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Preparation method of liquid oxidation film

A technology of oxide film and liquid, which is applied in the field of preparation of liquid oxide film, and can solve the problems such as the increase of preparation cost

Inactive Publication Date: 2014-08-06
WUHU ZHEXIN NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the preparation of oxide films such as IGZO (indium gallium zinc oxide) usually uses pulsed laser deposition (PLD) method, sputtering method, chemical vapor deposition (CVD) method, etc., and a large number of vacuum equipment are used in these methods. greatly increased cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: IGZO sol preparation 1

[0025] Using 20 ml of deionized water containing ethylene glycol methyl ether at a molar concentration of 0.7 as the dispersion medium, add zinc acetate dihydrate, gallium nitrate hydrate and indium nitrate hydrate to form a dispersion system with a molar concentration of each compound of 0.7 , and then add acetic acid to keep the pH value at 3.8-4.2, then stir on a hot plate at 60 degrees Celsius for one hour, and age for 24 hours to form IGZO sol.

Embodiment 2

[0026] Embodiment 2: IGZO sol preparation 2

[0027] With 40 milliliters of deionized water containing methanol at a molar concentration of 0.7 as the dispersion medium, add a mixture of zinc nitrate hexahydrate, gallium nitrate hydrate and indium nitrate hydrate to form a dispersion system in which the molar concentration of each compound is 0.7, and then add Acetic acid keeps the pH value at 3.8-4.2, and then after stirring for one hour on a hot plate at 60 degrees Celsius, IGZO sol is formed after aging for 24 hours.

Embodiment 3

[0028] Embodiment 3: IZO sol preparation

[0029] With 40 milliliters of acetonitrile with a molar concentration of 0.6 as the dispersion medium, add zinc chloride and indium chloride to form a dispersion system with a molar concentration of 0.6 for each compound, then add acetic acid to keep the pH value at 3.8-4.2, and then in 60 After stirring for one hour on a hot plate at 100°C, a stable sol was formed after twenty-four hours of aging; zinc chloride and indium chloride are susceptible to moisture, and this process may require moisture control in a humidity-free chamber, so far IZO Sol formation.

[0030] Embodiment 3: SZO sol preparation

[0031] With the molar concentration of 40 milliliters being 0.5 acetonitrile as dispersion medium, add zinc chloride and tin chloride, form the dispersion system that each compound molar concentration is all 0.5, add acetic acid again and make its pH value remain on 3.8-4.2, then in After stirring for one hour on a hot plate at 60 deg...

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PUM

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Abstract

The invention discloses a preparation method of a liquid oxidation film. According to the method, batch production of the liquid oxidation film can be realized with a sol-gel method. The method comprises specific steps as follows: a zinc compound and other compounds are weighed, corresponding dispersion media are added, the mixture is stirred and aged, and a stable disperse system is formed, wherein the mole ratio of the zinc compound to the other compounds is 1: (0.1-2), and other compounds are selected from at least one of an indium compound, a gallium compound, a tin compound and a thallium compound. According to a conventional method, vacuum equipment is used, so that the preparation cost is greatly increased; and the price of the oxidation film can be reduced if the preparation cost is reduced.

Description

technical field [0001] The invention relates to an oxide film, in particular to a method for preparing a liquid oxide film capable of mass production by using a sol-gel method. Background technique [0002] Zinc oxide is a direct transition semiconductor with a band gap of 3.3-3.6eV and an exciton binding energy of 60meV at room temperature, and is widely used as an optical element. Oxide thin films have also been effectively used in the fields of display and semiconductor device manufacturing. [0003] Electrically speaking, zinc oxide is an n-type crystal, and oxygen vacancies are easily generated during the preparation process, which reduces its conductivity. If the n-type conductivity of zinc oxide is to be improved, the current method is to dope it with group III elements or group VII elements to increase its electron concentration, so as to obtain a better n-type semiconductor. Representative dopants are compounds of gallium, aluminum, indium, etc. These compounds, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23
Inventor 赵夫涛王伟高博姜银珠汪明
Owner WUHU ZHEXIN NEW ENERGY