Method for manufacturing graphene nanowire device

A technology of graphene nanometers and devices, which is applied in the field of preparing graphene nanowire devices, can solve the problems of inactive chemical properties and difficulties in depositing high-K dielectrics, and achieve the effects of small impact, reduced process steps, and reduced damage

Inactive Publication Date: 2014-07-09
FUDAN UNIV
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Problems solved by technology

In addition, since there are no dangling bonds on the surface of graphene and its chemical properties are i

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  • Method for manufacturing graphene nanowire device
  • Method for manufacturing graphene nanowire device
  • Method for manufacturing graphene nanowire device

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[0018] The invention utilizes the etching of the nano groove on the substrate to directly grow the required ultra-long graphene nanowires in the groove. Then use the dangling bonds of silicon dioxide on the sidewalls of the nanogrooves to grow high-K dielectrics by atomic layer deposition, and fill the nanogrooves with high-K dielectrics, so that the high-K dielectrics are physically covered on the graphene to form graphene High-K gate dielectric, which reduces damage to graphene. Described below are examples of preparing graphene nanowire devices proposed by the present invention.

[0019] In the figure, for the convenience of description, the structure size and ratio do not represent the actual size.

[0020] First, provide silicon dioxide (SiO 2 ) Thin film sample 101, clean the sample, remove some magazines, particles, residual reagents, etc. on the surface of the sample, so that the graphene silica sample is very clean and tidy. Such as figure 2 Shown.

[0021] Next, etchin...

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Abstract

The invention belongs to the technical field of carbon-based integrated circuit manufacturing, and particularly discloses a method for manufacturing a graphene nanowire device. The method includes the steps of etching a thin and long nanometer groove in a silicon dioxide substrate, and depositing a plurality of discontinuous small copper blocks in the groove through a mask plate, enabling the small copper blocks to serve as graphene coring sites, growing a layer of graphene nanowires in the groove through low-pressure chemical vapor deposition, growing high-K dielectric in the groove through atomic layer deposition to cover the graphene nanowires to form high-K gate dielectric of the device, and then manufacturing electrodes of the source, the drain and the gate of the device to form the graphene nanowire device. The method is simple, convenient to use and reliable, the ultra-long nanowires can be manufactured, the energy gap of the graphene nanowires is large, and the high-K gate dielectric can be formed on graphene through atomic layer deposition. The method can serve as a basic method for manufacturing the graphene nanowire device.

Description

technical field [0001] The invention belongs to the technical field of carbon-based integrated circuit manufacturing, and in particular relates to a method for preparing a graphene nanowire device. Background technique [0002] In the field of semiconductor manufacturing, as the device size is getting closer and closer to its physical limit, it has entered the post-Moore era. The discovery of graphene brings hope to people. Graphene is a honeycomb two-dimensional crystal composed of a single layer of hexagonal cell carbon atoms, which is a layer of graphite. figure 1 Shown is a schematic diagram of the basic structure of graphene. Graphene has a much higher carrier mobility than silicon. Graphene has a high-speed electron mobility of 200,000 cm2 / V s at room temperature, a quantum Hall effect, a high theoretical specific surface area of ​​2600 m2 / g, and a high thermal conductivity. With a conductivity of 3000 W / m K and excellent mechanical properties (high modulus 1060GPa,...

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Application Information

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IPC IPC(8): H01L21/336B82Y40/00
CPCB82Y10/00H01L29/66439
Inventor 周鹏杨松波沈于兰
Owner FUDAN UNIV
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