A kind of sapphire chip and metal active sealing method

A metal active and sapphire technology, applied in metal processing equipment, welding equipment, manufacturing tools, etc., can solve the problems of insufficient particle size and insufficient affinity between gemstones, and achieve good air tightness, welding reliability and yield rate High, to ensure the effect of airtightness requirements

Active Publication Date: 2016-02-10
XI AN JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the current production process problems, the particle size of titanium-zirconium-copper-nickel active solder is obviously not as fine as that of silver-copper-titanium active solder, and the affinity with gemstones is not enough.

Method used

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  • A kind of sapphire chip and metal active sealing method
  • A kind of sapphire chip and metal active sealing method
  • A kind of sapphire chip and metal active sealing method

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A method for actively sealing a sapphire sheet and a metal, the operation steps of which are as follows:

[0025] The first step: machining the Kovar metal piece, so that the processed Kovar metal piece has a support step radially matched with the sapphire sheet, the width of the step of the support step is 0.7mm, and the thickness of the side wall of the support step is It is 0.18mm, and the Kovar metal parts after machining need to be nickel-plated and hydrogen-burned;

[0026] Step 2: Process sapphire flakes with a thickness of 0.08mm, so that the radial fit gap between the sapphire flakes and the Kovar metal parts is 0.12mm, and then perform 10s of potassium dichromate sulfuric acid mixed solution cleaning, 3s of hydrofluoric acid surface cleaning hair An oxidation step to increase the contact area and adhesion between the solder and sapphire;

[0027] Step 3: Select a titanium-zirconium-copper-nickel solder paste with a melting point of 830-850°C and an average pa...

Embodiment 2

[0034] A method for actively sealing a sapphire sheet and a metal, the operation steps of which are as follows:

[0035] The first step: machining the Kovar metal piece, so that the processed Kovar metal piece has a support step radially matched with the sapphire sheet, the step width of the support step is 0.4mm, and the side wall thickness of the support step is It is 0.28mm, and the Kovar metal parts after machining need to be nickel-plated and hydrogen-burned;

[0036] Step 2: Process sapphire flakes with a thickness of 0.20mm, so that the radial fit gap between the sapphire flakes and the Kovar metal parts is 0.06mm, and then perform 5s of potassium dichromate sulfuric acid mixed solution cleaning, 5s of hydrofluoric acid surface cleaning hair An oxidation step to increase the contact area and adhesion between the solder and sapphire;

[0037] Step 3: Select a titanium-zirconium-copper-nickel solder paste with a melting point of 830-850°C and an average particle size of ...

Embodiment 3

[0044] A method for actively sealing a sapphire sheet and a metal, the operation steps of which are as follows:

[0045] The first step: machining the Kovar metal piece, so that the processed Kovar metal piece has a support step radially matched with the sapphire sheet, the width of the step position of the support step is 0.6mm, and the side wall thickness of the support step is It is 0.24mm, and the Kovar metal parts after machining need to be nickel-plated and hydrogen-burned;

[0046] Step 2: Process sapphire flakes with a thickness of 0.10mm, so that the radial fit gap between the sapphire flakes and the Kovar metal parts is 0.10mm, and then perform 5s of potassium dichromate sulfuric acid mixed solution cleaning, 5s of hydrofluoric acid surface cleaning hair An oxidation step to increase the contact area and adhesion between the solder and sapphire;

[0047] Step 3: Select a titanium-zirconium-copper-nickel solder paste with a melting point of 830-850°C and an average p...

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Abstract

The invention provides an active sealing method between sapphire sheet and metal with low welding temperature, high efficiency, good reliability and low cost. It eliminates the defects of long, complex and time-consuming intermediate processing, shortens the total welding time, and improves production efficiency; avoids the defects that the solder sheet must be processed into precise dimensions and requires extremely high flatness, and directly uses active titanium zirconium copper Nickel solder; the wall thickness of the sealing part of the metal part is made relatively thin to reduce the thermal stress caused by the reaction of the thermal expansion of the sapphire sheet to the extrusion of the metal part during welding, and reduce the probability of the sapphire sheet bursting; at the same time, the temperature of the welding in the vacuum atmosphere is less than 1000 It can be completed at one time at ℃, and the requirements for welding equipment are extremely low. The welding reliability and yield rate of the product are high. The airtightness is good when baked at 560℃ for 36 hours, which can ensure the airtightness requirements of ultra-high frequency electric vacuum devices.

Description

technical field [0001] The invention belongs to the technical field of vacuum device sealing, and in particular relates to an active sealing method for a sapphire sheet and a metal. Background technique [0002] In recent years, with the deepening of research on short millimeter wave electric vacuum devices, especially terahertz electric vacuum devices, the demand for sealing dielectric materials with low loss and high mechanical strength has been increasing. Among the current sealing media, compared with diamond, beryllium oxide, and boron nitride, sapphire has high mechanical strength, good microwave permeability, and low loss. It can be processed into ultra-thin thickness, mature manufacturing process, low cost, and non-toxic. Harmless, it has basically become the material of choice for the output window medium in the UHF electric vacuum device manufacturing industry. However, since sapphire is a high-purity alumina structure with few internal glass phases, metallization...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K1/008B23K1/20B23K1/19
CPCB23K1/008B23K1/19B23K1/20B23K1/203
Inventor 穆建中牛文斗马正军王世健
Owner XI AN JIAOTONG UNIV
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