A low-temperature liquid-phase growth method for preparing zno nanocone arrays

A low-temperature liquid phase, growth method technology, applied in liquid phase epitaxy layer growth, single crystal growth, crystal growth and other directions, can solve the problem of low quality of ZnO nanostructure array, affecting ZnO crystal grain crystallization and growth, ZnO quality and purity It can achieve the effect of low cost, high crystal quality and purity, and improving the quality and purity of ZnO.

Active Publication Date: 2016-08-17
SOUTHEAST UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] The problems existing in the preparation of ZnO nanoarrays by the existing solution method are mainly as follows: First, the main reason for the high reaction temperature of the liquid-phase synthesis of ZnO nanoarrays is that the reaction solution contains organic complex components, and in the process of generating ZnO Thermal decomposition of the organic complex is required, which undoubtedly requires a higher reaction temperature and increases energy consumption
Second, the main reason limiting the low quality of liquid-phase synthesis of ZnO nanostructure arrays is that a large number of powder grains in the solution will be deposited on the substrate surface during the reaction.
If the supersaturation of the solution is too high, on the one hand, a large amount of ZnO nucleates and grows uniformly, on the other hand, the OH of zinc - Ligand [Zn(OH)] (n-2) -n It is easy to gather together through the hydrolysis reaction, forming a large amount of solution powder in the solution, these powder grains will be deposited on the substrate surface during the reaction, seriously affecting the crystallization and growth of ZnO grains on the substrate surface, resulting in the formation of The ZnO quality and purity are not high

Method used

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  • A low-temperature liquid-phase growth method for preparing zno nanocone arrays
  • A low-temperature liquid-phase growth method for preparing zno nanocone arrays
  • A low-temperature liquid-phase growth method for preparing zno nanocone arrays

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Embodiment 1

[0033] Embodiment 1 Cu substrate grows ZnO nanocone array at 35°C

[0034] ①Respectively prepare a concentration of 4.0mol L -1 KOH aqueous solution and a concentration of 0.5mol L -1 Zn(NO 3 ) 2 aqueous solution. ②KOH aqueous solution and Zn(NO 3 ) 2 The aqueous solution is mixed according to the volume ratio of 1:1, and at the same time, it is fully magnetically stirred. After the reaction, a clear solution is obtained, which is the required 0.25mol L -1 Zn(OH) 4 2- reaction solution. ③ Pour the reaction solution into the reaction container, and then suspend the cleaned Cu substrate growth side down in the reaction solution (such as figure 1 ), then seal the reaction vessel, place it in an electrothermal constant temperature water tank that has reached the reaction temperature, grow in a water bath at 35°C for 1h, 4h, and 12h, take it out, rinse it with deionized water, and then rinse it with absolute ethanol. After vacuum drying at room temperature, it can be foun...

Embodiment 2

[0037] Embodiment 2: grow ZnO nanocone array on FTO glass substrate

[0038] Using the substrate placement method described in this patent, by KOH and Zn(NO 3 ) 2 Prepared 0.25mol·L -1 Zn(OH) 4 2- In the reaction system, using FTO glass as the substrate, the ZnO array thin film prepared after 12h growth in 35℃ water bath, the morphology is as follows: Figure 8 shown.

Embodiment 3

[0039] Embodiment 3: Cu substrate grows ZnO nano cone array at different temperatures

[0040] Adopt the substrate placing method described in the present invention, in by KOH and Zn(NO 3 ) 2 Prepared 0.25mol·L -1 Zn(OH) 4 2- In the reaction system, the prepared and cleaned Cu sheet was used as the substrate, and the ZnO array films were grown in water baths at 25°C and 40°C for 12 hours, and the morphology was as follows: Figure 9 and Figure 10 shown.

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Abstract

The invention relates to a low-temperature liquid-phase growth method for preparing a ZnO nanocone array. In the growth liquid, the growth surface of the substrate is suspended downward; the cleaned substrate growth surface is directly suspended in the growth solution and grown in a water bath to obtain the ZnO nanocone. array; the array growth solution was KOH and Zn(NO 3 ) 2 Formulated Zn(OH) 4 2‑ aqueous solution. Its characteristics are: no seed layer, no external field, template and auxiliary agent; the substrate does not need to contain zinc. The method has the advantages of simple equipment and process, easy operation, low energy consumption, environmental friendliness, safe process, low cost, stable product performance, firm combination with substrate, and suitability for industrialized production. The ZnO nano-cone array prepared by the invention has broad application prospects and huge market benefits in aspects such as super-hydrophobic surfaces, detectors, piezoelectric converters, ultraviolet lasers and solar cells.

Description

technical field [0001] The invention relates to a simple one-step wet chemical method for preparing ZnO nanocone arrays, in particular to a method for growing ZnO nanocone arrays in liquid phase at low temperature (the temperature does not exceed 50°C) on an inert substrate (the substrate does not participate in the reaction). Background technique [0002] ZnO is an important wide-bandgap semiconductor functional material, with a bandgap width of 3.37eV at room temperature and an exciton binding energy as high as 60meV. It has strong free exciton transition luminescence in the ultraviolet band, and it is easy to achieve high-efficiency laser emission at room temperature. . Due to its excellent physical and chemical properties (such as extremely high elastic modulus, extremely low thermal expansion coefficient, high thermal stability, large exciton binding energy and negative electron affinity, etc.), it is used in Sensors, photoelectric conversion, photocatalysis, and light...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B19/00C30B29/62
Inventor 余新泉夏咏梅吴春晓章雯张友法陈锋
Owner SOUTHEAST UNIV
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