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A kind of texturing method of transparent conductive oxide film

An oxide film, transparent and conductive technology, applied in the field of solar cells, can solve the problems of poor controllability and repeatability, impurity pollution, large difference in texture structure of TCO film, etc., to avoid poor controllability and strong reduction. The effect of anti-light trapping and improving photoelectric conversion performance

Active Publication Date: 2016-03-09
ENN SOLAR ENERGY
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Problems solved by technology

However, due to the poor controllability and repeatability of texturing TCO films by wet etching, that is to say, the texturing structure of TCO films after different batches of the same process is quite different, and the wet etching method is also difficult to achieve. It is easy to introduce impurity pollution during the etching process, which affects the photoelectric conversion efficiency of solar cells

Method used

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  • A kind of texturing method of transparent conductive oxide film
  • A kind of texturing method of transparent conductive oxide film
  • A kind of texturing method of transparent conductive oxide film

Examples

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example 1

[0064] A silicon heterojunction solar cell, such as figure 2 As shown, it includes a crystalline silicon substrate 100, a first intrinsic amorphous silicon layer 110, an N-type amorphous silicon layer 120, and a back electrode 130 located on the backlight side of the crystalline silicon substrate 100 in sequence, and a crystalline silicon substrate 100 located in sequence The second intrinsic amorphous silicon layer 140, the P-type amorphous silicon layer 150, the first transparent conductive oxide film 160 and the gate line electrode 170 on the light incident side; wherein, the incident light of the first transparent conductive oxide film 160 The side has a textured structure, and the back electrode 130 is composed of a second transparent conductive oxide film 131 and a metal electrode 132 . In specific implementation, the preparation method of the above-mentioned silicon heterojunction solar cell specifically includes the following steps:

[0065] (1) cleaning the crystall...

example 2

[0086] A silicon thin film solar cell, such as image 3 As shown, it includes a transparent substrate 200, a first transparent conductive oxide film 210, an amorphous silicon cell structure 220, a microcrystalline silicon cell structure 230, and a back electrode 240 located on one side of the transparent substrate 200 in sequence; wherein, the first The side of the transparent conductive oxide film 210 facing away from the transparent substrate 200 has a textured structure, and the amorphous silicon cell structure 220 includes a stacked transition layer 221, a P-type hydrogenated amorphous silicon layer (Pa-Si:H) 222, Intrinsic hydrogenated amorphous silicon layer (Ia-Si:H) 223 and N-type hydrogenated microcrystalline silicon layer (Nμc-Si:H) 224, the microcrystalline silicon cell structure 230 includes a stacked P-type hydrogenated microcrystalline silicon layer (Pμc-Si:H) 231, intrinsic hydrogenated microcrystalline silicon layer (Iμc-Si:H) 232 and N-type hydrogenated amorph...

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Abstract

The invention discloses a texturing method of a transparent conductive oxide thin film. Due to the fact that a plasma-immersion ion implantation technology is used for conducting reactive ion etching processing on the transparent conductive oxide thin film, the transparent conductive oxide thin film with a texture surface can be obtained, so that the transparent conductive oxide thin film with the texture structure is applied to a front electrode of a solar cell, and a high antireflection or light trapping effect can be achieved. According to the texturing method, the influence of impurities led by wet etching on the performance of the solar cell can be avoided, the plasma-immersion ion implantation technology is used for making the texture structure on the transparent conductive oxide thin film, the texture structure can further be flexibly adjusted, and therefore the photovoltaic conversion performance of the solar cell can be improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a texturing method for a transparent conductive oxide film. Background technique [0002] With the increasing energy crisis and environmental pollution, people pay more attention to the research and application development of new energy. Among them, solar photovoltaic power generation technology has become a research hotspot in the field of new energy due to its cleanliness, safety and renewability. [0003] Current solar cells generally include a front electrode and a back electrode composed of a transparent conductive oxide (TCO) thin film, and a PN junction between the front electrode and the back electrode. When sunlight irradiates the PN junction, the built-in electric field separates the photogenerated hole-electron pairs generated by the light, thereby forming non-equilibrium carriers and generating current. In the preparation process of solar cells, in order to mini...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/02366Y02E10/50Y02P70/50
Inventor 谷士斌杨荣何延如赵冠超温转萍李立伟孟原郭铁
Owner ENN SOLAR ENERGY
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