Method for manufacturing graphene nanowire device

Abstract

The invention belongs to the technical field of carbon-based integrated circuit manufacturing, and particularly discloses a method for manufacturing a graphene nanowire device. The method includes the steps of etching a thin and long nanometer groove in a silicon dioxide substrate, and depositing a plurality of discontinuous small copper blocks in the groove through a mask plate, enabling the small copper blocks to serve as graphene coring sites, growing a layer of graphene nanowires in the groove through low-pressure chemical vapor deposition, growing high-K dielectric in the groove through atomic layer deposition to cover the graphene nanowires to form high-K gate dielectric of the device, and then manufacturing electrodes of the source, the drain and the gate of the device to form the graphene nanowire device. The method is simple, convenient to use and reliable, the ultra-long nanowires can be manufactured, the energy gap of the graphene nanowires is large, and the high-K gate dielectric can be formed on graphene through atomic layer deposition. The method can serve as a basic method for manufacturing the graphene nanowire device.

Description

technical field [0001] The invention belongs to the technical field of carbon-based integrated circuit manufacturing, and in particular relates to a method for preparing a graphene nanowire device. Background technique [0002] In the field of semiconductor manufacturing, as the device size is getting closer and closer to its physical limit, it has entered the post-Moore era. The discovery of graphene brings hope to people. Graphene is a honeycomb two-dimensional crystal composed of a single layer of hexagonal cell carbon atoms, which is a layer of graphite. figure 1 Shown is a schematic diagram of the basic structure of graphene. Graphene has a much higher carrier mobility than silicon. Graphene has a high-speed electron mobility of 200,000 cm2 / V s at room temperature, a quantum Hall effect, a high theoretical specific surface area of ​​2600 m2 / g, and a high thermal conductivity. With a conductivity of 3000 W / m K and excellent mechanical properties (high modulus 1060GPa,...

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Problems solved by technology

In addition, since there are no dangling bonds on the surface of graphene and its chemical properties are inactive, it is very difficult to directly deposit high-K dielectrics on graphene by atomic layer deposition.

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