Preparation method of solar cell with electroplated silver electrodes
A solar cell and electroplating silver technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor passivation effect on the front surface and back surface of the battery, low conversion efficiency of long-wave and short-wave bands, and large battery series resistance, etc., to achieve high Good aspect ratio, improved reflectivity, enhanced absorption effect
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[0029] The preparation method of the electroplated silver electrode solar cell of the present embodiment comprises the following steps:
[0030] Step 1: Carry out back polishing treatment on the silicon wafer and perform chemical cleaning;
[0031] The second step: use HF / HON3 etching method to make suede on the surface of the silicon wafer, and perform chemical cleaning and drying;
[0032] The third step: Phosphorus doping is carried out on the front and back of the battery at the same time to complete the preparation of the PN junction;
[0033] Step 4: Use In-line acid etching equipment to complete the isolation of the edge PN junction and remove the phosphosilicate glass on the surface;
[0034] Step 5: Use a tubular diffusion furnace to perform thermal oxidation on the front and back of the battery at the same time to prepare the SIO2 film;
[0035] Step 6: Prepare SIN film on the front and back of the battery by PECVD;
[0036] Step 7: Use screen printing equipment t...
Embodiment 1
[0049] Step 1: Use RENA’s PSG equipment to polish the back of the silicon wafer, and perform chemical cleaning, use spray cleaning, and use HF / HAC / additive to synthesize the mixed acid to clean the surface of the silicon wafer. The cleaning temperature is 25 ° C. The time is: 1min;
[0050] The second step: use HF / HON3 etching method to make suede on the surface of the silicon wafer, and perform chemical cleaning and drying;
[0051] The third step: Phosphorus doping is carried out on the front and back of the battery at the same time to complete the preparation of the PN junction;
[0052] Step 4: Use In-line acid etching equipment to complete the isolation of the edge PN junction and remove the phosphosilicate glass on the surface;
[0053] Step 5: Use a tubular diffusion furnace to perform thermal oxidation on the front and back of the battery at the same time. The temperature of thermal oxidation is 600 ° C, and prepare the SiO2 film;
[0054] Step 6: Prepare SiN film on...
Embodiment 2
[0062] After the monocrystalline silicon wafer is subjected to alkali texturing, use RENA's PSG equipment for rough polishing, and complete the diffusion of 70ohm, and then complete the preparation of 20nm SiO2 film on the front and back of the battery, and then prepare the preparation of 60nm SiN film, and use screen printing The technology produces the first layer of 30um grid lines with a height of about 5um, and then uses electroplating technology to expand to a grid line width of 40um, and the height is superimposed to about 10um, and finally achieves a battery conversion efficiency of 19.6%, compared with 1.0% for conventional batteries The gain, but thanks to the reduction of silver paste and the gain of efficiency, the final cost per unit watt value has not increased.
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