Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell

A diffusion method and a technology of silicon wafers, which are applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of increasing surface recombination rate, difficulty in controlling, and destroying the surface lattice of silicon wafers, so as to reduce the surface recombination rate And, improve the conversion efficiency and improve the effect of poor uniformity

Active Publication Date: 2014-03-12
一道新能源科技(衢州)有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high-temperature deposition and high-temperature diffusion methods are complex and difficult to control, and the single-tube production capacity is low. The output of each furnace tube is only 80%, and the consumption of boron source is relatively large. The excess boron source reacts with the quartz furnace tube to form A large amount of borosilicate glass (BGS) not only seriously corroded the diffusion furnace and other equipment, but also caused serious waste of boron source
The most important thing is that the uniformity of the diffusion square resistance obtained by the high-temperature deposition and high-temperature d

Method used

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  • Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell
  • Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell
  • Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell

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Effect test

Embodiment 1

[0038] 1) Deposition stage: N-type silicon wafers are taken for phosphorus diffusion and wet etching in sequence, and the wet-etched silicon wafers (provided by Baoding Tianwei Yingli New Energy Co., Ltd.) are placed in the furnace tube of the diffusion furnace. The silicon wafers are placed perpendicular to the quartz boat, and 500 wafers are placed in each furnace tube. Raise the temperature to 870°C at 10°C / min, feed nitrogen, oxygen, and nitrogen carrying boron tribromide, wherein the flow rate of oxygen is 450sccm, the flow rate of nitrogen carrying boron tribromide is 650sccm, the flow rate of nitrogen gas is 23slm, and the deposition time is 23 minute.

[0039] 2) Diffusion stage: Stop feeding oxygen and boron sources, continue to feed nitrogen gas with a flow rate of 23slm, and at the same time raise the temperature to 1000°C at 10°C / min, and diffuse on the surface at 1000°C for 25 minutes.

[0040] 3) Post-oxidation stage: Cool down the silicon wafer to 800°C (the co...

Embodiment 2

[0043] 1) Deposition stage: N-type silicon wafers are taken for phosphorus diffusion and wet etching in sequence, and the wet-etched silicon wafers (provided by Baoding Tianwei Yingli New Energy Co., Ltd.) are placed in the furnace tube of the diffusion furnace. The silicon wafers are placed perpendicular to the quartz boat, and 500 wafers are placed in each furnace tube. Raise the temperature to 860°C at 10°C / min, feed nitrogen, oxygen, and nitrogen carrying boron tribromide, wherein the flow rate of oxygen is 350 sccm, the flow rate of nitrogen gas carrying boron tribromide is 500 sccm, the flow rate of nitrogen gas is 23 slm, and the deposition time is 20 minute.

[0044] 2) Diffusion stage: Stop feeding oxygen and boron sources, continue to feed nitrogen gas with a flow rate of 23slm, and at the same time raise the temperature to 950°C at 5°C / min, and diffuse on the surface at 950°C for 15 minutes.

[0045] 3) Post-oxidation stage: Cool down the silicon wafer to 750°C (th...

Embodiment 3

[0048] 1) Deposition stage: N-type silicon wafers are taken for phosphorus diffusion and wet etching in sequence, and the wet-etched silicon wafers (provided by Baoding Tianwei Yingli New Energy Co., Ltd.) are placed in the furnace tube of the diffusion furnace. The silicon wafers are placed perpendicular to the quartz boat, and 500 wafers are placed in each furnace tube. Raise the temperature to 880°C at 10°C / min, feed nitrogen, oxygen, and nitrogen carrying boron tribromide, wherein the oxygen flow rate is 550 sccm, the nitrogen flow rate carrying boron tribromide is 800 sccm, the nitrogen flow rate is 22.5slm, and the deposition time is 25 minutes.

[0049] 2) Diffusion stage: Stop feeding oxygen and boron sources, continue feeding nitrogen with a flow rate of 22.5 slm, and at the same time raise the temperature to 1100°C at 15°C / min, and diffuse on the surface at 1100°C for 30 minutes.

[0050] 3) Post-oxidation stage: Cool down the silicon wafer to 800°C (the cooling met...

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Abstract

The invention discloses a boron diffusion method of an N type silicon chip, a crystalline silicon solar cell and a manufacturing method of the crystalline silicon solar cell. The boron diffusion method comprises the following steps of a deposition stage: placing the silicon chip subjected to wet etching into a diffusion furnace, and then introducing nitrogen, oxygen and a boron source for depositing the surface of the silicon chip; a diffusion stage: raising the temperature of the silicon chip with the surface being deposited to a preset temperature for promoting the diffusion of boron; a temperature dropping stage: dropping the temperature of the silicon chip with the boron being diffused, and introducing nitrogen in the temperature dropping process to obtain the silicon chip with the boron being diffused. After the deposition diffusion process disclosed by the invention is adopted, the concentration of boron atoms on the surface of the silicon chip is reduced, the recombination rate and the lattice damage of the surface are reduced, the STDEV (standard deviation) is controlled to be about 2.0, the sheet resistance uniformity of boron diffusion is improved, the battery conversion efficiency is improved, the consumption of boron sources is also reduced, BGS (borosilicate glass) is prevented from being excessively generated, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a boron diffusion method for an N-type silicon wafer, a crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, developing cost-effective silicon solar cells has become one of the main research directions of photovoltaic companies in various countries. [0003] In the prep...

Claims

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Application Information

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IPC IPC(8): H01L21/22H01L31/18H01L31/068
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 袁广锋何广川陈艳涛李雪涛
Owner 一道新能源科技(衢州)有限公司
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