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AZO/Si heterojunction solar battery and manufacturing method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as complex cell process, increased equipment demand, and cost reduction, and achieve the effects of enhancing collection capacity, reducing recombination centers, and improving conversion efficiency

Active Publication Date: 2014-07-30
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above method effectively reduces interface defects, it increases the process, especially the passivation layer adopts different preparation processes, which makes the battery process complicated and equipment requirements increase, which is not conducive to reducing costs

Method used

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  • AZO/Si heterojunction solar battery and manufacturing method thereof

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Experimental program
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Embodiment 1

[0042] The structure of the AZO / Si heterojunction solar cell of the present embodiment is as follows figure 1 As shown, from top to bottom, it includes: metal gate electrode 1, window layer 2, passivation layer 3, crystal silicon layer 4 and metal back electrode 5,

[0043] Wherein, the window layer 2 is a low hydrogen-doped HAZO thin film with a thickness of 60nm.

[0044] The passivation layer 3 is a highly hydrogen-doped HAZO thin film with a thickness of 2nm.

[0045] The crystalline silicon layer 4 is p-type single crystal silicon.

[0046] The AZO / Si heterojunction solar cell of this embodiment is prepared by the following method:

[0047] (1) On the back of the crystalline silicon layer (one side can be selected as the back), a layer of Al with a thickness of 1 μm is plated by screen printing, and annealed in a rapid annealing furnace at 600 ° C for 1 min to achieve ohmic contact between the metal Al and the crystalline silicon layer.

[0048] (2) With the crystallin...

Embodiment 2

[0054] The structure of the AZO / Si heterojunction solar cell in this embodiment is as follows figure 1 As shown, it includes from top to bottom: metal gate electrode 1 , window layer 2 , passivation layer 3 , crystal silicon layer 4 and metal back electrode 5 .

[0055] Wherein, the window layer 2 is a low hydrogen-doped HAZO thin film with a thickness of 500nm.

[0056] The passivation layer 3 is a highly hydrogen-doped HAZO thin film with a thickness of 20nm.

[0057] The crystalline silicon layer 4 is n-type single crystal silicon.

[0058] The AZO / Si heterojunction solar cell of this embodiment is prepared by the following method:

[0059] (1) Evaporate 20nm-thick Ni and 500nm-thick Au on the back of the crystalline silicon layer, and anneal in a rapid annealing furnace at 600°C for 5min to achieve ohmic contact between the back electrode metal and the crystalline silicon.

[0060] (2) With the crystalline silicon layer as the substrate, a highly hydrogen-doped HAZO fil...

Embodiment 3

[0066] The structure of the AZO / Si heterojunction solar cell of the present embodiment is as follows figure 1 As shown, it includes from top to bottom: metal gate electrode 1 , window layer 2 , passivation layer 3 , crystal silicon layer 4 and metal back electrode 5 .

[0067] Wherein, the window layer 2 is an AZO thin film with a thickness of 300nm.

[0068] The passivation layer 3 is a highly hydrogen-doped HAZO film with a thickness of 10 nm.

[0069] The crystalline silicon layer 4 is p-type polysilicon.

[0070] The AZO / Si heterojunction solar cell of this embodiment is prepared by the following method:

[0071] (1) A layer of Al with a thickness of 2 μm was plated on one side of the crystalline silicon layer by screen printing, and annealed in a rapid annealing furnace at 600 ° C for 1 min to achieve ohmic contact between the metal Al and the crystalline silicon layer.

[0072] (2) Using the crystalline silicon layer as the substrate, prepare a highly hydrogen-doped H...

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Abstract

The invention discloses an AZO / Si heterojunction solar battery and a manufacturing method of the AZO / Si heterojunction solar battery. The AZO / Si heterojunction solar battery structurally and sequentially comprises a metal gate electrode, a window layer, a passivation layer, a crystalline silicon layer and a metal back electrode from top to bottom, wherein an HAZO film mixed with high hydrogen serves as the passivation layer, the number of the effective recombination centers on the interface is effectively reduced, so that a leakage current is reduced, an open-circuit voltage of the solar battery is increased, and therefore conversion efficiency of the solar battery is improved. The AZO / Si heterojunction solar battery is characterized in that AZO is directly sputtered to the surface of Si in a deposited mode to form a heterojunction, and by regulating and controlling the ratio of hydrogen in the sputtering atmosphere, the defect of the interface is simply and effectively passivated, the transfer ability of carriers is improved, and therefore the open-circuit voltage, the short-circuit current density and transfer efficiency of the battery are improved. In addition, the manufacturing technology is simple, the passivation layer and the window layer are continuously deposited in the same equipment, target materials do not need to be replaced, no equipment procedure is added, and the AZO / Si heterojunction solar battery and the manufacturing method are suitable for large-area industrial production.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an AZO / Si heterojunction solar cell and a preparation method thereof. Background technique [0002] TCO (transparent conductive oxide) / Si heterojunction solar cells have the advantages of excellent blue light response, simple structure and process, and low thermal cost. In 1993, H. Kobayashi et al. (Journal of Applied Physics, 1993, 74: 4756-4761) in Japan prepared ITO (indium tin oxide) / Si heterojunction solar cells by spray pyrolysis, and their conversion efficiency has reached 15%, demonstrating the good potential of this type of battery. However, indium is a rare metal with few reserves on the earth. The raw material is expensive and has certain toxicity. Compared with this, aluminum-doped ZnO (Aluminum-doped ZnO, AZO) material has excellent photoelectric properties, rich sources of raw materials, and low price, so it has become the best choice to replace ITO materials....

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 宋伟杰蒋迁王维燕张贤鹏黄金华许炜曾俞衡
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI