aircraft thermal protection, aerospace engine thermal structural parts, space remote sensing support components and other fields, research on C / SiC composite materials has continued ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/524C04B35/565C04B35/622
Inventor 裴兵兵朱云洲黄政仁姚秀敏袁明
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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