Preparing method of transferable Te-Cd-Hg film

A mercury cadmium telluride, thin film technology, applied in semiconductor/solid state device manufacturing, electrical components, circuits, etc., can solve the problems of inability to meet device requirements, difficulty in thin film growth, differences in optical properties, etc., and achieve the effect of convenient selection

Inactive Publication Date: 2014-04-02
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As far as the current results are concerned, the HgCdTe thin films formed on amorphous substrates are all amorphous, and their optical properties are still significantly different from those of crystalline HgCdTe thin films. Require
In comparison, flexible substrate materials have more advantages in terms of flexibility, manufacturability, and cost reduction, but a fatal weakness of flexible substrate materials is that they are not resistant to high temperatures. Generally, they are prone to melting deformation when they exceed 160 °C, and The vast majority of flexible materials are organic amorphous, which brings great difficulty to the growth of thin films

Method used

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  • Preparing method of transferable Te-Cd-Hg film

Examples

Experimental program
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Effect test

Embodiment 1

[0030] (1) Preparation of graphene

[0031] Put the copper foil into a vacuum chemical vapor deposition (CVD) system composed of a high-temperature tube furnace and a compound molecular pump, pump the system to below 10Pa, and start heating up. When the temperature rises to 300°C, H is introduced into the 2 (Flow rate 50sccm), continue to heat up to 1050°C, keep the temperature for 20 minutes and then pass CH 4 (Flow 50sccm), after 50 minutes of ventilation, turn off CH 4 , after keeping the constant temperature for 15 minutes, turn off the H 2 , followed by rapid cooling to obtain single-layer graphene.

[0032] (2) Pre-exfoliation of graphene layer

[0033] Put the graphene obtained in step (1) and the release film evenly coated with UV photolytic glue on the surface, put it in an oven at 80°C for 1 minute, take it out, and after a period of time, put it in FeCl 3 Soak in the solution at room temperature until the Cu substrate is completely corroded. The "graphene + re...

Embodiment 2

[0039] (1) Preparation of graphene

[0040]Put the copper foil into a vacuum chemical vapor deposition (CVD) system composed of a high-temperature tube furnace and a compound molecular pump, pump the system to below 10Pa, and start heating up. When the temperature rises to 300°C, H is introduced into the 2 (Flow rate 50sccm), continue to heat up to 1050°C, keep the temperature for 20 minutes and then pass CH 4 (Flow 50sccm), after 50 minutes of ventilation, turn off CH 4 , after keeping the constant temperature for 15 minutes, turn off the H 2 , followed by rapid cooling to obtain single-layer graphene.

[0041] (2) Pre-exfoliation of graphene layer

[0042] Put the graphene obtained in step (1) and the release film evenly coated with UV photolytic glue on the surface, put it in an oven at 80°C for 1 minute, take it out, and after a period of time, put it in FeCl 3 Soak in the solution at room temperature until the Cu substrate is completely corroded. The "graphene + rel...

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Abstract

The invention relates to a preparing method of a transferable Te-Cd-Hg film. The method comprises the steps of performing vapor deposition on a metal substrate to obtain a graphene layer, adhering the obtained structural material with a release film of which the surface is uniformly coated with a photolysis glue into a whole by proper heating and baking, then corroding the metal substrate off, rinsing the rest ''graphene+photolysis glue+release film structural material with deionized water, drying and adhering the structural material with a hard transparent high-temperature resistant substrate into a whole with a hydrolysis glue to form a ''transition substrate+hydrolysis glue layer+graphene+photolysis glue layer+release film'' structure material; releasing the photolysis glue and removing the release film to obtain the ''transition substrate+hydrolysis glue layer+graphene'' structural material, depositing a Te-Cd-Hg film with a laser molecular beam epitaxy method, releasing the hydrolysis glue, removing the transition substrate, and moving the ''graphene+Te-Cd-Hg'' structural material onto a target substrate material. The crystalline state Te-Cd-Hg film can be obtained on amorphous state inorganic substrate and organic substrate materials.

Description

technical field [0001] The invention relates to a preparation method of a transferable mercury cadmium telluride thin film, belonging to the technical field of infrared thin film materials. Background technique [0002] Mercury cadmium telluride material is a pseudo-binary compound semiconductor alloy material with direct band gap, due to its low intrinsic carrier concentration, high electron mobility, large electron-to-hole mobility ratio, large light absorption coefficient, and low thermal excitation rate , small electronic effective mass, thermal expansion coefficient close to that of silicon, etc., has been the most widely used main material in infrared detectors at present, and has an extremely important application background in the fields of military technology and space technology. [0003] However, due to its unique physical characteristics, it has been difficult to find an excellent preparation technology for the preparation of HgCdTe single crystal materials. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0304
CPCH01L21/02376H01L21/02411H01L21/02425H01L21/02527H01L21/7813H01L31/0336H01L31/1896
Inventor 刘玫满宝元毕冬
Owner SHANDONG NORMAL UNIV
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