A low-temperature liquid-phase growth method for preparing zno nanocone arrays

A low-temperature liquid phase, growth method technology, applied in liquid phase epitaxy layer growth, single crystal growth, crystal growth and other directions, can solve the problem of low quality of ZnO nanostructure array, affecting ZnO crystal grain crystallization and growth, ZnO quality and purity It can achieve the effect of low cost, high crystal quality and purity, and improving the quality and purity of ZnO.
CN103603040BActive Publication Date: 2016-08-17SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2016-08-17

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Abstract

The invention relates to a low-temperature liquid-phase growth method for preparing a ZnO nanocone array. In the growth liquid, the growth surface of the substrate is suspended downward; the cleaned substrate growth surface is directly suspended in the growth solution and grown in a water bath to obtain the ZnO nanocone. array; the array growth solution was KOH and Zn(NO 3 ) 2 Formulated Zn(OH) 4 2‑ aqueous solution. Its characteristics are: no seed layer, no external field, template and auxiliary agent; the substrate does not need to contain zinc. The method has the advantages of simple equipment and process, easy operation, low energy consumption, environmental friendliness, safe process, low cost, stable product performance, firm combination with substrate, and suitability for industrialized production. The ZnO nano-cone array prepared by the invention has broad application prospects and huge market benefits in aspects such as super-hydrophobic surfaces, detectors, piezoelectric converters, ultraviolet lasers and solar cells.
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Description

technical field

[0001] The invention relates to a simple one-step wet chemical method for preparing ZnO nanocone arrays, in particular to a method for growing ZnO nanocone arrays in liquid phase at low temperature (the temperature does not exceed 50°C) on an inert substrate (the substrate does not participate in the reaction). Background technique

[0002] ZnO is an important wide-bandgap semiconductor functional material, with a bandgap width of 3.37eV at room temperature and an exciton binding energy as high as 60meV. It has strong free exciton transition luminescence in the ultraviolet band, and it is easy to achieve high-efficiency laser emission at room temperature. . Due to its excellent physical and chemical properties (such as extremely high elastic modulus, extremely low thermal expansion coefficient, high thermal stability, large exciton binding energy and negative electron affinity, etc.), it is used in Sensors, photoelectric conversion, photocatalysis, and light...

Claims

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